DE3381832D1 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE3381832D1
DE3381832D1 DE8383100882T DE3381832T DE3381832D1 DE 3381832 D1 DE3381832 D1 DE 3381832D1 DE 8383100882 T DE8383100882 T DE 8383100882T DE 3381832 T DE3381832 T DE 3381832T DE 3381832 D1 DE3381832 D1 DE 3381832D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383100882T
Other languages
German (de)
English (en)
Inventor
Takashi Kajimura
Takao Kuroda
Yasutoshi Kashiwada
Naoki Chinone
Kunio Aiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3381832D1 publication Critical patent/DE3381832D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8383100882T 1982-02-03 1983-01-31 Halbleiterlaservorrichtung. Expired - Lifetime DE3381832D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57014986A JPS58132986A (ja) 1982-02-03 1982-02-03 半導体レ−ザ装置

Publications (1)

Publication Number Publication Date
DE3381832D1 true DE3381832D1 (de) 1990-10-04

Family

ID=11876270

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383100882T Expired - Lifetime DE3381832D1 (de) 1982-02-03 1983-01-31 Halbleiterlaservorrichtung.

Country Status (5)

Country Link
US (1) US4630279A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0085423B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS58132986A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR840003925A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3381832D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362292A (ja) * 1986-09-02 1988-03-18 Mitsubishi Electric Corp 半導体レ−ザ装置およびその製造方法
JPS6373685A (ja) * 1986-09-17 1988-04-04 Mitsubishi Electric Corp 半導体レ−ザアレイおよびその製造方法
JPH0461292A (ja) * 1990-06-28 1992-02-27 Mitsubishi Electric Corp 半導体レーザ
US5650635A (en) * 1995-07-14 1997-07-22 Northwestern University Multiple stacked Sb-based heterostructures
JPH1012958A (ja) * 1996-06-19 1998-01-16 Mitsubishi Electric Corp 半導体レーザ装置，及びその製造方法
JP4387472B2 (ja) 1998-02-18 2009-12-16 三菱電機株式会社 半導体レーザ
JP2001281473A (ja) * 2000-03-28 2001-10-10 Toshiba Corp フォトニクス結晶及びその製造方法、光モジュール並びに光システム
JP2004214911A (ja) * 2002-12-27 2004-07-29 Sanyo Electric Co Ltd Ａｇｃ回路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978428A (en) * 1975-06-23 1976-08-31 Xerox Corporation Buried-heterostructure diode injection laser
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
US4185256A (en) * 1978-01-13 1980-01-22 Xerox Corporation Mode control of heterojunction injection lasers and method of fabrication
JPS54152879A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture
CA1137605A (en) * 1979-01-15 1982-12-14 Donald R. Scifres High output power laser
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers
JPS55125692A (en) * 1979-03-22 1980-09-27 Nec Corp Semiconductor laser
JPS56162894A (en) * 1980-05-19 1981-12-15 Matsushita Electric Ind Co Ltd Semiconductor laser

Also Published As

Publication number Publication date
KR840003925A (ko) 1984-10-04
EP0085423A3 (en) 1986-11-20
JPH0416032B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-03-19
EP0085423B1 (en) 1990-08-29
US4630279A (en) 1986-12-16
JPS58132986A (ja) 1983-08-08
EP0085423A2 (en) 1983-08-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee