DE3477624D1 - Low temperature tunneling transistor - Google Patents

Low temperature tunneling transistor

Info

Publication number
DE3477624D1
DE3477624D1 DE8484115428T DE3477624T DE3477624D1 DE 3477624 D1 DE3477624 D1 DE 3477624D1 DE 8484115428 T DE8484115428 T DE 8484115428T DE 3477624 T DE3477624 T DE 3477624T DE 3477624 D1 DE3477624 D1 DE 3477624D1
Authority
DE
Germany
Prior art keywords
low temperature
tunneling transistor
temperature tunneling
transistor
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484115428T
Other languages
English (en)
Inventor
Werner Baechtold
Alexis Baratoff
Pierre Leopold Gueret
Christoph Stefan Harder
Hans Peter Wolf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3477624D1 publication Critical patent/DE3477624D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8484115428T 1984-12-18 1984-12-18 Low temperature tunneling transistor Expired DE3477624D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP84115428A EP0185104B1 (de) 1984-12-18 1984-12-18 Tunnel-Transistor für tiefe Temperaturen

Publications (1)

Publication Number Publication Date
DE3477624D1 true DE3477624D1 (en) 1989-05-11

Family

ID=8192352

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484115428T Expired DE3477624D1 (en) 1984-12-18 1984-12-18 Low temperature tunneling transistor

Country Status (4)

Country Link
US (1) US4675711A (de)
EP (1) EP0185104B1 (de)
JP (1) JP2571208B2 (de)
DE (1) DE3477624D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272358A (en) * 1986-08-13 1993-12-21 Hitachi, Ltd. Superconducting device
US5834793A (en) * 1985-12-27 1998-11-10 Kabushiki Kaisha Toshiba Semiconductor devices
FR2611300B1 (fr) * 1987-02-20 1989-04-21 Labo Electronique Physique Circuit de stockage d'informations a faible temps d'acces
JPH07109906B2 (ja) * 1988-03-03 1995-11-22 松下電器産業株式会社 超伝導トランジスタ回路
EP0366861A1 (de) * 1988-10-20 1990-05-09 International Business Machines Corporation Ballistischer Halbleitertransistor
FR2638569B1 (fr) * 1988-10-25 1992-11-20 Seiko Epson Corp Transistor josephson du type a effet de champ et procede de fabrication d'une jonction josephson
US5086329A (en) * 1990-07-27 1992-02-04 The United States Of America As Represented By The Secretary Of The Navy Planar gallium arsenide NPNP microwave switch
FR2666175B1 (fr) * 1990-08-21 1992-10-16 Thomson Csf Transistor a effet de champ a supraconducteur.
FR2674067B1 (fr) * 1991-03-15 1993-05-28 Thomson Csf Dispositif semiconducteur a effet josephson.
JPH10281897A (ja) * 1997-04-08 1998-10-23 Mitsubishi Electric Corp 半導体圧力検出装置
US6198113B1 (en) 1999-04-22 2001-03-06 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
US7615402B1 (en) 2000-07-07 2009-11-10 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
JP2004071927A (ja) * 2002-08-08 2004-03-04 Renesas Technology Corp 半導体装置
US7026642B2 (en) * 2003-08-27 2006-04-11 Micron Technology, Inc. Vertical tunneling transistor
WO2006077585A2 (en) * 2005-01-18 2006-07-27 Shye Shapira Apparatus and method for control of tunneling in a small-scale electronic structure
US7465976B2 (en) * 2005-05-13 2008-12-16 Intel Corporation Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
US7528065B2 (en) * 2006-01-17 2009-05-05 International Business Machines Corporation Structure and method for MOSFET gate electrode landing pad
US20090034355A1 (en) * 2007-07-30 2009-02-05 Qimonda Ag Integrated circuit including memory cells with tunnel fet as selection transistor
US8026509B2 (en) * 2008-12-30 2011-09-27 Intel Corporation Tunnel field effect transistor and method of manufacturing same
US8405121B2 (en) 2009-02-12 2013-03-26 Infineon Technologies Ag Semiconductor devices
US8178400B2 (en) * 2009-09-28 2012-05-15 International Business Machines Corporation Replacement spacer for tunnel FETs
US8258031B2 (en) 2010-06-15 2012-09-04 International Business Machines Corporation Fabrication of a vertical heterojunction tunnel-FET

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2607940A1 (de) * 1976-02-27 1977-09-08 Max Planck Gesellschaft Mehrschichtiges halbleiterbauelement
JPS57164573A (en) * 1982-02-26 1982-10-09 Hitachi Ltd Semiconductor device
JPS5961967A (ja) * 1982-09-30 1984-04-09 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 半導体装置
US4583105A (en) * 1982-12-30 1986-04-15 International Business Machines Corporation Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage
FR2545988B1 (fr) * 1983-05-10 1986-02-28 Thomson Csf Transistor a effet de champ, fonctionnant en mode de desertion profonde

Also Published As

Publication number Publication date
US4675711A (en) 1987-06-23
EP0185104A1 (de) 1986-06-25
EP0185104B1 (de) 1989-04-05
JP2571208B2 (ja) 1997-01-16
JPS61144883A (ja) 1986-07-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee