DE3508469A1 - Verfahren zum strukturieren von auf einem transparenten substrat aufgebrachten schichtfolgen - Google Patents
Verfahren zum strukturieren von auf einem transparenten substrat aufgebrachten schichtfolgenInfo
- Publication number
- DE3508469A1 DE3508469A1 DE19853508469 DE3508469A DE3508469A1 DE 3508469 A1 DE3508469 A1 DE 3508469A1 DE 19853508469 DE19853508469 DE 19853508469 DE 3508469 A DE3508469 A DE 3508469A DE 3508469 A1 DE3508469 A1 DE 3508469A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- laser light
- irradiation
- oxide
- transparent substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000000059 patterning Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 20
- 230000001678 irradiating effect Effects 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
- H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19853508469 DE3508469A1 (de) | 1985-03-09 | 1985-03-09 | Verfahren zum strukturieren von auf einem transparenten substrat aufgebrachten schichtfolgen |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19853508469 DE3508469A1 (de) | 1985-03-09 | 1985-03-09 | Verfahren zum strukturieren von auf einem transparenten substrat aufgebrachten schichtfolgen |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3508469A1 true DE3508469A1 (de) | 1986-09-11 |
DE3508469C2 DE3508469C2 (enrdf_load_stackoverflow) | 1987-08-13 |
Family
ID=6264730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19853508469 Granted DE3508469A1 (de) | 1985-03-09 | 1985-03-09 | Verfahren zum strukturieren von auf einem transparenten substrat aufgebrachten schichtfolgen |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3508469A1 (enrdf_load_stackoverflow) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3816660C1 (en) * | 1988-05-17 | 1989-09-07 | Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De | Sensor, especially photodetector arrangement |
US5173446A (en) * | 1988-06-28 | 1992-12-22 | Ricoh Company, Ltd. | Semiconductor substrate manufacturing by recrystallization using a cooling medium |
US5310446A (en) * | 1990-01-10 | 1994-05-10 | Ricoh Company, Ltd. | Method for producing semiconductor film |
US5459346A (en) * | 1988-06-28 | 1995-10-17 | Ricoh Co., Ltd. | Semiconductor substrate with electrical contact in groove |
WO1997027727A1 (de) * | 1996-01-26 | 1997-07-31 | Emi-Tec Elektronische Materialien Gmbh | Verfahren zur herstellung einer leiterstruktur |
WO1998014986A1 (de) * | 1996-10-01 | 1998-04-09 | Siemens Aktiengesellschaft | Verfahren zum trennen zweier materialschichten voneinander und nach diesem verfahren hergestellte elektronische bauelemente |
WO2005093470A1 (de) * | 2004-03-27 | 2005-10-06 | Laser-Laboratorium Göttingen e.V. | Verfahren zur herstellung eines optischen bauteils mittels oberlächenstrukturierender laserbearbeitung |
US7202141B2 (en) | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
US7691659B2 (en) | 2000-04-26 | 2010-04-06 | Osram Gmbh | Radiation-emitting semiconductor element and method for producing the same |
GB2472613A (en) * | 2009-08-11 | 2011-02-16 | M Solv Ltd | Capacitive touch panels |
US7939844B2 (en) | 2000-05-26 | 2011-05-10 | Osram Gmbh | Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3727825A1 (de) * | 1987-08-20 | 1989-03-02 | Siemens Ag | Serienverschaltetes duennschichtsolarmodul aus kristallinem silizium |
DE3727826A1 (de) * | 1987-08-20 | 1989-03-02 | Siemens Ag | Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium |
DE3921038C2 (de) * | 1988-06-28 | 1998-12-10 | Ricoh Kk | Verfahren zur Herstellung eines Halbleitersubstrats bzw. Festkörperaufbaus |
