DE3382017D1 - Kompakter festwertspeicher mit reduzierter zugriffzeit. - Google Patents
Kompakter festwertspeicher mit reduzierter zugriffzeit.Info
- Publication number
- DE3382017D1 DE3382017D1 DE8383302747T DE3382017T DE3382017D1 DE 3382017 D1 DE3382017 D1 DE 3382017D1 DE 8383302747 T DE8383302747 T DE 8383302747T DE 3382017 T DE3382017 T DE 3382017T DE 3382017 D1 DE3382017 D1 DE 3382017D1
- Authority
- DE
- Germany
- Prior art keywords
- access time
- fixed memory
- reduced access
- compact fixed
- compact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
- G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/383,709 US4480320A (en) | 1982-06-01 | 1982-06-01 | Compact ROM with reduced access time |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3382017D1 true DE3382017D1 (de) | 1991-01-10 |
Family
ID=23514350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383302747T Expired - Lifetime DE3382017D1 (de) | 1982-06-01 | 1983-05-16 | Kompakter festwertspeicher mit reduzierter zugriffzeit. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4480320A (de) |
EP (1) | EP0095847B1 (de) |
JP (1) | JPS58218100A (de) |
DE (1) | DE3382017D1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4545033A (en) * | 1982-06-01 | 1985-10-01 | General Instrument Corp. | Compact ROM with reduced access time |
US4539661A (en) * | 1982-06-30 | 1985-09-03 | Fujitsu Limited | Static-type semiconductor memory device |
JPS59100562A (ja) * | 1982-11-30 | 1984-06-09 | Mitsubishi Electric Corp | 読み出し専用半導体記憶装置の製造方法 |
US4638459A (en) * | 1985-01-31 | 1987-01-20 | Standard Microsystems Corp. | Virtual ground read only memory |
JPH0734316B2 (ja) * | 1985-05-08 | 1995-04-12 | セイコーエプソン株式会社 | 半導体メモリ回路 |
US4744053A (en) * | 1985-07-22 | 1988-05-10 | General Instrument Corp. | ROM with mask programmable page configuration |
US5231603A (en) * | 1985-07-22 | 1993-07-27 | Microchip Technology Incorporated | Variable page ROM |
US5313420A (en) * | 1987-04-24 | 1994-05-17 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory |
JP2894170B2 (ja) * | 1993-08-18 | 1999-05-24 | 日本電気株式会社 | メモリ装置 |
JP2908332B2 (ja) * | 1996-07-30 | 1999-06-21 | 日本電気アイシーマイコンシステム株式会社 | 半導体メモリ回路 |
US5894432A (en) * | 1997-07-08 | 1999-04-13 | International Business Machines Corporation | CMOS memory cell with improved read port |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4183093A (en) * | 1975-09-04 | 1980-01-08 | Hitachi, Ltd. | Semiconductor integrated circuit device composed of insulated gate field-effect transistor |
JPS6020902B2 (ja) * | 1977-04-08 | 1985-05-24 | 日本電気株式会社 | 読み出し専用記憶装置 |
JPS54132140A (en) * | 1978-04-06 | 1979-10-13 | Nec Corp | Memory circuit |
JPS5552593A (en) * | 1978-10-11 | 1980-04-17 | Nec Corp | Memory unit |
US4274147A (en) * | 1979-09-04 | 1981-06-16 | Rockwell International Corporation | Static read only memory |
US4344156A (en) * | 1980-10-10 | 1982-08-10 | Inmos Corporation | High speed data transfer for a semiconductor memory |
-
1982
- 1982-06-01 US US06/383,709 patent/US4480320A/en not_active Expired - Lifetime
-
1983
- 1983-05-16 EP EP83302747A patent/EP0095847B1/de not_active Expired - Lifetime
- 1983-05-16 DE DE8383302747T patent/DE3382017D1/de not_active Expired - Lifetime
- 1983-06-01 JP JP58095876A patent/JPS58218100A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS58218100A (ja) | 1983-12-19 |
US4480320A (en) | 1984-10-30 |
EP0095847B1 (de) | 1990-11-28 |
EP0095847A2 (de) | 1983-12-07 |
EP0095847A3 (en) | 1985-10-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |