DE3380193D1 - Functional command for semiconductor memory - Google Patents

Functional command for semiconductor memory

Info

Publication number
DE3380193D1
DE3380193D1 DE8383103847T DE3380193T DE3380193D1 DE 3380193 D1 DE3380193 D1 DE 3380193D1 DE 8383103847 T DE8383103847 T DE 8383103847T DE 3380193 T DE3380193 T DE 3380193T DE 3380193 D1 DE3380193 D1 DE 3380193D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
functional command
command
functional
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383103847T
Other languages
English (en)
Inventor
Andrew C Graham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Inc
Application granted granted Critical
Publication of DE3380193D1 publication Critical patent/DE3380193D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/835—Masking faults in memories by using spares or by reconfiguring using programmable devices with roll call arrangements for redundant substitutions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31701—Arrangements for setting the Unit Under Test [UUT] in a test mode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/46—Test trigger logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Test And Diagnosis Of Digital Computers (AREA)
DE8383103847T 1982-04-20 1983-04-20 Functional command for semiconductor memory Expired DE3380193D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/370,172 US4507761A (en) 1982-04-20 1982-04-20 Functional command for semiconductor memory

Publications (1)

Publication Number Publication Date
DE3380193D1 true DE3380193D1 (en) 1989-08-17

Family

ID=23458530

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383103847T Expired DE3380193D1 (en) 1982-04-20 1983-04-20 Functional command for semiconductor memory

Country Status (4)

Country Link
US (1) US4507761A (de)
EP (1) EP0092245B1 (de)
JP (1) JPS58222500A (de)
DE (1) DE3380193D1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663735A (en) * 1983-12-30 1987-05-05 Texas Instruments Incorporated Random/serial access mode selection circuit for a video memory system
JPS60242587A (ja) * 1984-05-16 1985-12-02 Hitachi Micro Comput Eng Ltd ダイナミツク型ｒａｍ
US4608669A (en) * 1984-05-18 1986-08-26 International Business Machines Corporation Self contained array timing
JPS6238599A (ja) * 1985-08-13 1987-02-19 Mitsubishi Electric Corp 半導体記憶装置
JPS62250593A (ja) * 1986-04-23 1987-10-31 Hitachi Ltd ダイナミツク型ｒａｍ
EP0263312A3 (de) * 1986-09-08 1989-04-26 Kabushiki Kaisha Toshiba Halbleiterspeichergerät mit Selbstprüfungsfunktion
FR2623652A1 (fr) * 1987-11-20 1989-05-26 Philips Nv Unite de memoire statique a plusieurs modes de test et ordinateur muni de telles unites
US5173878A (en) * 1987-11-25 1992-12-22 Kabushiki Kaisha Toshiba Semiconductor memory including address multiplexing circuitry for changing the order of supplying row and column addresses between read and write cycles
JPH0770213B2 (ja) * 1988-10-03 1995-07-31 三菱電機株式会社 半導体メモリ装置
JPH02177194A (ja) * 1988-12-28 1990-07-10 Mitsubishi Electric Corp ダイナミックランダムアクセスメモリ装置
JPH081747B2 (ja) * 1989-05-08 1996-01-10 三菱電機株式会社 半導体記憶装置およびその動作方法
DE69120483T2 (de) * 1990-08-17 1996-11-14 Sgs Thomson Microelectronics Halbleiter-Speicher mit unterdrücktem Testmodus-Eingang während des Strom-Einschaltens
JPH05216741A (ja) * 1992-05-20 1993-08-27 Hitachi Ltd 記憶回路及びその動作モード設定方法
JPH06295599A (ja) * 1993-04-09 1994-10-21 Nec Corp 半導体記憶装置
JP3919847B2 (ja) * 1996-05-29 2007-05-30 三菱電機株式会社 半導体記憶装置
US5812470A (en) * 1996-09-10 1998-09-22 Micron Technology, Inc. Apparatus, system and method for identifying semiconductor memory access modes
JPH09185900A (ja) * 1996-11-27 1997-07-15 Hitachi Ltd ダイナミック型ｒａｍ
JP4707255B2 (ja) * 2001-04-26 2011-06-22 ルネサスエレクトロニクス株式会社 半導体記憶装置
US6883105B2 (en) * 2001-10-25 2005-04-19 Standard Microsystems Corporation Method and apparatus for configuration control and power management through special signaling
US7757061B2 (en) * 2005-05-03 2010-07-13 Micron Technology, Inc. System and method for decoding commands based on command signals and operating state
JP2007018710A (ja) * 2006-09-05 2007-01-25 Fujitsu Ltd 半導体装置及びその試験方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969706A (en) * 1974-10-08 1976-07-13 Mostek Corporation Dynamic random access memory misfet integrated circuit
US4473895A (en) * 1979-06-15 1984-09-25 Fujitsu Limited Semiconductor memory device
JPS5951073B2 (ja) * 1980-03-27 1984-12-12 富士通株式会社 半導体記憶装置
US4412314A (en) * 1980-06-02 1983-10-25 Mostek Corporation Semiconductor memory for use in conjunction with error detection and correction circuit
JPS5727041A (en) * 1980-07-25 1982-02-13 Hitachi Ltd Large-scale integrated circuit having testing function
JPS5760865A (en) * 1980-09-30 1982-04-13 Nec Corp Integrated circuit device

Also Published As

Publication number Publication date
EP0092245A2 (de) 1983-10-26
US4507761A (en) 1985-03-26
JPS6237480B2 (de) 1987-08-12
EP0092245B1 (de) 1989-07-12
EP0092245A3 (en) 1986-11-20
JPS58222500A (ja) 1983-12-24

Similar Documents

Publication Publication Date Title
DE3375965D1 (en) Semiconductor memory
DE3377687D1 (en) Semiconductor memory
GB8510570D0 (en) Semiconductor memory
GB8519907D0 (en) Semiconductor memory
DE3380004D1 (en) Semiconductor memory device
DE3370092D1 (en) Semiconductor memory device
DE3377436D1 (en) Semiconductor memory device
DE3380193D1 (en) Functional command for semiconductor memory
DE3379366D1 (en) Semiconductor memory device
DE3374103D1 (en) Semiconductor memory device
GB8325232D0 (en) Semiconductor memory
DE3376704D1 (en) Semiconductor memory device
GB2117202B (en) Semiconductor memory
IE831541L (en) Semiconductor memory
GB8317749D0 (en) Semiconductor memory
GB2131604B (en) Semiconductor memories
DE3377600D1 (en) Semiconductor memory device
GB8304331D0 (en) Semiconductor memory
DE3364334D1 (en) Semiconductor memory device
DE3375748D1 (en) Semiconductor memory device
GB2132843B (en) Semiconductor memory
MY8700643A (en) A semiconductor memory
SG87087G (en) A semiconductor memory

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee