DE3481391D1 - Schaltung zur informationsspeicherung unter verwendung von aufgeschmolzenen und unaufgeschmolzenen schmelzverbindungen. - Google Patents

Schaltung zur informationsspeicherung unter verwendung von aufgeschmolzenen und unaufgeschmolzenen schmelzverbindungen.

Info

Publication number
DE3481391D1
DE3481391D1 DE8484302451T DE3481391T DE3481391D1 DE 3481391 D1 DE3481391 D1 DE 3481391D1 DE 8484302451 T DE8484302451 T DE 8484302451T DE 3481391 T DE3481391 T DE 3481391T DE 3481391 D1 DE3481391 D1 DE 3481391D1
Authority
DE
Germany
Prior art keywords
circuit
molten
information storage
fuses
melt compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484302451T
Other languages
English (en)
Inventor
Yoshihiro Takemae
Norihisa Tsuge
Junji Ogawa
Yasuhiro Fujii
Tomio Nakano
Takeo Esuperansa Dai Tatematsu
Takashi Horii
Masao Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3481391D1 publication Critical patent/DE3481391D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
DE8484302451T 1983-11-10 1984-04-10 Schaltung zur informationsspeicherung unter verwendung von aufgeschmolzenen und unaufgeschmolzenen schmelzverbindungen. Expired - Lifetime DE3481391D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58209860A JPS60103594A (ja) 1983-11-10 1983-11-10 情報記憶回路

Publications (1)

Publication Number Publication Date
DE3481391D1 true DE3481391D1 (de) 1990-03-29

Family

ID=16579821

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484302451T Expired - Lifetime DE3481391D1 (de) 1983-11-10 1984-04-10 Schaltung zur informationsspeicherung unter verwendung von aufgeschmolzenen und unaufgeschmolzenen schmelzverbindungen.

Country Status (6)

Country Link
US (1) US4592025A (de)
EP (1) EP0151849B1 (de)
JP (1) JPS60103594A (de)
KR (1) KR910005596B1 (de)
CA (1) CA1216901A (de)
DE (1) DE3481391D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201598A (ja) * 1984-03-23 1985-10-12 Fujitsu Ltd 半導体集積回路
US4686384A (en) * 1985-08-09 1987-08-11 Harris Corporation Fuse programmable DC level generator
JPS62291799A (ja) * 1986-06-11 1987-12-18 Fujitsu Ltd 半導体記憶装置
US4689494A (en) * 1986-09-18 1987-08-25 Advanced Micro Devices, Inc. Redundancy enable/disable circuit
US4996670A (en) * 1989-09-28 1991-02-26 International Business Machines Corporation Zero standby power, radiation hardened, memory redundancy circuit
FR2660795B1 (fr) * 1990-04-10 1994-01-07 Sgs Thomson Microelectronics Sa Circuit de detection de fusible.
FR2674060B1 (fr) * 1991-03-14 1993-05-28 Gemplus Card Int Procede de programmation pour memoire integree, notamment pour carte a memoire.
US5384746A (en) * 1994-01-28 1995-01-24 Texas Instruments Incorporated Circuit and method for storing and retrieving data
US5949127A (en) * 1997-06-06 1999-09-07 Integrated Device Technology, Inc. Electrically programmable interlevel fusible link for integrated circuits
FR2779264B1 (fr) * 1998-05-27 2001-11-02 Sgs Thomson Microelectronics Dispositif a programmation unique de fiabilite elevee
US6285619B1 (en) * 1999-11-18 2001-09-04 Infineon Technologies North America Corp. Memory cell
US6829737B1 (en) 2000-08-30 2004-12-07 Micron Technology, Inc. Method and system for storing device test information on a semiconductor device using on-device logic for determination of test results
US6943575B2 (en) * 2002-07-29 2005-09-13 Micron Technology, Inc. Method, circuit and system for determining burn-in reliability from wafer level burn-in
WO2005015567A1 (de) * 2003-07-29 2005-02-17 Infineon Technologies Ag Nichtflüchtiges speicherelement mit erhöhter datensicherheit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4250570B1 (en) * 1976-07-15 1996-01-02 Intel Corp Redundant memory circuit
DE2836420A1 (de) * 1978-08-19 1980-03-06 Tekade Felten & Guilleaume Verfahren zur erkennung und zur verhinderung der weitergabe von nachtraeglich veraenderten speicherinhalten
US4432070A (en) * 1981-09-30 1984-02-14 Monolithic Memories, Incorporated High speed PROM device
JPS58177599A (ja) * 1982-04-12 1983-10-18 Toshiba Corp 半導体集積回路装置

Also Published As

Publication number Publication date
CA1216901A (en) 1987-01-20
JPS60103594A (ja) 1985-06-07
EP0151849A3 (en) 1987-06-16
EP0151849B1 (de) 1990-02-21
US4592025A (en) 1986-05-27
KR910005596B1 (ko) 1991-07-31
JPS6322399B2 (de) 1988-05-11
EP0151849A2 (de) 1985-08-21
KR850003616A (ko) 1985-06-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition