MX158996A - Agente revelador para material fotorresistente positivo que contiene modificadores de revelado - Google Patents
Agente revelador para material fotorresistente positivo que contiene modificadores de reveladoInfo
- Publication number
- MX158996A MX158996A MX200851A MX20085184A MX158996A MX 158996 A MX158996 A MX 158996A MX 200851 A MX200851 A MX 200851A MX 20085184 A MX20085184 A MX 20085184A MX 158996 A MX158996 A MX 158996A
- Authority
- MX
- Mexico
- Prior art keywords
- material containing
- resistant material
- developing agent
- positive photo
- development modifiers
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58058386A JPS59182444A (ja) | 1983-04-01 | 1983-04-01 | ポジ型フオトレジストの改良現像液 |
Publications (1)
Publication Number | Publication Date |
---|---|
MX158996A true MX158996A (es) | 1989-04-05 |
Family
ID=13082895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX200851A MX158996A (es) | 1983-04-01 | 1984-03-30 | Agente revelador para material fotorresistente positivo que contiene modificadores de revelado |
Country Status (6)
Country | Link |
---|---|
US (1) | US4741989A (es) |
EP (1) | EP0124297B2 (es) |
JP (1) | JPS59182444A (es) |
CA (1) | CA1254429A (es) |
DE (1) | DE3476129D1 (es) |
MX (1) | MX158996A (es) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0177905B1 (de) * | 1984-10-09 | 1990-12-05 | Hoechst Japan Kabushiki Kaisha | Verfahren zum Entwickeln und zum Entschichten von Photoresistschichten mit quaternären Ammomiumverbindungen |
JPH063549B2 (ja) * | 1984-12-25 | 1994-01-12 | 株式会社東芝 | ポジ型フォトレジスト現像液組成物 |
JPS61167948A (ja) * | 1985-01-21 | 1986-07-29 | Mitsubishi Chem Ind Ltd | ポジ型感光性組成物用現像液 |
US4686002A (en) * | 1986-07-18 | 1987-08-11 | Syntex (U.S.A.) Inc. | Stabilized choline base solutions |
EP0286272B1 (en) * | 1987-04-06 | 1994-01-12 | Hoechst Celanese Corporation | High contrast, positive photoresist developer containing alkanolamine |
US5094934A (en) * | 1987-04-06 | 1992-03-10 | Morton International, Inc. | Method of developing a high contrast, positive photoresist using a developer containing alkanolamine |
US4828965A (en) * | 1988-01-06 | 1989-05-09 | Olin Hunt Specialty Products Inc. | Aqueous developing solution and its use in developing positive-working photoresist composition |
DE3827567A1 (de) * | 1988-08-13 | 1990-02-22 | Basf Ag | Waessrige entwicklerloesung fuer positiv arbeitende photoresists |
US4997748A (en) * | 1988-08-26 | 1991-03-05 | Tokyo Ohka Kogyo Co., Ltd. | Developer solution for positive-working resist composition |
US5175078A (en) * | 1988-10-20 | 1992-12-29 | Mitsubishi Gas Chemical Company, Inc. | Positive type photoresist developer |
EP0364895B1 (en) * | 1988-10-20 | 1995-08-16 | Mitsubishi Gas Chemical Company, Inc. | Positive type photoresist developer |
US5252436A (en) * | 1989-12-15 | 1993-10-12 | Basf Aktiengesellschaft | Process for developing a positive-working photoresist containing poly(p-hydroxystyrene) and sulfonium salt with an aqueous developer containing basic organic compounds |
US5164286A (en) * | 1991-02-01 | 1992-11-17 | Ocg Microelectronic Materials, Inc. | Photoresist developer containing fluorinated amphoteric surfactant |
US5538832A (en) * | 1993-12-16 | 1996-07-23 | Mitsubishi Gas Chemical Company, Inc. | Developing solution for producing printed circuit boards and a process for producing printed circuit boards wherein the developing solution comprises a quaternary ammonium hydroxide and a quaternary ammonium carbonate |
US6007963A (en) * | 1995-09-21 | 1999-12-28 | Sandia Corporation | Method for extreme ultraviolet lithography |
US6127101A (en) * | 1999-10-12 | 2000-10-03 | Air Products And Chemicals, Inc. | Alkylated aminoalkylpiperazine surfactants and their use in photoresist developers |
US6268115B1 (en) | 2000-01-06 | 2001-07-31 | Air Products And Chemicals, Inc. | Use of alkylated polyamines in photoresist developers |
JP5982442B2 (ja) * | 2012-10-31 | 2016-08-31 | 富士フイルム株式会社 | 化学増幅型レジスト膜のパターニング用有機系処理液、並びに、これを使用したパターン形成方法、及び、電子デバイスの製造方法 |
JP5764589B2 (ja) * | 2012-10-31 | 2015-08-19 | 富士フイルム株式会社 | 化学増幅型レジスト膜のパターニング用有機系処理液の収容容器、並びに、これらを使用したパターン形成方法及び電子デバイスの製造方法 |
KR101920783B1 (ko) * | 2018-03-14 | 2018-11-21 | 동우 화인켐 주식회사 | 감광성 수지 조성물 및 이를 사용한 패턴 형성 방법 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5024641B2 (es) * | 1972-10-17 | 1975-08-18 | ||
US4191573A (en) * | 1974-10-09 | 1980-03-04 | Fuji Photo Film Co., Ltd. | Photosensitive positive image forming process with two photo-sensitive layers |
GB1573206A (en) * | 1975-11-26 | 1980-08-20 | Tokyo Shibaura Electric Co | Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices |
US4141733A (en) * | 1977-10-25 | 1979-02-27 | Eastman Kodak Company | Development of light-sensitive quinone diazide compositions |
JPS56122130A (en) * | 1980-02-28 | 1981-09-25 | Sharp Corp | Method for forming pattern of thin film transistor |
DE3039110A1 (de) * | 1980-10-16 | 1982-05-13 | Siemens AG, 1000 Berlin und 8000 München | Verfahren fuer die spannungsfreie entwicklung von bestrahlten polymethylmetacrylatschichten |
DE3100077A1 (de) * | 1981-01-03 | 1982-08-05 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters |
JPS57114141A (en) * | 1981-01-06 | 1982-07-15 | San Ei Chem Ind Ltd | Increasing method for developing power of developer for positive type photosensitive resin |
EP0062733B1 (en) * | 1981-04-10 | 1986-01-02 | Shipley Company Inc. | Metal ion-free photoresist developer composition |
JPS5857128A (ja) * | 1981-09-30 | 1983-04-05 | Toshiba Corp | ポジ型フオトレジストの現像液 |
JPS5882243A (ja) * | 1981-11-11 | 1983-05-17 | Kanto Kagaku Kk | ポジ型フオトレジスト用現像液組成物 |
JPS58134631A (ja) * | 1982-01-08 | 1983-08-10 | Konishiroku Photo Ind Co Ltd | 感光性組成物 |
US4423138A (en) * | 1982-01-21 | 1983-12-27 | Eastman Kodak Company | Resist developer with ammonium or phosphonium compound and method of use to develop o-quinone diazide and novolac resist |
JPS5962850A (ja) * | 1982-06-17 | 1984-04-10 | シツプレ−・カンパニ−・インコ−ポレ−テツド | フオトレジストの現像組成物および現像法 |
JPS59219743A (ja) * | 1983-05-28 | 1984-12-11 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト現像液 |
JPS59220732A (ja) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | フオトレジスト現像液 |
US4464461A (en) * | 1983-07-22 | 1984-08-07 | Eastman Kodak Company | Development of light-sensitive quinone diazide compositions |
-
1983
- 1983-04-01 JP JP58058386A patent/JPS59182444A/ja active Granted
-
1984
- 1984-03-30 MX MX200851A patent/MX158996A/es unknown
- 1984-03-30 CA CA000450923A patent/CA1254429A/en not_active Expired
- 1984-04-02 EP EP84302254A patent/EP0124297B2/en not_active Expired
- 1984-04-02 DE DE8484302254T patent/DE3476129D1/de not_active Expired
-
1986
- 1986-05-28 US US06/869,858 patent/US4741989A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0124297A2 (en) | 1984-11-07 |
DE3476129D1 (en) | 1989-02-16 |
CA1254429A (en) | 1989-05-23 |
US4741989A (en) | 1988-05-03 |
JPS59182444A (ja) | 1984-10-17 |
EP0124297A3 (en) | 1986-07-09 |
EP0124297B1 (en) | 1989-01-11 |
EP0124297B2 (en) | 1992-10-14 |
JPH0326826B2 (es) | 1991-04-12 |
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