DE3516995C2 - - Google Patents

Info

Publication number
DE3516995C2
DE3516995C2 DE3516995A DE3516995A DE3516995C2 DE 3516995 C2 DE3516995 C2 DE 3516995C2 DE 3516995 A DE3516995 A DE 3516995A DE 3516995 A DE3516995 A DE 3516995A DE 3516995 C2 DE3516995 C2 DE 3516995C2
Authority
DE
Germany
Prior art keywords
conductive layer
semiconductor device
wire
aluminum
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3516995A
Other languages
German (de)
English (en)
Other versions
DE3516995A1 (de
Inventor
Shinobu Itami Hyogo Jp Takahama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3516995A1 publication Critical patent/DE3516995A1/de
Application granted granted Critical
Publication of DE3516995C2 publication Critical patent/DE3516995C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10287—Metal wires as connectors or conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Inverter Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
DE19853516995 1984-05-11 1985-05-10 Halbleitereinrichtung Granted DE3516995A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59095113A JPS60239051A (ja) 1984-05-11 1984-05-11 半導体装置

Publications (2)

Publication Number Publication Date
DE3516995A1 DE3516995A1 (de) 1985-11-14
DE3516995C2 true DE3516995C2 (enExample) 1993-06-24

Family

ID=14128788

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853516995 Granted DE3516995A1 (de) 1984-05-11 1985-05-10 Halbleitereinrichtung

Country Status (4)

Country Link
US (1) US5038194A (enExample)
JP (1) JPS60239051A (enExample)
KR (1) KR900000206B1 (enExample)
DE (1) DE3516995A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19509441A1 (de) * 1994-03-16 1995-09-28 Hitachi Ltd Hybrid-integrierte Leistungsschaltungsvorrichtung
DE19612514A1 (de) * 1995-11-24 1997-05-28 Asea Brown Boveri Leistungshalbleitermodul mit einer Mehrzahl von Submodulen

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3604313A1 (de) * 1986-02-12 1987-08-13 Bbc Brown Boveri & Cie Leistungshalbleitermodul
US4907068A (en) * 1987-01-21 1990-03-06 Siemens Aktiengesellschaft Semiconductor arrangement having at least one semiconductor body
JPH0740790B2 (ja) * 1987-02-23 1995-05-01 株式会社東芝 大電力パワ−モジユ−ル
IT1202657B (it) * 1987-03-09 1989-02-09 Sgs Microelettronica Spa Procedimento di fabbricazione di un dispositivo modulare di potenza a semiconduttore e dispositivo con esso ottenento
DE3717489A1 (de) * 1987-05-23 1988-12-01 Asea Brown Boveri Leistungshalbleitermodul und verfahren zur herstellung des moduls
JPH03106029A (ja) * 1989-09-20 1991-05-02 Fujitsu Ltd ウエハ・スケール・ｉｃ
US5731970A (en) * 1989-12-22 1998-03-24 Hitachi, Ltd. Power conversion device and semiconductor module suitable for use in the device
US5038197A (en) * 1990-06-26 1991-08-06 Harris Semiconductor Patents, Inc. Hermetically sealed die package with floating source
NL9101453A (nl) * 1990-09-10 1992-04-01 Barmag Barmer Maschf Frequentie-omvormer.
DE4105155C2 (de) * 1991-02-20 1994-07-07 Export Contor Ausenhandelsgese Stromrichterschaltungsanordnung
DE4130160A1 (de) * 1991-09-11 1993-03-25 Export Contor Aussenhandel Elektronische schaltung
EP1492220A3 (en) 1991-09-20 2005-03-09 Hitachi, Ltd. IGBT-module
JP2882143B2 (ja) * 1991-12-10 1999-04-12 富士電機株式会社 半導体装置の内部配線構造
JP2973799B2 (ja) * 1993-04-23 1999-11-08 富士電機株式会社 パワートランジスタモジュール
US5473193A (en) * 1994-01-06 1995-12-05 Harris Corporation Package for parallel subelement semiconductor devices
DE19522172C1 (de) * 1995-06-19 1996-11-21 Siemens Ag Leistungs-Halbleitermodul mit Anschlußstiften
JP3298520B2 (ja) * 1998-10-01 2002-07-02 富士電機株式会社 電力変換装置
FR2807209A1 (fr) * 2000-04-04 2001-10-05 De Gail Marc Lamort Composant pour la commutation de courants electriques forts
US6302709B1 (en) 2000-06-05 2001-10-16 Power-One, Inc. Multiple function high current interconnect with integrated bus bar
US20020071293A1 (en) * 2000-07-13 2002-06-13 Eden Richard C. Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods a of forming power transistor
DE10212721A1 (de) * 2001-03-24 2002-09-26 Marquardt Gmbh Ansteuereinrichtung für einen Elektromotor
US20060006526A1 (en) * 2004-07-06 2006-01-12 Coronati John M Thermal interposer for cooled electrical packages
US20070165376A1 (en) * 2006-01-17 2007-07-19 Norbert Bones Three phase inverter power stage and assembly
DE102006004322A1 (de) * 2006-01-31 2007-08-16 Häusermann GmbH Leiterplatte mit zusätzlichen funktionalen Elementen sowie Herstellverfahren und Anwendung
JP7036221B2 (ja) * 2018-09-14 2022-03-15 富士電機株式会社 半導体装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8203300U1 (de) * 1982-06-24 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit Keramiksubstrat
JPS492455U (enExample) * 1972-04-10 1974-01-10
DE7512573U (de) * 1975-04-19 1975-09-04 Semikron Gesellschaft Fuer Gleichri Halbleitergleichrichteranordnung
US4021839A (en) * 1975-10-16 1977-05-03 Rca Corporation Diode package
DE2642721A1 (de) * 1976-09-23 1978-04-06 Bosch Gmbh Robert Halbleiterbauelement
DE2819327C2 (de) * 1978-05-03 1984-10-31 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbaueinheit
JPS5536915A (en) * 1978-09-04 1980-03-14 Hitachi Ltd Electronic circuit and its manufacturing
DE3106193A1 (de) * 1981-02-19 1982-09-09 Siemens AG, 1000 Berlin und 8000 München Systemtraeger fuer mit kunststoff umhuellte elektrische bauelemente
US4518982A (en) * 1981-02-27 1985-05-21 Motorola, Inc. High current package with multi-level leads
FR2503932A1 (fr) * 1981-04-08 1982-10-15 Thomson Csf Boitiers a cosses plates pour composants semi-conducteurs de moyenne puissance et procede de fabrication
DE3274926D1 (en) * 1981-05-12 1987-02-05 Lucas Ind Plc A multi-phase bridge arrangement
JPS6038867B2 (ja) * 1981-06-05 1985-09-03 株式会社日立製作所 絶縁型半導体装置
US4514587A (en) * 1981-12-23 1985-04-30 Unitrode Corporation High power semiconductor package
DE3241508A1 (de) * 1982-11-10 1984-05-10 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungstransistor-modul
US4538170A (en) * 1983-01-03 1985-08-27 General Electric Company Power chip package
JPS59181627A (ja) * 1983-03-31 1984-10-16 Toshiba Corp 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19509441A1 (de) * 1994-03-16 1995-09-28 Hitachi Ltd Hybrid-integrierte Leistungsschaltungsvorrichtung
DE19509441C2 (de) * 1994-03-16 1999-12-23 Hitachi Ltd Integrierte Hybrid-Leistungsschaltungsvorrichtung
DE19612514A1 (de) * 1995-11-24 1997-05-28 Asea Brown Boveri Leistungshalbleitermodul mit einer Mehrzahl von Submodulen

