DE69428782T2 - Anstiegszeitsteuerung und Optimierung des Leistungsverbrauchs in einer Leistungsstufe - Google Patents

Anstiegszeitsteuerung und Optimierung des Leistungsverbrauchs in einer Leistungsstufe

Info

Publication number
DE69428782T2
DE69428782T2 DE69428782T DE69428782T DE69428782T2 DE 69428782 T2 DE69428782 T2 DE 69428782T2 DE 69428782 T DE69428782 T DE 69428782T DE 69428782 T DE69428782 T DE 69428782T DE 69428782 T2 DE69428782 T2 DE 69428782T2
Authority
DE
Germany
Prior art keywords
optimization
time control
rise time
power consumption
power level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69428782T
Other languages
English (en)
Other versions
DE69428782D1 (de
Inventor
Francesco Pulvirenti
Gregorio Bontempo
Roberto Gariboldi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69428782D1 publication Critical patent/DE69428782D1/de
Publication of DE69428782T2 publication Critical patent/DE69428782T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0023—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier in emitter-coupled or cascode amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
DE69428782T 1994-05-25 1994-05-25 Anstiegszeitsteuerung und Optimierung des Leistungsverbrauchs in einer Leistungsstufe Expired - Fee Related DE69428782T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830249A EP0684699B1 (de) 1994-05-25 1994-05-25 Anstiegszeitsteuerung und Optimierung des Leistungsverbrauchs in einer Leistungsstufe

Publications (2)

Publication Number Publication Date
DE69428782D1 DE69428782D1 (de) 2001-11-29
DE69428782T2 true DE69428782T2 (de) 2002-05-08

Family

ID=8218451

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69428782T Expired - Fee Related DE69428782T2 (de) 1994-05-25 1994-05-25 Anstiegszeitsteuerung und Optimierung des Leistungsverbrauchs in einer Leistungsstufe

Country Status (4)

Country Link
US (1) US5656969A (de)
EP (1) EP0684699B1 (de)
JP (1) JP3703523B2 (de)
DE (1) DE69428782T2 (de)

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JP3227699B2 (ja) * 1998-07-29 2001-11-12 日本電気株式会社 チャージポンプ回路及びそれを備えたｐｌｌ回路
DE19836577C1 (de) * 1998-08-12 2000-04-20 Siemens Ag Leistungsschaltkreis mit verminderter Störstrahlung
US6362665B1 (en) 1999-11-19 2002-03-26 Intersil Americas Inc. Backwards drivable MOS output driver
EP1229653A1 (de) * 2001-02-02 2002-08-07 Semiconductor Ideas to The Market (ItoM) BV Rückkopplung mit Anstiegsgeschwindigkeitsbegrenzer
US6600363B2 (en) 2001-04-05 2003-07-29 Cornell Research Foundation, Inc. Folded floating-gate differential pair amplifier
DE10154642C1 (de) 2001-11-07 2003-07-17 Siemens Ag Auswerteschaltung für einen induktiven Sensor
US6842058B2 (en) * 2002-11-12 2005-01-11 Lsi Logic Corporation Method and apparatus for slew control of an output signal
DE10252827B3 (de) 2002-11-13 2004-08-05 Siemens Ag Schaltungsanordnung zur schnellen Ansteuerung insbesondere induktiver Lasten
US6919651B2 (en) 2002-11-26 2005-07-19 Siemens Aktiengesellschaft Circuit arrangement for high-speed switching of inductive loads
DE102004018823B3 (de) * 2004-04-19 2005-06-30 Infineon Technologies Ag Schaltungsanordnung mit einem Leistungstransistor und einer Ansteuerschaltung für den Leistungstransistor
US7667524B2 (en) * 2004-11-05 2010-02-23 International Rectifier Corporation Driver circuit and method with reduced DI/DT and having delay compensation
US7339433B2 (en) * 2005-03-15 2008-03-04 Apex Microtechnology Corporation Differential amplifier stage
US7479770B2 (en) * 2005-04-28 2009-01-20 Texas Instruments Incorporated System and method for driving a power field-effect transistor (FET)
JP5012414B2 (ja) * 2007-10-26 2012-08-29 株式会社デンソー ドライブ回路
US7688119B2 (en) * 2008-04-01 2010-03-30 Silicon Laboratories, Inc. Power supply with digital control loop
CN101841247B (zh) * 2009-11-20 2013-01-23 Bcd半导体制造有限公司 一种开关电源的基极驱动电路
TWI404341B (zh) * 2009-12-31 2013-08-01 Realtek Semiconductor Corp 記憶控制電壓並鎖定頻率訊號之電路、鎖相迴路裝置與其控制方法
EP2426820B1 (de) * 2010-09-07 2013-09-04 Dialog Semiconductor GmbH Schaltkreis zur Steuerung von HS-NMOS-Netzschaltern mit Begrenzung der Spannungsanstiegsgeschwindigkeit
US9196207B2 (en) 2011-05-03 2015-11-24 Apple Inc. System and method for controlling the slew rate of a signal
TWI447556B (zh) * 2011-06-14 2014-08-01 Novatek Microelectronics Corp 快速反應電流源
EP2978130B1 (de) 2014-07-24 2019-09-11 Renesas Electronics Europe GmbH Schaltung zur Steuerung der Anstiegsrate eines hochseitigen Schaltelements
US10469068B1 (en) 2018-09-26 2019-11-05 Semiconductor Components Industries, Llc Adaptive gate driver
CN111510090B (zh) * 2020-05-19 2023-03-31 成都微光集电科技有限公司 一种高压摆率和宽输出范围的运算放大器
CN113093853B (zh) * 2021-04-15 2022-08-23 东北大学 一种实现低电压启动过程中低输入输出压差的改进ldo电路

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EP0398170A3 (de) * 1989-05-17 1991-04-17 National Semiconductor Corporation Zeitlich begrenzte Anhebung des Ansteuerstroms für einen DMOS-Transistortreiber mit schnellem Einschalten und niedrigem Ruhestrom
US5017816A (en) * 1989-11-08 1991-05-21 National Semiconductor Corp. Adaptive gate discharge circuit for power FETS
US5023474A (en) * 1989-11-08 1991-06-11 National Semiconductor Corp. Adaptive gate charge circuit for power FETs
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US5157351A (en) * 1991-08-28 1992-10-20 Sgs-Thomson Microelectronics, Inc. Insulated gate enhancement mode field effect transistor with slew-rate control on drain output
DE4131783C1 (de) * 1991-09-24 1993-02-04 Siemens Ag, 8000 Muenchen, De
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DE69223775T2 (de) * 1992-06-16 1998-04-30 Sgs Thomson Microelectronics Schaltung zur Steuerung des maximalen Stroms in einen Leistungs-MOS-Transistor mit einer Last, die an Masse geschaltet ist
EP0608667B1 (de) * 1993-01-29 1996-08-21 STMicroelectronics S.r.l. Treiberschaltung für einen Feldeffekttransistor in einer Halbbrückenausgangsstufe
DE69319326T2 (de) * 1993-04-09 1998-10-29 St Microelectronics Srl Steuerung, Verringerung und Angleichen der Verzögerungszeiten in einer Low-Side-Treiberstufe
EP0627818B1 (de) * 1993-05-31 1997-09-10 STMicroelectronics S.r.l. Verringerung der Ausschaltszeit eines Ausgangsleistungstransistors
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JP3979717B2 (ja) * 1997-07-09 2007-09-19 三洋電機株式会社 空気調和装置

Also Published As

Publication number Publication date
US5656969A (en) 1997-08-12
EP0684699A1 (de) 1995-11-29
JPH07326953A (ja) 1995-12-12
JP3703523B2 (ja) 2005-10-05
EP0684699B1 (de) 2001-10-24
DE69428782D1 (de) 2001-11-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee