DE3348416C2 - Ätzmittellösung zur Bildung von Ätzmustern in einer Polyimid- oder einer Polyimid-iso-Indrochinazolindion-Isolationsschicht eines Halbleiterbauelements - Google Patents

Ätzmittellösung zur Bildung von Ätzmustern in einer Polyimid- oder einer Polyimid-iso-Indrochinazolindion-Isolationsschicht eines Halbleiterbauelements

Info

Publication number
DE3348416C2
DE3348416C2 DE3348416A DE3348416A DE3348416C2 DE 3348416 C2 DE3348416 C2 DE 3348416C2 DE 3348416 A DE3348416 A DE 3348416A DE 3348416 A DE3348416 A DE 3348416A DE 3348416 C2 DE3348416 C2 DE 3348416C2
Authority
DE
Germany
Prior art keywords
polyimide
etching
layer
openings
pic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3348416A
Other languages
German (de)
English (en)
Inventor
Jagdish G Belani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Application granted granted Critical
Publication of DE3348416C2 publication Critical patent/DE3348416C2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • ing And Chemical Polishing (AREA)
DE3348416A 1982-05-06 1983-05-03 Ätzmittellösung zur Bildung von Ätzmustern in einer Polyimid- oder einer Polyimid-iso-Indrochinazolindion-Isolationsschicht eines Halbleiterbauelements Expired - Lifetime DE3348416C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/375,575 US4411735A (en) 1982-05-06 1982-05-06 Polymeric insulation layer etching process and composition

Publications (1)

Publication Number Publication Date
DE3348416C2 true DE3348416C2 (de) 1993-10-07

Family

ID=23481408

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3348416A Expired - Lifetime DE3348416C2 (de) 1982-05-06 1983-05-03 Ätzmittellösung zur Bildung von Ätzmustern in einer Polyimid- oder einer Polyimid-iso-Indrochinazolindion-Isolationsschicht eines Halbleiterbauelements
DE19833316041 Granted DE3316041A1 (de) 1982-05-06 1983-05-03 Verfahren zur herstellung von halbleiterbauelementen durch aetzen und aetzmittel

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19833316041 Granted DE3316041A1 (de) 1982-05-06 1983-05-03 Verfahren zur herstellung von halbleiterbauelementen durch aetzen und aetzmittel

Country Status (3)

Country Link
US (1) US4411735A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS58218124A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE3348416C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2095905B (en) * 1981-03-27 1985-01-16 Philips Electronic Associated Infra-red radiation imaging devices and methods for their manufacture
US4487652A (en) * 1984-03-30 1984-12-11 Motorola, Inc. Slope etch of polyimide
DE3580827D1 (de) * 1984-10-09 1991-01-17 Hoechst Japan K K Verfahren zum entwickeln und zum entschichten von photoresistschichten mit quaternaeren ammomiumverbindungen.
US4827326A (en) * 1987-11-02 1989-05-02 Motorola, Inc. Integrated circuit having polyimide/metal passivation layer and method of manufacture using metal lift-off
DE3740369A1 (de) * 1987-11-25 1989-06-08 Schering Ag Verfahren zur vorbehandlung von kunststoffen
US4857143A (en) * 1988-12-16 1989-08-15 International Business Machines Corp. Wet etching of cured polyimide
US5183534A (en) * 1990-03-09 1993-02-02 Amoco Corporation Wet-etch process and composition
US5091290A (en) * 1990-12-03 1992-02-25 Micron Technology, Inc. Process for promoting adhesion of a layer of photoresist on a substrate having a previous layer of photoresist
US5470693A (en) * 1992-02-18 1995-11-28 International Business Machines Corporation Method of forming patterned polyimide films
US5242864A (en) * 1992-06-05 1993-09-07 Intel Corporation Polyimide process for protecting integrated circuits
US5804090A (en) * 1995-03-20 1998-09-08 Nissan Motor Co., Ltd. Process for etching semiconductors using a hydrazine and metal hydroxide-containing etching solution
US5925260A (en) * 1997-01-02 1999-07-20 Micron Technology, Inc. Removal of polyimide from dies and wafers
KR100837987B1 (ko) * 2000-06-21 2008-06-16 텍사스 인스트루먼츠 인코포레이티드 용해 수지를 이용하는 마이크로 전기기계 시스템 장치의재코팅 방법
US6739931B2 (en) * 2000-09-18 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the display device
EP1343206B1 (en) * 2002-03-07 2016-10-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus
KR100941129B1 (ko) * 2002-03-26 2010-02-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 및 그의 제조방법
GB2387026A (en) * 2002-03-28 2003-10-01 Zarlink Semiconductor Ltd Method of coating contact holes in MEMS and micro-machining applications
US7579771B2 (en) * 2002-04-23 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7786496B2 (en) 2002-04-24 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP2003317971A (ja) 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US7897979B2 (en) 2002-06-07 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP4216008B2 (ja) * 2002-06-27 2009-01-28 株式会社半導体エネルギー研究所 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、ｄｖｄプレーヤー、電子遊技機器、または携帯情報端末
JP4373086B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 発光装置
DE10394275T5 (de) * 2003-07-28 2006-06-22 Dow Corning Corp., Midland Verfahren zur Ätzung einer Siliconschicht in Musterform
JP2005085799A (ja) * 2003-09-04 2005-03-31 Seiko Epson Corp 成膜方法、配線パターンの形成方法、半導体装置の製造方法、電気光学装置、及び電子機器
US20070120089A1 (en) * 2005-11-28 2007-05-31 3M Innovative Properties Company Polymer etchant and method of using same
CN104617111B (zh) * 2015-02-03 2017-08-25 京东方科技集团股份有限公司 基板及其制造方法、显示装置
TWI658936B (zh) * 2018-02-07 2019-05-11 台虹科技股份有限公司 覆蓋膜及其應用

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3179634A (en) * 1962-01-26 1965-04-20 Du Pont Aromatic polyimides and the process for preparing them
US3361589A (en) * 1964-10-05 1968-01-02 Du Pont Process for treating polyimide surface with basic compounds, and polyimide surface having thin layer of polyamide acid
US3767490A (en) * 1971-06-29 1973-10-23 Ibm Process for etching organic coating layers
US3770528A (en) * 1971-09-29 1973-11-06 Martin Processing Co Inc Method for the surface treatment of polyimide materials
US3791848A (en) * 1972-05-19 1974-02-12 Western Electric Co A method of improving the adherence of a metal deposit to a polyimide surface
US3871930A (en) * 1973-12-19 1975-03-18 Texas Instruments Inc Method of etching films made of polyimide based polymers
US4113550A (en) * 1974-08-23 1978-09-12 Hitachi, Ltd. Method for fabricating semiconductor device and etchant for polymer resin
US4218283A (en) * 1974-08-23 1980-08-19 Hitachi, Ltd. Method for fabricating semiconductor device and etchant for polymer resin

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1230421A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1967-09-15 1971-05-05
DE2541624C2 (de) * 1975-09-18 1982-09-16 Ibm Deutschland Gmbh, 7000 Stuttgart Wässrige Ätzlösung und Verfahren zum Ätzen von Polymerfilmen oder Folien auf Polyimidbasis

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3179634A (en) * 1962-01-26 1965-04-20 Du Pont Aromatic polyimides and the process for preparing them
US3361589A (en) * 1964-10-05 1968-01-02 Du Pont Process for treating polyimide surface with basic compounds, and polyimide surface having thin layer of polyamide acid
US3767490A (en) * 1971-06-29 1973-10-23 Ibm Process for etching organic coating layers
US3770528A (en) * 1971-09-29 1973-11-06 Martin Processing Co Inc Method for the surface treatment of polyimide materials
US3791848A (en) * 1972-05-19 1974-02-12 Western Electric Co A method of improving the adherence of a metal deposit to a polyimide surface
US3871930A (en) * 1973-12-19 1975-03-18 Texas Instruments Inc Method of etching films made of polyimide based polymers
US4113550A (en) * 1974-08-23 1978-09-12 Hitachi, Ltd. Method for fabricating semiconductor device and etchant for polymer resin
US4218283A (en) * 1974-08-23 1980-08-19 Hitachi, Ltd. Method for fabricating semiconductor device and etchant for polymer resin

Also Published As

Publication number Publication date
JPS58218124A (ja) 1983-12-19
DE3316041C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-09-17
JPH0416010B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-03-19
DE3316041A1 (de) 1983-11-10
US4411735A (en) 1983-10-25

Similar Documents

Publication Publication Date Title
DE3348416C2 (de) Ätzmittellösung zur Bildung von Ätzmustern in einer Polyimid- oder einer Polyimid-iso-Indrochinazolindion-Isolationsschicht eines Halbleiterbauelements
DE3685906T2 (de) Hochtemperatur abhebeverfahren ohne zwischenschicht fuer eine strukturierte zwischenverbindungsschicht.
DE2615862C2 (de) Verfahren zum Herstellen einer ebenen Verdrahtungsstruktur auf einem Substrat mit Hilfe eines Abhebeprozesses
DE69937561T2 (de) Photolithographisch hergestellter, integrierter kondensator mit selbst-ausgerichteten elektroden und dielektrika
DE69935100T2 (de) Verfahren zur Ätzung einer Metallisierung mittels einer harten Maske
EP0057738B1 (de) Verfahren zum Herstellen und Füllen von Löchern in einer auf einem Substrat aufliegenden Schicht
DE2541624C2 (de) Wässrige Ätzlösung und Verfahren zum Ätzen von Polymerfilmen oder Folien auf Polyimidbasis
DE3856202T2 (de) Triamin-Entschichtungslösung für positive Photolacke
DE3687409T2 (de) Verfahren zur herstellung von schmalen, leitenden linien, von mustern und von verbindern.
DE69111890T2 (de) Verfahren zur Herstellung einer Mehrschichtleiterplatte.
DE69317696T2 (de) Polyimid-Verfahren zum Schutz integrierter Schaltungen
DE2326314C2 (de) Verfahren zur Herstellung von Reliefstrukturen
DE2455357B2 (de) Halbleiterbauelement und verfahren zu seiner herstellung
DE69708787T2 (de) Verfahren zur herstellung von filmmustern unter anwendung der abhebetechnologie
DE68920291T2 (de) Verfahren zum Herstellen von leitenden Bahnen und Stützen.
DE4102422A1 (de) Verfahren zur herstellung einer in mehreren ebenen angeordneten leiterstruktur einer halbleitervorrichtung
DE2227344C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE10237042A1 (de) Zusammensetzung und Verfahren zur Resistentfernung
DE68919290T2 (de) Nasssätzung von ausgehärteten Polyimiden.
DE2709933A1 (de) Verfahren zum herstellen durchgehender metallischer verbindungen zwischen mehreren metallisierungsebenen in halbleitervorrichtungen
DE69916684T3 (de) Verwendung einer flüssigen Zusammensetzung zum Photoresist-Entschichten
DE2227344B2 (de) Verfahren zum aetzen von oeffnungen in eine schicht aus organischem material
DE3782389T2 (de) "lift-off" verfahren zur herstellung von leiterbahnen auf einem substrat.
WO2005023940A2 (de) Integrierte schaltung mit einem organischen halbleiter und verfahren zur herstellung einer integrierten schaltung
EP0013728B1 (de) Verfahren zur Herstellung von elektrischen Verbindungen zwischen Leiterschichten in Halbleiterstrukturen

Legal Events

Date Code Title Description
Q172 Divided out of (supplement):

Ref country code: DE

Ref document number: 3316041

8110 Request for examination paragraph 44
8181 Inventor (new situation)

Free format text: BELANI, JAGDISH G., CUPERTINO, CALIF., US

AC Divided out of

Ref country code: DE

Ref document number: 3316041

Format of ref document f/p: P

AC Divided out of

Ref country code: DE

Ref document number: 3316041

Format of ref document f/p: P

D2 Grant after examination
8364 No opposition during term of opposition