DE3421286A1 - Reaktionsbehaelter fuer das und verfahren zum entfernen von material von einem substrat durch aetzen - Google Patents
Reaktionsbehaelter fuer das und verfahren zum entfernen von material von einem substrat durch aetzenInfo
- Publication number
- DE3421286A1 DE3421286A1 DE19843421286 DE3421286A DE3421286A1 DE 3421286 A1 DE3421286 A1 DE 3421286A1 DE 19843421286 DE19843421286 DE 19843421286 DE 3421286 A DE3421286 A DE 3421286A DE 3421286 A1 DE3421286 A1 DE 3421286A1
- Authority
- DE
- Germany
- Prior art keywords
- etchant
- channel
- substrate
- reaction container
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005530 etching Methods 0.000 title claims description 49
- 238000006243 chemical reaction Methods 0.000 title claims description 48
- 239000000758 substrate Substances 0.000 title claims description 27
- 239000000463 material Substances 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 27
- 239000010949 copper Substances 0.000 claims description 26
- 229910052802 copper Inorganic materials 0.000 claims description 26
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 18
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 16
- 239000000243 solution Substances 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 11
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 239000003153 chemical reaction reagent Substances 0.000 claims description 5
- APTUIUORLSQNEF-UHFFFAOYSA-N dicopper tetranitrate Chemical compound [Cu++].[Cu++].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O APTUIUORLSQNEF-UHFFFAOYSA-N 0.000 claims 2
- 239000006185 dispersion Substances 0.000 claims 2
- 238000012544 monitoring process Methods 0.000 claims 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 239000007921 spray Substances 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000013019 agitation Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/46—Regeneration of etching compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/068—Apparatus for etching printed circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/508,525 US4482425A (en) | 1983-06-27 | 1983-06-27 | Liquid etching reactor and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3421286A1 true DE3421286A1 (de) | 1985-01-03 |
Family
ID=24023090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19843421286 Withdrawn DE3421286A1 (de) | 1983-06-27 | 1984-06-07 | Reaktionsbehaelter fuer das und verfahren zum entfernen von material von einem substrat durch aetzen |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4482425A (enExample) |
| JP (1) | JPS6094727A (enExample) |
| CA (1) | CA1209885A (enExample) |
| DE (1) | DE3421286A1 (enExample) |
| FR (1) | FR2549087B1 (enExample) |
| GB (1) | GB2142283B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3509878A1 (de) * | 1985-03-15 | 1986-09-18 | Peter Dipl.-Ing. 1000 Berlin Gravenhorst | Verfahren und vorrichtung zur herstellung von gedruckten leiterplatten |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3345050A1 (de) * | 1983-12-13 | 1985-06-20 | Walter 7758 Meersburg Holzer | Verfahren zum umweltfreundlichen aetzen von leiterplatten und vorrichtung zur ausuebung des arbeitsverfahrens |
| US4675067A (en) * | 1984-06-13 | 1987-06-23 | The United States Of America As Represented By The Secretary Of The Air Force | Solar cell coverslide extraction apparatus |
| US4545850A (en) * | 1984-08-20 | 1985-10-08 | Psi Star | Regenerative copper etching process and solution |
| US4734151A (en) * | 1987-02-06 | 1988-03-29 | The Aerospace Corporation | Non-contact polishing of semiconductor materials |
| GB2206541A (en) * | 1987-07-02 | 1989-01-11 | Psi Star Inc | Manufacturing printed circuit boards |
| US5002649A (en) * | 1988-03-28 | 1991-03-26 | Sifco Industries, Inc. | Selective stripping apparatus |
