DE3367259D1 - Lead frame and method for manufacturing the same - Google Patents

Lead frame and method for manufacturing the same

Info

Publication number
DE3367259D1
DE3367259D1 DE8383112791T DE3367259T DE3367259D1 DE 3367259 D1 DE3367259 D1 DE 3367259D1 DE 8383112791 T DE8383112791 T DE 8383112791T DE 3367259 T DE3367259 T DE 3367259T DE 3367259 D1 DE3367259 D1 DE 3367259D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
lead frame
lead
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383112791T
Other languages
German (de)
English (en)
Inventor
Shinzo Sugai
Shigemi Yamane
Takashi Kuze
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16907314&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3367259(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3367259D1 publication Critical patent/DE3367259D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Conductive Materials (AREA)
DE8383112791T 1982-12-23 1983-12-19 Lead frame and method for manufacturing the same Expired DE3367259D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57230402A JPS59117144A (ja) 1982-12-23 1982-12-23 リ−ドフレ−ムおよびその製造方法

Publications (1)

Publication Number Publication Date
DE3367259D1 true DE3367259D1 (en) 1986-12-04

Family

ID=16907314

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383112791T Expired DE3367259D1 (en) 1982-12-23 1983-12-19 Lead frame and method for manufacturing the same

Country Status (4)

Country Link
US (1) US4640723A (enExample)
EP (1) EP0114338B2 (enExample)
JP (1) JPS59117144A (enExample)
DE (1) DE3367259D1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117144A (ja) * 1982-12-23 1984-07-06 Toshiba Corp リ−ドフレ−ムおよびその製造方法
US4656003A (en) * 1984-10-20 1987-04-07 Kabushiki Kaisha Kobe Seiko Sho Copper alloy and production of the same
DE3511999A1 (de) * 1985-04-02 1986-10-02 Wieland-Werke Ag, 7900 Ulm Verwendung einer kupfer-titan-kobalt-legierung als werkstoff fuer elektronische bauteile
EP0250146A1 (en) * 1986-06-16 1987-12-23 Texas Instruments Incorporated Palladium plated lead frame for integrated circuit
DE3769860D1 (de) * 1986-06-25 1991-06-13 Toshiba Kawasaki Kk Waermekopf.
DE3854682T2 (de) * 1987-05-26 1996-04-25 Nippon Steel Corp Eisen-Kupfer-Chrom-Legierung für einen hochfesten Leiterrahmen oder ein Steckstiftgitter und Verfahren zu ihrer Herstellung.
JP3431139B2 (ja) * 1990-05-31 2003-07-28 株式会社東芝 リードフレームとその製造方法および半導体パッケージ
DE69110435T2 (de) * 1990-12-20 1995-11-16 Toshiba Kawasaki Kk Kupferlegierungen und daraus hergestellte Leitergitter.
DE4219953C2 (de) * 1992-06-18 1996-05-30 Diehl Gmbh & Co Herstellung von Druckglasdurchführungen mit Fassungen aus ausscheidungshärtbaren Legierungen
EP0667640A3 (en) * 1994-01-14 1997-05-14 Brush Wellman Multi-layer laminate product and its manufacture.
US5777259A (en) * 1994-01-14 1998-07-07 Brush Wellman Inc. Heat exchanger assembly and method for making the same
DE19530673A1 (de) * 1994-09-15 1996-03-21 Siemens Ag Oberleitungsdraht einer elektrischen Hochgeschwindigkeitsbahnstrecke und Verfahren zu dessen Herstellung
US6022426A (en) * 1995-05-31 2000-02-08 Brush Wellman Inc. Multilayer laminate process
US6053994A (en) * 1997-09-12 2000-04-25 Fisk Alloy Wire, Inc. Copper alloy wire and cable and method for preparing same
WO1999023700A1 (en) 1997-11-05 1999-05-14 Martin Robert A Chip housing, methods of making same and methods for mounting chips therein
AU2003252210A1 (en) * 2002-07-18 2004-02-09 Honda Giken Kogyo Kabushiki Kaisha Copper alloy, copper alloy producing method, copper complex material, and copper complex material producing method
JP3731600B2 (ja) * 2003-09-19 2006-01-05 住友金属工業株式会社 銅合金およびその製造方法
JP2008088558A (ja) * 2007-10-17 2008-04-17 Nikko Kinzoku Kk 延性に優れた高力高導電性銅合金
KR101092616B1 (ko) * 2008-04-29 2011-12-13 일진머티리얼즈 주식회사 전자 부품용 금속 프레임
CN108866378B (zh) * 2018-06-05 2020-01-07 北京科技大学 一种高温环境用高强高导电率铜合金及其制备方法
CN112126815A (zh) * 2020-09-25 2020-12-25 宁波博威合金板带有限公司 一种铜铬合金带材及其制备方法
CN113564408B (zh) * 2021-07-29 2022-04-19 内蒙古工业大学 一种高强高导稀土铜合金Cu-Cr-Zr-Y及其制备方法
CN115612871B (zh) * 2022-09-20 2023-12-22 陕西斯瑞新材料股份有限公司 一种核电汽轮发电机转子楔用铜合金的加工工艺
CN116240420B (zh) * 2022-12-12 2025-06-27 中国科学院金属研究所 一种多相协同引线框架用铜合金及其制备方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA730642A (en) * 1966-03-22 R. Pels Alan Copper chromium zirconium alloy
GB512142A (en) * 1937-11-19 1939-08-30 Mallory & Co Inc P R Improvements in copper base alloys
GB921795A (en) * 1961-01-27 1963-03-27 Mallory Metallurg Prod Ltd Improvements in and relating to copper-base alloys
GB1094579A (en) * 1965-10-15 1967-12-13 American Metal Climax Inc Copper-zirconium-magnesium alloy
SU515818A1 (ru) * 1971-07-20 1976-05-30 Государственный Научно-Исследовательский И Проектный Институт Сплавов И Обработки Цветных Металлов Сплав на основе меди
FR2198491A5 (en) * 1972-09-05 1974-03-29 G Auchno Copper alloy, with high conductivity and tensile strength - for electrical conductors
DE2243731B2 (de) * 1972-09-06 1975-08-14 Gosudarstwenny Nautschno-Issledowatelskij I Projektnyj Institut Splawow I Obrabotki Zwetnych Metallow Giprozwetmetobrabotka, Moskau Aushärtbare Kupferlegierung
JPS50145317A (enExample) * 1974-05-15 1975-11-21
US4067750A (en) * 1976-01-28 1978-01-10 Olin Corporation Method of processing copper base alloys
JPS52150327A (en) * 1976-06-10 1977-12-14 Toshiba Corp Lead wire and its production method
DE2635454C2 (de) * 1976-08-06 1986-02-27 Kabel- und Metallwerke Gutehoffnungshütte AG, 3000 Hannover Verwendung einer Kupferlegierung
US4049426A (en) * 1976-10-04 1977-09-20 Olin Corporation Copper-base alloys containing chromium, niobium and zirconium
US4047980A (en) * 1976-10-04 1977-09-13 Olin Corporation Processing chromium-containing precipitation hardenable copper base alloys
JPS54100257A (en) * 1978-01-25 1979-08-07 Toshiba Corp Lead frame
JPS5839901B2 (ja) * 1978-03-10 1983-09-02 日本鉱業株式会社 リ−ドフレ−ム用の銅合金
JPS55102260A (en) * 1979-01-31 1980-08-05 Nippon Gakki Seizo Kk Leadframe
US4224066A (en) * 1979-06-26 1980-09-23 Olin Corporation Copper base alloy and process
JPS5625940A (en) * 1979-08-07 1981-03-12 Toshiba Corp Refinig method of copper alloy
DE3070776D1 (en) * 1979-07-30 1985-07-25 Toshiba Kk A method for manufacturing an electrically conductive copper alloy material
JPS5620136A (en) * 1979-07-30 1981-02-25 Toshiba Corp Copper alloy member
JPS56102537A (en) * 1980-01-16 1981-08-17 Toshiba Corp Copper alloy member
JPS57155355A (en) * 1981-03-18 1982-09-25 Showa Electric Wire & Cable Co Ltd Manufacture of copper alloy for electricity conduction
JPS58108761A (ja) * 1981-12-23 1983-06-28 Toshiba Corp 電子部品
JPS59117144A (ja) * 1982-12-23 1984-07-06 Toshiba Corp リ−ドフレ−ムおよびその製造方法

Also Published As

Publication number Publication date
JPH0118977B2 (enExample) 1989-04-10
EP0114338B2 (en) 1997-08-27
EP0114338A1 (en) 1984-08-01
JPS59117144A (ja) 1984-07-06
US4640723A (en) 1987-02-03
EP0114338B1 (en) 1986-10-29

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings
8320 Willingness to grant licences declared (paragraph 23)