Also Published As

Publication number Publication date
US5038194A (en) 1991-08-06
KR900000206B1 (ko) 1990-01-23
KR850008557A (ko) 1985-12-18
JPS60239051A (ja) 1985-11-27
DE3516995A1 (de) 1985-11-14

Similar Documents

Publication Publication Date Title
DE3516995C2 (enExample)
DE2629203C2 (enExample)
DE10149580B4 (de) Halbleitervorrichtung
DE3685612T2 (de) Mehrschicht-halbleiteranordnung.
DE102011083223B4 (de) Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte
DE2542518C3 (enExample)
DE69535235T2 (de) Thermoelektrische Vorrichtung
DE1933547B2 (de) Traeger fuer halbleiterbauelemente
DE2352357A1 (de) Halbleitergehaeuse
DE1764951B1 (de) Mehrschichtige metallisierung fuer halbleiteranschluesse
DE1811389C3 (de) Flächenhaftes Halbleiterbauelement
DE4325668A1 (de) Mehrebenen-Verdrahtungssubstrat und dieses verwendende Halbleiteranordnung
DE69500388T2 (de) Filmschaltungs-Metallsystem zur Verwendung in IC-Bauteilen mit Kontakthöckern
DE112008003425T5 (de) Halbleiterbauelement und Verfahren zum Herstellen desselben
DE2217538B2 (de) Verfahren zur Herstellung von Zwischenverbindungen in einer Halbleiteranordnung
DE19951752A1 (de) Elektrische Vorrichtung und Verfahren zu ihrer Herstellung
EP0750352A2 (de) Halbleiter-Bauelement-Konfiguration
DE102020204406B4 (de) Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
DE2806099A1 (de) Halbleiter-baugruppe
EP0841668B1 (de) Elektrischer Widerstand und Verfahren zu seiner Herstellung
DE69728648T2 (de) Halbleitervorrichtung mit hochfrequenz-bipolar-transistor auf einem isolierenden substrat
DE102019124593A1 (de) Kühlsystem
DE3884019T2 (de) Verfahren zum Herstellen einer Modul-Halbleiter-Leistungsanordnung und hergestellte Anordnung.
DE102016223651A1 (de) Halbleitermodul und halbleitervorrichtung
DE68919263T2 (de) Halbleiteranordnung mit Zuleitungen.

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee