DE3468446D1 - Porous semiconductor dopant carriers - Google Patents
Porous semiconductor dopant carriersInfo
- Publication number
- DE3468446D1 DE3468446D1 DE8484303901T DE3468446T DE3468446D1 DE 3468446 D1 DE3468446 D1 DE 3468446D1 DE 8484303901 T DE8484303901 T DE 8484303901T DE 3468446 T DE3468446 T DE 3468446T DE 3468446 D1 DE3468446 D1 DE 3468446D1
- Authority
- DE
- Germany
- Prior art keywords
- dopant
- porous semiconductor
- carriers
- semiconductor dopant
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002019 doping agent Substances 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000969 carrier Substances 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12153—Interconnected void structure [e.g., permeable, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Products (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
- Carbon And Carbon Compounds (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/502,287 US4525429A (en) | 1983-06-08 | 1983-06-08 | Porous semiconductor dopant carriers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3468446D1 true DE3468446D1 (de) | 1988-02-11 |
Family
ID=23997152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8484303901T Expired DE3468446D1 (de) | 1983-06-08 | 1984-06-08 | Porous semiconductor dopant carriers |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4525429A (de) |
| EP (1) | EP0151851B1 (de) |
| JP (1) | JPS6024010A (de) |
| KR (1) | KR850000777A (de) |
| AT (1) | ATE31747T1 (de) |
| CA (1) | CA1217784A (de) |
| DE (1) | DE3468446D1 (de) |
| IE (1) | IE55723B1 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4596716A (en) * | 1983-06-08 | 1986-06-24 | Kennecott Corporation | Porous silicon nitride semiconductor dopant carriers |
| DE3430912A1 (de) * | 1984-08-22 | 1986-02-27 | Hutschenreuther Ag, 8672 Selb | Abgaskatalysator und verfahren zu seiner herstellung |
| US4892786A (en) * | 1986-09-16 | 1990-01-09 | Lanxide Technology Company, Lp | Ceramic articles with a polymer component and methods of making same |
| US5110675A (en) * | 1986-09-16 | 1992-05-05 | Lanxide Technology Company, Lp | Ceramic articles with a polymer component and methods of making same |
| US4749615A (en) * | 1986-10-31 | 1988-06-07 | Stemcor Corporation | Semiconductor dopant source |
| JPH0628250B2 (ja) * | 1988-07-18 | 1994-04-13 | 古河機械金属株式会社 | 砒素拡散剤とその成形物の製法およびこれを使用した半導体装置の製造方法 |
| GB8817886D0 (en) * | 1988-07-27 | 1988-09-01 | British Telecomm | Avalanche photodiode structure |
| US5298767A (en) * | 1992-10-06 | 1994-03-29 | Kulite Semiconductor Products, Inc. | Porous silicon carbide (SiC) semiconductor device |
| KR100358129B1 (ko) * | 1995-02-27 | 2003-01-24 | 주식회사 하이닉스반도체 | 산화물이도핑된폴리실리콘막을사용한반도체소자제조방법 |
| US5904892A (en) * | 1996-04-01 | 1999-05-18 | Saint-Gobain/Norton Industrial Ceramics Corp. | Tape cast silicon carbide dummy wafer |
| US5770324A (en) * | 1997-03-03 | 1998-06-23 | Saint-Gobain Industrial Ceramics, Inc. | Method of using a hot pressed silicon carbide dummy wafer |
| JP4442892B2 (ja) * | 2004-03-29 | 2010-03-31 | コバレントマテリアル株式会社 | シリコン単結晶引上げ用砒素ドーパントの製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS454134Y1 (de) * | 1968-06-03 | 1970-02-25 | ||
| US3658606A (en) * | 1969-04-01 | 1972-04-25 | Ibm | Diffusion source and method of producing same |
| US3640806A (en) * | 1970-01-05 | 1972-02-08 | Nippon Telegraph & Telephone | Semiconductor device and method of producing the same |
| JPS4995567A (de) * | 1973-01-12 | 1974-09-10 | ||
| US3951587A (en) * | 1974-12-06 | 1976-04-20 | Norton Company | Silicon carbide diffusion furnace components |
| US4028149A (en) * | 1976-06-30 | 1977-06-07 | Ibm Corporation | Process for forming monocrystalline silicon carbide on silicon substrates |
| JPS554712A (en) * | 1978-06-22 | 1980-01-14 | Tdk Corp | Base for magnetic recording tape |
| US4292264A (en) * | 1978-07-18 | 1981-09-29 | Motorola, Inc. | Method for producing polycrystalline ribbon |
| US4277320A (en) * | 1979-10-01 | 1981-07-07 | Rockwell International Corporation | Process for direct thermal nitridation of silicon semiconductor devices |
| US4381233A (en) * | 1980-05-19 | 1983-04-26 | Asahi Kasei Kogyo Kabushiki Kaisha | Photoelectrolyzer |
| JPS5746897A (en) * | 1981-07-22 | 1982-03-17 | Sharp Corp | Diluting liquid for ink to be jetted |
| IE56118B1 (en) * | 1983-06-08 | 1991-04-24 | Kennecott Corp | Foam semiconductor dopant carriers |
| US4596716A (en) * | 1983-06-08 | 1986-06-24 | Kennecott Corporation | Porous silicon nitride semiconductor dopant carriers |
| CA1221388A (en) * | 1983-06-08 | 1987-05-05 | Martin R. Kasprzyk | Composite refractory foams |
-
1983
- 1983-06-08 US US06/502,287 patent/US4525429A/en not_active Expired - Lifetime
-
1984
- 1984-06-06 IE IE1412/84A patent/IE55723B1/xx unknown
- 1984-06-07 CA CA000456081A patent/CA1217784A/en not_active Expired
- 1984-06-08 KR KR1019840003217A patent/KR850000777A/ko not_active Application Discontinuation
- 1984-06-08 EP EP84303901A patent/EP0151851B1/de not_active Expired
- 1984-06-08 DE DE8484303901T patent/DE3468446D1/de not_active Expired
- 1984-06-08 AT AT84303901T patent/ATE31747T1/de not_active IP Right Cessation
- 1984-06-08 JP JP59118032A patent/JPS6024010A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| ATE31747T1 (de) | 1988-01-15 |
| CA1217784A (en) | 1987-02-10 |
| IE841412L (en) | 1984-12-08 |
| EP0151851A3 (en) | 1985-09-25 |
| EP0151851B1 (de) | 1988-01-07 |
| JPS6024010A (ja) | 1985-02-06 |
| KR850000777A (ko) | 1985-03-09 |
| EP0151851A2 (de) | 1985-08-21 |
| IE55723B1 (en) | 1991-01-02 |
| US4525429A (en) | 1985-06-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |