FR2779264B1 - Dispositif a programmation unique de fiabilite elevee - Google Patents

Dispositif a programmation unique de fiabilite elevee

Info

Publication number
FR2779264B1
FR2779264B1 FR9806860A FR9806860A FR2779264B1 FR 2779264 B1 FR2779264 B1 FR 2779264B1 FR 9806860 A FR9806860 A FR 9806860A FR 9806860 A FR9806860 A FR 9806860A FR 2779264 B1 FR2779264 B1 FR 2779264B1
Authority
FR
France
Prior art keywords
high reliability
programming device
single programming
reliability
programming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9806860A
Other languages
English (en)
Other versions
FR2779264A1 (fr
Inventor
Patrick Bernard
Jacques Quervel
Christophe Magnier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Priority to FR9806860A priority Critical patent/FR2779264B1/fr
Priority to US09/318,589 priority patent/US6507053B1/en
Publication of FR2779264A1 publication Critical patent/FR2779264A1/fr
Application granted granted Critical
Publication of FR2779264B1 publication Critical patent/FR2779264B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
FR9806860A 1998-05-27 1998-05-27 Dispositif a programmation unique de fiabilite elevee Expired - Fee Related FR2779264B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9806860A FR2779264B1 (fr) 1998-05-27 1998-05-27 Dispositif a programmation unique de fiabilite elevee
US09/318,589 US6507053B1 (en) 1998-05-27 1999-05-25 Highly reliable OTP device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9806860A FR2779264B1 (fr) 1998-05-27 1998-05-27 Dispositif a programmation unique de fiabilite elevee

Publications (2)

Publication Number Publication Date
FR2779264A1 FR2779264A1 (fr) 1999-12-03
FR2779264B1 true FR2779264B1 (fr) 2001-11-02

Family

ID=9526902

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9806860A Expired - Fee Related FR2779264B1 (fr) 1998-05-27 1998-05-27 Dispositif a programmation unique de fiabilite elevee

Country Status (2)

Country Link
US (1) US6507053B1 (fr)
FR (1) FR2779264B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4364515B2 (ja) * 2003-01-09 2009-11-18 Ｏｋｉセミコンダクタ株式会社 ヒューズレイアウト，及びトリミング方法
WO2005015567A1 (fr) * 2003-07-29 2005-02-17 Infineon Technologies Ag Element de memoire non volatile a securisation de donnees elevee
US7180102B2 (en) * 2003-09-30 2007-02-20 Agere Systems Inc. Method and apparatus for using cobalt silicided polycrystalline silicon for a one time programmable non-volatile semiconductor memory
US8050005B2 (en) * 2006-12-20 2011-11-01 Telefonaktiebolaget Lm Ericsson Automatic function with selectable fuse rating for single fuses and fuse panels
US20100016034A1 (en) * 2008-06-10 2010-01-21 Telefonaktiebolaget L M Ericsson (Publ) Power supply method and apparatus for radio access network nodes/sites
KR101537317B1 (ko) * 2009-01-14 2015-07-16 삼성전자주식회사 멀티레벨 원-타임 프로그래머블 메모리 장치
US8530283B2 (en) 2011-09-14 2013-09-10 Semiconductor Components Industries, Llc Process for forming an electronic device including a nonvolatile memory structure having an antifuse component
US8741697B2 (en) 2011-09-14 2014-06-03 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same
US8724364B2 (en) 2011-09-14 2014-05-13 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103594A (ja) * 1983-11-10 1985-06-07 Fujitsu Ltd 情報記憶回路
US4969124A (en) * 1989-03-07 1990-11-06 National Semiconductor Corporation Method for vertical fuse testing
KR0122103B1 (ko) * 1994-05-07 1997-11-26 김광호 반도체 메모리 장치의 퓨즈 소자
US5656967A (en) * 1995-08-07 1997-08-12 Micron Technology, Inc. Two-stage fusible electrostatic discharge protection circuit
US5925920A (en) * 1996-06-12 1999-07-20 Quicklogic Corporation Techniques and circuits for high yield improvements in programmable devices using redundant routing resources

Also Published As

Publication number Publication date
FR2779264A1 (fr) 1999-12-03
US6507053B1 (en) 2003-01-14

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Legal Events

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CD Change of name or company name
ST Notification of lapse

Effective date: 20080131