DE4022745A1 (de) * | 1990-07-18 | 1992-01-23 | Hans Lang Gmbh & Co Kg Ing | Verfahren zum anbringen von konfigurationen, wie schriften, bildern o. dgl., auf der rueckseite eines spiegels |
DE4324318C1 (de) * | 1993-07-20 | 1995-01-12 | Siemens Ag | Verfahren zur Serienverschaltung einer integrierten Dünnfilmsolarzellenanordnung |
DE19619317C2 (de) * | 1996-05-14 | 2000-10-05 | Voith Hydro Gmbh | Laufrad für eine Freistrahltubine |
DE10051465A1 (de) | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
-
1985
- 1985-03-09 DE DE19853508469 patent/DE3508469A1/de active Granted
Non-Patent Citations (1)
Title |
---|
NAKANO, S. et al.: New Manufacturing Processes for a-Sisolar Cell Modules, In: 5. E.C. Photovoltaic Solar Energy Conference, Kavouri (Athen), Oktober 1983, S. 712-716 * |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3816660C1 (en) * | 1988-05-17 | 1989-09-07 | Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De | Sensor, especially photodetector arrangement |
US5173446A (en) * | 1988-06-28 | 1992-12-22 | Ricoh Company, Ltd. | Semiconductor substrate manufacturing by recrystallization using a cooling medium |
US5459346A (en) * | 1988-06-28 | 1995-10-17 | Ricoh Co., Ltd. | Semiconductor substrate with electrical contact in groove |
US5565697A (en) * | 1988-06-28 | 1996-10-15 | Ricoh Company, Ltd. | Semiconductor structure having island forming grooves |
US5310446A (en) * | 1990-01-10 | 1994-05-10 | Ricoh Company, Ltd. | Method for producing semiconductor film |
WO1997027727A1 (de) * | 1996-01-26 | 1997-07-31 | Emi-Tec Elektronische Materialien Gmbh | Verfahren zur herstellung einer leiterstruktur |
US6974758B2 (en) | 1996-10-01 | 2005-12-13 | Siemens Aktiengesellschaft | Method of producing a light-emitting diode |
US7341925B2 (en) | 1996-10-01 | 2008-03-11 | Osram Gmbh | Method for transferring a semiconductor body from a growth substrate to a support material |
US6740604B2 (en) | 1996-10-01 | 2004-05-25 | Siemens Aktiengesellschaft | Method of separating two layers of material from one another |
US7713840B2 (en) | 1996-10-01 | 2010-05-11 | Osram Gmbh | Electronic components produced by a method of separating two layers of material from one another |
WO1998014986A1 (de) * | 1996-10-01 | 1998-04-09 | Siemens Aktiengesellschaft | Verfahren zum trennen zweier materialschichten voneinander und nach diesem verfahren hergestellte elektronische bauelemente |
US6559075B1 (en) | 1996-10-01 | 2003-05-06 | Siemens Aktiengesellschaft | Method of separating two layers of material from one another and electronic components produced using this process |
US7691659B2 (en) | 2000-04-26 | 2010-04-06 | Osram Gmbh | Radiation-emitting semiconductor element and method for producing the same |
US7939844B2 (en) | 2000-05-26 | 2011-05-10 | Osram Gmbh | Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same |
EP2003474A3 (de) * | 2004-03-27 | 2008-12-24 | Laser-Laboratorium Göttingen E.V. | Verfahren zur Herstellung eines optischen Bauteils mittels oberflächenstrukturiender Laserbearbeitung |
WO2005093470A1 (de) * | 2004-03-27 | 2005-10-06 | Laser-Laboratorium Göttingen e.V. | Verfahren zur herstellung eines optischen bauteils mittels oberlächenstrukturierender laserbearbeitung |
US7241667B2 (en) | 2004-03-29 | 2007-07-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
US7202141B2 (en) | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
GB2472613A (en) * | 2009-08-11 | 2011-02-16 | M Solv Ltd | Capacitive touch panels |
GB2472613B (en) * | 2009-08-11 | 2015-06-03 | M Solv Ltd | Capacitive touch panels |
Also Published As
Publication number | Publication date |
---|---|
DE3508469C2 (enrdf_load_stackoverflow) | 1987-08-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |