DE3476129D1 - Alkaline solution for developing positive photoresists - Google Patents

Alkaline solution for developing positive photoresists

Info

Publication number
DE3476129D1
DE3476129D1 DE8484302254T DE3476129T DE3476129D1 DE 3476129 D1 DE3476129 D1 DE 3476129D1 DE 8484302254 T DE8484302254 T DE 8484302254T DE 3476129 T DE3476129 T DE 3476129T DE 3476129 D1 DE3476129 D1 DE 3476129D1
Authority
DE
Germany
Prior art keywords
alkaline solution
positive photoresists
developing positive
developing
photoresists
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484302254T
Other languages
German (de)
English (en)
Inventor
Kenji Niwa
Ichiro Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=13082895&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3476129(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Application granted granted Critical
Publication of DE3476129D1 publication Critical patent/DE3476129D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE8484302254T 1983-04-01 1984-04-02 Alkaline solution for developing positive photoresists Expired DE3476129D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58058386A JPS59182444A (ja) 1983-04-01 1983-04-01 ポジ型フオトレジストの改良現像液

Publications (1)

Publication Number Publication Date
DE3476129D1 true DE3476129D1 (en) 1989-02-16

Family

ID=13082895

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484302254T Expired DE3476129D1 (en) 1983-04-01 1984-04-02 Alkaline solution for developing positive photoresists

Country Status (6)

Country Link
US (1) US4741989A (cg-RX-API-DMAC10.html)
EP (1) EP0124297B2 (cg-RX-API-DMAC10.html)
JP (1) JPS59182444A (cg-RX-API-DMAC10.html)
CA (1) CA1254429A (cg-RX-API-DMAC10.html)
DE (1) DE3476129D1 (cg-RX-API-DMAC10.html)
MX (1) MX158996A (cg-RX-API-DMAC10.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0177905B1 (de) * 1984-10-09 1990-12-05 Hoechst Japan Kabushiki Kaisha Verfahren zum Entwickeln und zum Entschichten von Photoresistschichten mit quaternären Ammomiumverbindungen
JPH063549B2 (ja) * 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
JPS61167948A (ja) * 1985-01-21 1986-07-29 Mitsubishi Chem Ind Ltd ポジ型感光性組成物用現像液
US4686002A (en) * 1986-07-18 1987-08-11 Syntex (U.S.A.) Inc. Stabilized choline base solutions
EP0286272B1 (en) * 1987-04-06 1994-01-12 Hoechst Celanese Corporation High contrast, positive photoresist developer containing alkanolamine
US5094934A (en) * 1987-04-06 1992-03-10 Morton International, Inc. Method of developing a high contrast, positive photoresist using a developer containing alkanolamine
US4828965A (en) * 1988-01-06 1989-05-09 Olin Hunt Specialty Products Inc. Aqueous developing solution and its use in developing positive-working photoresist composition
DE3827567A1 (de) * 1988-08-13 1990-02-22 Basf Ag Waessrige entwicklerloesung fuer positiv arbeitende photoresists
US4997748A (en) * 1988-08-26 1991-03-05 Tokyo Ohka Kogyo Co., Ltd. Developer solution for positive-working resist composition
US5175078A (en) * 1988-10-20 1992-12-29 Mitsubishi Gas Chemical Company, Inc. Positive type photoresist developer
DE68923844T2 (de) * 1988-10-20 1995-12-21 Mitsubishi Gas Chemical Co Entwickler für Positiv-Photolacke.
US5252436A (en) * 1989-12-15 1993-10-12 Basf Aktiengesellschaft Process for developing a positive-working photoresist containing poly(p-hydroxystyrene) and sulfonium salt with an aqueous developer containing basic organic compounds
US5164286A (en) * 1991-02-01 1992-11-17 Ocg Microelectronic Materials, Inc. Photoresist developer containing fluorinated amphoteric surfactant
US5538832A (en) * 1993-12-16 1996-07-23 Mitsubishi Gas Chemical Company, Inc. Developing solution for producing printed circuit boards and a process for producing printed circuit boards wherein the developing solution comprises a quaternary ammonium hydroxide and a quaternary ammonium carbonate
US6007963A (en) * 1995-09-21 1999-12-28 Sandia Corporation Method for extreme ultraviolet lithography
US6127101A (en) * 1999-10-12 2000-10-03 Air Products And Chemicals, Inc. Alkylated aminoalkylpiperazine surfactants and their use in photoresist developers
US6268115B1 (en) 2000-01-06 2001-07-31 Air Products And Chemicals, Inc. Use of alkylated polyamines in photoresist developers
JP5982442B2 (ja) * 2012-10-31 2016-08-31 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液、並びに、これを使用したパターン形成方法、及び、電子デバイスの製造方法
JP5764589B2 (ja) * 2012-10-31 2015-08-19 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の収容容器、並びに、これらを使用したパターン形成方法及び電子デバイスの製造方法
KR101920783B1 (ko) * 2018-03-14 2018-11-21 동우 화인켐 주식회사 감광성 수지 조성물 및 이를 사용한 패턴 형성 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5024641B2 (cg-RX-API-DMAC10.html) * 1972-10-17 1975-08-18
US4191573A (en) * 1974-10-09 1980-03-04 Fuji Photo Film Co., Ltd. Photosensitive positive image forming process with two photo-sensitive layers
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
US4141733A (en) * 1977-10-25 1979-02-27 Eastman Kodak Company Development of light-sensitive quinone diazide compositions
JPS56122130A (en) * 1980-02-28 1981-09-25 Sharp Corp Method for forming pattern of thin film transistor
DE3039110A1 (de) * 1980-10-16 1982-05-13 Siemens AG, 1000 Berlin und 8000 München Verfahren fuer die spannungsfreie entwicklung von bestrahlten polymethylmetacrylatschichten
DE3100077A1 (de) * 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
JPS57114141A (en) * 1981-01-06 1982-07-15 San Ei Chem Ind Ltd Increasing method for developing power of developer for positive type photosensitive resin
DE3268203D1 (en) * 1981-04-10 1986-02-13 Shipley Co Metal ion-free photoresist developer composition
JPS5857128A (ja) * 1981-09-30 1983-04-05 Toshiba Corp ポジ型フオトレジストの現像液
JPS5882243A (ja) * 1981-11-11 1983-05-17 Kanto Kagaku Kk ポジ型フオトレジスト用現像液組成物
JPS58134631A (ja) * 1982-01-08 1983-08-10 Konishiroku Photo Ind Co Ltd 感光性組成物
US4423138A (en) * 1982-01-21 1983-12-27 Eastman Kodak Company Resist developer with ammonium or phosphonium compound and method of use to develop o-quinone diazide and novolac resist
JPS5962850A (ja) * 1982-06-17 1984-04-10 シツプレ−・カンパニ−・インコ−ポレ−テツド フオトレジストの現像組成物および現像法
JPS59219743A (ja) * 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト現像液
JPS59220732A (ja) * 1983-05-31 1984-12-12 Toshiba Corp フオトレジスト現像液
US4464461A (en) * 1983-07-22 1984-08-07 Eastman Kodak Company Development of light-sensitive quinone diazide compositions

Also Published As

Publication number Publication date
EP0124297A3 (en) 1986-07-09
EP0124297A2 (en) 1984-11-07
US4741989A (en) 1988-05-03
EP0124297B2 (en) 1992-10-14
MX158996A (es) 1989-04-05
EP0124297B1 (en) 1989-01-11
CA1254429A (en) 1989-05-23
JPH0326826B2 (cg-RX-API-DMAC10.html) 1991-04-12
JPS59182444A (ja) 1984-10-17

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings
8339 Ceased/non-payment of the annual fee