| DE3820591A1 (de) * | 1988-06-16 | 1989-12-21 | Texas Instruments Deutschland | Vorrichtung zum nassaetzen von duennen filmen |
| US4904339A (en) * | 1989-05-26 | 1990-02-27 | Psi Star | Vertical spray etch reactor and method |
| US5221420A (en) * | 1991-02-05 | 1993-06-22 | International Business Machines Corporation | Etching method for increased circuitized line width and uniformity |
| US5275690A (en) * | 1992-06-17 | 1994-01-04 | Santa Barbara Research Center | Method and apparatus for wet chemical processing of semiconductor wafers and other objects |
| US6197209B1 (en) | 1995-10-27 | 2001-03-06 | Lg. Philips Lcd Co., Ltd. | Method of fabricating a substrate |
| US6630052B1 (en) | 1996-06-26 | 2003-10-07 | Lg. Philips Lcd Co., Ltd. | Apparatus for etching glass substrate |
| KR0180850B1 (ko) | 1996-06-26 | 1999-03-20 | 구자홍 | 유리기판 에칭장치 |
| KR100265556B1 (ko) | 1997-03-21 | 2000-11-01 | 구본준 | 식각장치 |
| US6327011B2 (en) * | 1997-10-20 | 2001-12-04 | Lg Electronics, Inc. | Liquid crystal display device having thin glass substrate on which protective layer formed and method of making the same |
| KR20000067106A (ko) * | 1999-04-23 | 2000-11-15 | 구본준 | 유리기판 에칭장치 |
| KR100272513B1 (ko) * | 1998-09-08 | 2001-01-15 | 구본준 | 유리기판의 식각장치 |
| KR100308157B1 (ko) | 1998-10-22 | 2001-11-15 | 구본준, 론 위라하디락사 | 액정표시소자용 유리기판 |
| US6372081B1 (en) * | 1999-01-05 | 2002-04-16 | International Business Machines Corporation | Process to prevent copper contamination of semiconductor fabs |
| US6307240B1 (en) | 2000-12-22 | 2001-10-23 | Visteon Global Technologies, Inc. | Pulsed etching manufacturing method and system |
| KR100685918B1 (ko) * | 2000-12-27 | 2007-02-22 | 엘지.필립스 엘시디 주식회사 | 유리기판 식각장치 및 이를 이용한 유리기판 식각방법 |
| US9353625B2 (en) * | 2009-01-13 | 2016-05-31 | General Electric Technology Gmbh | Device for cleaning oxidized or corroded components in the presence of a halogenous gas mixture |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3373755A (en) * | 1965-06-24 | 1968-03-19 | Fuji Photo Film Co Ltd | Sheet material handling and treating apparatus |
| US3751313A (en) * | 1971-08-23 | 1973-08-07 | Us Army | Method of forming rifling in a gun barrel by chemical milling |
| JPS5242138B2 (enExample) * | 1972-12-19 | 1977-10-22 | ||
| JPS5093775A (enExample) * | 1973-12-19 | 1975-07-26 | ||
| JPS522293A (en) * | 1975-06-24 | 1977-01-08 | Hitachi Ltd | Method of formig wiring layer |
| GB2103154A (en) * | 1981-05-11 | 1983-02-16 | Airvision Engineering Ltd | Liquid treatment of articles |
| US4376009A (en) * | 1982-04-29 | 1983-03-08 | Rca Corporation | Limp-stream method for selectively etching integral cathode substrate and support |
-
1983
- 1983-06-27 US US06/508,525 patent/US4482425A/en not_active Expired - Fee Related
-
1984
- 1984-05-03 CA CA000453432A patent/CA1209885A/en not_active Expired
- 1984-06-07 DE DE19843421286 patent/DE3421286A1/de not_active Withdrawn
- 1984-06-18 GB GB08415502A patent/GB2142283B/en not_active Expired
- 1984-06-27 FR FR8410140A patent/FR2549087B1/fr not_active Expired
- 1984-06-27 JP JP59132814A patent/JPS6094727A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3509878A1 (de) * | 1985-03-15 | 1986-09-18 | Peter Dipl.-Ing. 1000 Berlin Gravenhorst | Verfahren und vorrichtung zur herstellung von gedruckten leiterplatten |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2142283A (en) | 1985-01-16 |
| JPS6094727A (ja) | 1985-05-27 |
| US4482425A (en) | 1984-11-13 |
| GB2142283B (en) | 1986-07-09 |
| FR2549087A1 (fr) | 1985-01-18 |
| CA1209885A (en) | 1986-08-19 |
| FR2549087B1 (fr) | 1989-01-13 |
| GB8415502D0 (en) | 1984-07-25 |
| JPH0231873B2 (enExample) | 1990-07-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |