DE3434552A1 - Verfahren zur bildung einer pn-grenzschicht - Google Patents

Verfahren zur bildung einer pn-grenzschicht

Info

Publication number
DE3434552A1
DE3434552A1 DE19843434552 DE3434552A DE3434552A1 DE 3434552 A1 DE3434552 A1 DE 3434552A1 DE 19843434552 DE19843434552 DE 19843434552 DE 3434552 A DE3434552 A DE 3434552A DE 3434552 A1 DE3434552 A1 DE 3434552A1
Authority
DE
Germany
Prior art keywords
ion implantation
mass separation
annealing
forming
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19843434552
Other languages
German (de)
English (en)
Other versions
DE3434552C2 (https=
Inventor
Haruo Hino Itoh
Tadashi Tokio/Tokyo Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Energy and Industrial Technology Development Organization
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3434552A1 publication Critical patent/DE3434552A1/de
Application granted granted Critical
Publication of DE3434552C2 publication Critical patent/DE3434552C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Photovoltaic Devices (AREA)
DE19843434552 1983-09-21 1984-09-20 Verfahren zur bildung einer pn-grenzschicht Granted DE3434552A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58172987A JPS6065528A (ja) 1983-09-21 1983-09-21 ｐｎ接合形成法

Publications (2)

Publication Number Publication Date
DE3434552A1 true DE3434552A1 (de) 1985-04-11
DE3434552C2 DE3434552C2 (https=) 1989-10-19

Family

ID=15952071

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843434552 Granted DE3434552A1 (de) 1983-09-21 1984-09-20 Verfahren zur bildung einer pn-grenzschicht

Country Status (3)

Country Link
JP (1) JPS6065528A (https=)
DE (1) DE3434552A1 (https=)
FR (1) FR2552265B1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3727826A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium
DE3727825A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschichtsolarmodul aus kristallinem silizium
EP0999582A3 (en) * 1998-11-05 2000-08-30 Chartered Semiconductor Manufacturing Pte Ltd. N Type impurity doping using implantation of P2+ions or As2+ions
EP2637220A1 (en) * 2012-03-05 2013-09-11 LG Electronics, Inc. Solar cell and method for manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1950069B2 (de) * 1968-10-04 1981-10-08 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Verfahren zum Herstellung einer Halbleiteranordnung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1950069B2 (de) * 1968-10-04 1981-10-08 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Verfahren zum Herstellung einer Halbleiteranordnung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP-Z.: Japanese Journal of Applied Physics, Vol. 21, 1982, Supplement 21-2, S. 7-11 *
US-Z.: Review of Scientific Instruments, Vol. 52, H. 7, Juli 1981, S. 1110-1111 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3727826A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium
DE3727825A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschichtsolarmodul aus kristallinem silizium
EP0999582A3 (en) * 1998-11-05 2000-08-30 Chartered Semiconductor Manufacturing Pte Ltd. N Type impurity doping using implantation of P2+ions or As2+ions
EP2637220A1 (en) * 2012-03-05 2013-09-11 LG Electronics, Inc. Solar cell and method for manufacturing the same
US10355158B2 (en) 2012-03-05 2019-07-16 Lg Electronics Inc. Solar cell and method for manufacturing the same

Also Published As

Publication number Publication date
FR2552265A1 (fr) 1985-03-22
FR2552265B1 (fr) 1990-02-02
DE3434552C2 (https=) 1989-10-19
JPS6065528A (ja) 1985-04-15

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT., PAT.-ANWAELTE, 8000 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT O

8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT. GROENING, H.,DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN