JPS6124831B2 - - Google Patents

Info

Publication number
JPS6124831B2
JPS6124831B2 JP52078155A JP7815577A JPS6124831B2 JP S6124831 B2 JPS6124831 B2 JP S6124831B2 JP 52078155 A JP52078155 A JP 52078155A JP 7815577 A JP7815577 A JP 7815577A JP S6124831 B2 JPS6124831 B2 JP S6124831B2
Authority
JP
Japan
Prior art keywords
film
receiving element
light
cdte
znte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52078155A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5412580A (en
Inventor
Nobuo Nakayama
Hitoshi Matsumoto
Yoshio Enoki
Seiji Ikegami
Toshio Yamashita
Manabu Yoshida
Hiroshi Uda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7815577A priority Critical patent/JPS5412580A/ja
Publication of JPS5412580A publication Critical patent/JPS5412580A/ja
Publication of JPS6124831B2 publication Critical patent/JPS6124831B2/ja
Granted legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP7815577A 1977-06-29 1977-06-29 Photo detector Granted JPS5412580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7815577A JPS5412580A (en) 1977-06-29 1977-06-29 Photo detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7815577A JPS5412580A (en) 1977-06-29 1977-06-29 Photo detector

Publications (2)

Publication Number Publication Date
JPS5412580A JPS5412580A (en) 1979-01-30
JPS6124831B2 true JPS6124831B2 (de) 1986-06-12

Family

ID=13654015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7815577A Granted JPS5412580A (en) 1977-06-29 1977-06-29 Photo detector

Country Status (1)

Country Link
JP (1) JPS5412580A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142683A (en) * 1980-04-09 1981-11-07 Ricoh Co Ltd Photoelectric converter
JPS5759510Y2 (de) * 1980-04-23 1982-12-18
JPS56155577A (en) * 1980-05-06 1981-12-01 Ricoh Co Ltd Photoelectric transducer
JPS5715716U (de) * 1980-07-01 1982-01-27
JPS5933282Y2 (ja) * 1980-08-15 1984-09-17 松下電器産業株式会社 調圧弁
JPS5754377A (en) * 1980-09-18 1982-03-31 Canon Inc Photoelectric converting element
JPS60180161A (ja) * 1984-02-27 1985-09-13 Matsushita Electric Ind Co Ltd 光センサ−アレイ
JPH0590623A (ja) * 1991-09-28 1993-04-09 Nissha Printing Co Ltd 太陽電池用転写材

Also Published As

Publication number Publication date
JPS5412580A (en) 1979-01-30

Similar Documents

Publication Publication Date Title
US3508126A (en) Semiconductor photodiode with p-n junction spaced from heterojunction
Tani et al. Phototransport effects in polyacetylene,(CH) x
Ennen et al. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
US4132999A (en) Semiconductor devices
US2765385A (en) Sintered photoconducting layers
US2820841A (en) Photovoltaic cells and methods of fabricating same
JPS6252478B2 (de)
GB1529139A (en) Photovoltaic cell and a method of manufacturing such a cell
GB1576495A (en) Photovoltaic cells
US3502884A (en) Method and apparatus for detecting light by capacitance change using semiconductor material with depletion layer
US4320248A (en) Semiconductor photoelectric conversion device
US4079405A (en) Semiconductor photodetector
JPS6124831B2 (de)
Vohl et al. GaAs thin-film solar cells
JP6657427B2 (ja) Agドープした光起電力デバイスおよび製造方法
CA1080837A (en) Optically transmissive screening electrode
US3755002A (en) Method of making photoconductive film
US6362483B1 (en) Visible-blind UV detectors
US4005468A (en) Semiconductor photoelectric device with plural tin oxide heterojunctions and common electrical connection
US3952323A (en) Semiconductor photoelectric device
US3922579A (en) Photoconductive target
US3092725A (en) Blocking-layer photo-electric cell
Sarmah et al. Effect of substrate temperature on photoconductivity in CdTe thin films
US3598760A (en) Cdse or cds-se photoconductors doped with a ib element and either bromine or iodine
JPS59117276A (ja) 太陽電池の製造方法