DE3446399C2 - Monolithisch integrierbare Schaltung mit einer Darlington-Endstufe zur Umschaltsteuerung von induktiven Lasten - Google Patents
Monolithisch integrierbare Schaltung mit einer Darlington-Endstufe zur Umschaltsteuerung von induktiven LastenInfo
- Publication number
- DE3446399C2 DE3446399C2 DE3446399A DE3446399A DE3446399C2 DE 3446399 C2 DE3446399 C2 DE 3446399C2 DE 3446399 A DE3446399 A DE 3446399A DE 3446399 A DE3446399 A DE 3446399A DE 3446399 C2 DE3446399 C2 DE 3446399C2
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- connection
- circuit
- control
- switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001939 inductive effect Effects 0.000 title claims description 15
- 230000007704 transition Effects 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/615—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in a Darlington configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04126—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/04213—Modifications for accelerating switching by feedback from the output circuit to the control circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/64—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
Landscapes
- Electronic Switches (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT24252/83A IT1219780B (it) | 1983-12-20 | 1983-12-20 | Circuito di comando in commutazione di carichi induttivi,integrabile monoliticamente,comprendente uno stadio finale di tipo darlington |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3446399A1 DE3446399A1 (de) | 1985-07-04 |
| DE3446399C2 true DE3446399C2 (de) | 1994-09-29 |
Family
ID=11212761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3446399A Expired - Fee Related DE3446399C2 (de) | 1983-12-20 | 1984-12-19 | Monolithisch integrierbare Schaltung mit einer Darlington-Endstufe zur Umschaltsteuerung von induktiven Lasten |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4636713A (enrdf_load_stackoverflow) |
| JP (1) | JPS60157326A (enrdf_load_stackoverflow) |
| DE (1) | DE3446399C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2556904B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2152314B (enrdf_load_stackoverflow) |
| IT (1) | IT1219780B (enrdf_load_stackoverflow) |
| SE (1) | SE454637B (enrdf_load_stackoverflow) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3712784A1 (de) * | 1987-04-15 | 1988-11-03 | Philips Patentverwaltung | Schaltungsanordnung zur begrenzung der einschaltstromspitzen bei einem schalttransistor |
| US4947055A (en) * | 1989-01-13 | 1990-08-07 | Sundstrand Corporation | Base drive circuit for Darlington-connected transistors |
| US4881408A (en) * | 1989-02-16 | 1989-11-21 | Sundstrand Data Control, Inc. | Low profile accelerometer |
| IT1228842B (it) * | 1989-02-21 | 1991-07-05 | Sgs Thomson Microelectronics | Circuito per la regolazione della corrente di base di un dispositivo di potenza a semiconduttore. |
| US5030844A (en) * | 1990-06-25 | 1991-07-09 | Motorola, Inc. | DC power switch with inrush prevention |
| US5189600A (en) * | 1991-12-19 | 1993-02-23 | North American Philips Corporation | Combined power supply for main and stand-by power |
| US5410190A (en) * | 1992-12-17 | 1995-04-25 | Sgs-Thomson Microelectronics, Inc. | Circuit for shortening the turn-off time of a power transistor |
| SE502435C2 (sv) * | 1994-02-09 | 1995-10-16 | Ericsson Telefon Ab L M | Förfarande och anordning i en halvledarkrets |
| EP1261129A1 (en) * | 2001-05-25 | 2002-11-27 | Agilent Technologies, Inc. (a Delaware corporation) | Amplifier apparatus for an output stage of a laser driver circuit |
| CN104025455B (zh) * | 2011-11-07 | 2018-07-20 | 西门子公司 | 用于电压控制的半导体开关的保护装置 |
| EP3627164B1 (fr) * | 2018-09-18 | 2023-08-09 | Soreel Societe de Realisation d'Equipements Electriques | Systeme comprenant un dispositif de commande d'un disjoncteur ultra-rapide d'une installation electrique et procede de test d'un tel systeme |
| FR3086062A1 (fr) * | 2018-09-18 | 2020-03-20 | Soreel Societe De Realisation D'equipements Electriques | Dispositif de commande d’un organe de coupure d’une installation electrique et procede de test d'un tel dispositif |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4071877A (en) * | 1975-10-31 | 1978-01-31 | Ncr Corporation | Drive circuit |
| NL7711083A (nl) * | 1977-10-10 | 1979-04-12 | Philips Nv | Schakeling voorzien van een hoogspannings- vermogenstransistor. |
| DE2811149A1 (de) * | 1978-03-15 | 1979-09-20 | Bosch Gmbh Robert | Elektrischer stromkreis mit einem schalttransistor und mit einem induktiven widerstand, insbesondere mit der primaerwicklung einer zu einer brennkraftmaschine gehoerenden zuendspule |
| JPS5855582B2 (ja) * | 1981-11-13 | 1983-12-10 | 株式会社東芝 | 透視性テ−プカセツト |
| IT1218316B (it) * | 1982-03-17 | 1990-04-12 | Ates Componenti Elettron | Circuito di comando in commutazione di carichi induttivi,integrabile monolicamente,comprendente uno stadio finalein push-pull |
| US4455526A (en) * | 1982-06-29 | 1984-06-19 | The United States Of America As Represented By The Secretary Of The Air Force | FET Switching regulator |
-
1983
- 1983-12-20 IT IT24252/83A patent/IT1219780B/it active
-
1984
- 1984-12-18 SE SE8406441A patent/SE454637B/sv not_active IP Right Cessation
- 1984-12-19 FR FR8419418A patent/FR2556904B1/fr not_active Expired
- 1984-12-19 DE DE3446399A patent/DE3446399C2/de not_active Expired - Fee Related
- 1984-12-20 GB GB08432154A patent/GB2152314B/en not_active Expired
- 1984-12-20 US US06/683,808 patent/US4636713A/en not_active Expired - Lifetime
- 1984-12-20 JP JP59267555A patent/JPS60157326A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60157326A (ja) | 1985-08-17 |
| FR2556904A1 (fr) | 1985-06-21 |
| GB2152314A (en) | 1985-07-31 |
| SE454637B (sv) | 1988-05-16 |
| SE8406441D0 (sv) | 1984-12-18 |
| SE8406441L (sv) | 1985-06-21 |
| IT1219780B (it) | 1990-05-24 |
| FR2556904B1 (fr) | 1987-03-06 |
| GB2152314B (en) | 1987-08-05 |
| US4636713A (en) | 1987-01-13 |
| JPH0369449B2 (enrdf_load_stackoverflow) | 1991-11-01 |
| DE3446399A1 (de) | 1985-07-04 |
| GB8432154D0 (en) | 1985-01-30 |
| IT8324252A0 (it) | 1983-12-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8128 | New person/name/address of the agent |
Representative=s name: KLUNKER, H., DIPL.-ING. DR.RER.NAT. SCHMITT-NILSON |
|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |