DE3442645C2 - - Google Patents
Info
- Publication number
- DE3442645C2 DE3442645C2 DE3442645A DE3442645A DE3442645C2 DE 3442645 C2 DE3442645 C2 DE 3442645C2 DE 3442645 A DE3442645 A DE 3442645A DE 3442645 A DE3442645 A DE 3442645A DE 3442645 C2 DE3442645 C2 DE 3442645C2
- Authority
- DE
- Germany
- Prior art keywords
- gas
- thin film
- vacuum chamber
- carrier
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000007789 gas Substances 0.000 claims description 36
- 239000010409 thin film Substances 0.000 claims description 34
- 230000001590 oxidative effect Effects 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 150000002736 metal compounds Chemical class 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 9
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229940087654 iron carbonyl Drugs 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/85—Coating a support with a magnetic layer by vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/22—Heat treatment; Thermal decomposition; Chemical vapour deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21780183A JPS60110112A (ja) | 1983-11-21 | 1983-11-21 | 磁性薄膜 |
| JP22307083A JPS60116118A (ja) | 1983-11-29 | 1983-11-29 | 磁性薄膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3442645A1 DE3442645A1 (de) | 1985-05-30 |
| DE3442645C2 true DE3442645C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-09-13 |
Family
ID=26522213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19843442645 Granted DE3442645A1 (de) | 1983-11-21 | 1984-11-22 | Magnetischer duennfilm |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4618542A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
| DE (1) | DE3442645A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62208412A (ja) * | 1986-03-07 | 1987-09-12 | Hitachi Ltd | 磁気記録媒体およびその製造方法 |
| US5240768A (en) * | 1987-06-12 | 1993-08-31 | Minnesota Mining And Manufacturing Company | Articles containing metal fibers |
| US5091217A (en) * | 1989-05-22 | 1992-02-25 | Advanced Semiconductor Materials, Inc. | Method for processing wafers in a multi station common chamber reactor |
| JP2698814B2 (ja) * | 1989-07-10 | 1998-01-19 | 富士写真フイルム株式会社 | 軟磁性薄膜 |
| US5081069A (en) * | 1989-12-26 | 1992-01-14 | Texas Instruments Incorporated | Method for depositing a Tio2 layer using a periodic and simultaneous tilting and rotating platform motion |
| FR2664294B1 (fr) * | 1990-07-06 | 1992-10-23 | Plasmametal | Procede de metallisation d'une surface. |
| US5043693A (en) * | 1990-08-13 | 1991-08-27 | The United States Of America As Represented By The Secretary Of The Navy | Heterogeneous magnetoresistive layer |
| US5192618A (en) * | 1991-04-26 | 1993-03-09 | International Business Machines Corporation | Corrosion protection by femn by ion implantation |
| US5665640A (en) | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
| US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
| US7688545B1 (en) * | 2002-09-11 | 2010-03-30 | Seagate Technology Llc | Recording head writer with high magnetic moment material at the writer gap and associated process |
| US20160020011A2 (en) * | 2012-09-28 | 2016-01-21 | Seagate Technology Llc | Methods of forming magnetic materials and articles formed thereby |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL265528A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1960-06-02 | |||
| US3206325A (en) * | 1961-09-14 | 1965-09-14 | Alloyd Corp | Process for producing magnetic product |
| US4419381A (en) * | 1982-01-12 | 1983-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Method of making magnetic material layer |
-
1984
- 1984-11-21 US US06/673,987 patent/US4618542A/en not_active Expired - Fee Related
- 1984-11-22 DE DE19843442645 patent/DE3442645A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4618542A (en) | 1986-10-21 |
| DE3442645A1 (de) | 1985-05-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: VOGESER, W., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN BOECKER, J., DIPL.-ING. DR.-ING., PAT.- U. RECHTSANW., 6000 FRANKFURT ALBER, N., DIPL.-ING. UNIV. DIPL.-WIRTSCH.-ING.UNIV STRYCH, W., DR.RER.NAT., PAT.-ANWAELTE, 8000 MUENCHEN |
|
| 8339 | Ceased/non-payment of the annual fee |