DE3313695C2 - - Google Patents
Info
- Publication number
- DE3313695C2 DE3313695C2 DE3313695A DE3313695A DE3313695C2 DE 3313695 C2 DE3313695 C2 DE 3313695C2 DE 3313695 A DE3313695 A DE 3313695A DE 3313695 A DE3313695 A DE 3313695A DE 3313695 C2 DE3313695 C2 DE 3313695C2
- Authority
- DE
- Germany
- Prior art keywords
- induction coil
- coil
- si3n4
- screws
- adjusting devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000006698 induction Effects 0.000 claims description 32
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims 3
- 238000004804 winding Methods 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 229910003910 SiCl4 Inorganic materials 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000004018 waxing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 206010041662 Splinter Diseases 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982055268U JPS58158438U (ja) | 1982-04-16 | 1982-04-16 | エピタキシヤル成長装置のコイル保持装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3313695A1 DE3313695A1 (de) | 1983-10-27 |
| DE3313695C2 true DE3313695C2 (enrdf_load_stackoverflow) | 1987-10-22 |
Family
ID=12993852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833313695 Granted DE3313695A1 (de) | 1982-04-16 | 1983-04-15 | Geraet zum epitaxialen aufwachsen von schichten auf halbleitersubstraten |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS58158438U (enrdf_load_stackoverflow) |
| KR (1) | KR840004824A (enrdf_load_stackoverflow) |
| DE (1) | DE3313695A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2120279B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1271233B (it) * | 1994-09-30 | 1997-05-27 | Lpe | Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati |
| US6436796B1 (en) * | 2000-01-31 | 2002-08-20 | Mattson Technology, Inc. | Systems and methods for epitaxial processing of a semiconductor substrate |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4921091B1 (enrdf_load_stackoverflow) * | 1970-08-10 | 1974-05-29 | ||
| JPS523647B2 (enrdf_load_stackoverflow) * | 1972-10-24 | 1977-01-29 | ||
| US3887411A (en) * | 1973-12-20 | 1975-06-03 | Ford Motor Co | Making a triple density article of silicon nitride |
| GB1522705A (en) * | 1974-11-11 | 1978-08-23 | Asea Ab | Method of manufacturing bodies of silicon nitride |
| US4119689A (en) * | 1977-01-03 | 1978-10-10 | General Electric Company | Sintering of silicon nitride using Be additive |
| DE2800174A1 (de) * | 1978-01-03 | 1979-07-12 | Max Planck Gesellschaft | Verfahren zum sintern von siliciumnitrid-formkoerpern |
-
1982
- 1982-04-16 JP JP1982055268U patent/JPS58158438U/ja active Granted
-
1983
- 1983-04-07 GB GB08309427A patent/GB2120279B/en not_active Expired
- 1983-04-14 KR KR1019830001556A patent/KR840004824A/ko not_active Ceased
- 1983-04-15 DE DE19833313695 patent/DE3313695A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0356042Y2 (enrdf_load_stackoverflow) | 1991-12-16 |
| DE3313695A1 (de) | 1983-10-27 |
| KR840004824A (ko) | 1984-10-24 |
| GB2120279A (en) | 1983-11-30 |
| JPS58158438U (ja) | 1983-10-22 |
| GB2120279B (en) | 1986-09-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |