KR840004824A - 반도체 웨이퍼의 에피택셜 생장장치 - Google Patents

반도체 웨이퍼의 에피택셜 생장장치 Download PDF

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Publication number
KR840004824A
KR840004824A KR1019830001556A KR830001556A KR840004824A KR 840004824 A KR840004824 A KR 840004824A KR 1019830001556 A KR1019830001556 A KR 1019830001556A KR 830001556 A KR830001556 A KR 830001556A KR 840004824 A KR840004824 A KR 840004824A
Authority
KR
South Korea
Prior art keywords
epitaxial growth
high frequency
support
frequency induction
coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019830001556A
Other languages
English (en)
Korean (ko)
Inventor
요시조오(외 2) 고미야마
Original Assignee
히사노 마사노부
도오시바 기까이 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 히사노 마사노부, 도오시바 기까이 가부시기가이샤 filed Critical 히사노 마사노부
Publication of KR840004824A publication Critical patent/KR840004824A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
KR1019830001556A 1982-04-16 1983-04-14 반도체 웨이퍼의 에피택셜 생장장치 Ceased KR840004824A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1982055268U JPS58158438U (ja) 1982-04-16 1982-04-16 エピタキシヤル成長装置のコイル保持装置
JP???55268 1982-04-16

Publications (1)

Publication Number Publication Date
KR840004824A true KR840004824A (ko) 1984-10-24

Family

ID=12993852

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830001556A Ceased KR840004824A (ko) 1982-04-16 1983-04-14 반도체 웨이퍼의 에피택셜 생장장치

Country Status (4)

Country Link
JP (1) JPS58158438U (enrdf_load_stackoverflow)
KR (1) KR840004824A (enrdf_load_stackoverflow)
DE (1) DE3313695A1 (enrdf_load_stackoverflow)
GB (1) GB2120279B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1271233B (it) * 1994-09-30 1997-05-27 Lpe Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati
US6436796B1 (en) 2000-01-31 2002-08-20 Mattson Technology, Inc. Systems and methods for epitaxial processing of a semiconductor substrate

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921091B1 (enrdf_load_stackoverflow) * 1970-08-10 1974-05-29
JPS523647B2 (enrdf_load_stackoverflow) * 1972-10-24 1977-01-29
US3887411A (en) * 1973-12-20 1975-06-03 Ford Motor Co Making a triple density article of silicon nitride
GB1522705A (en) * 1974-11-11 1978-08-23 Asea Ab Method of manufacturing bodies of silicon nitride
US4119689A (en) * 1977-01-03 1978-10-10 General Electric Company Sintering of silicon nitride using Be additive
DE2800174A1 (de) * 1978-01-03 1979-07-12 Max Planck Gesellschaft Verfahren zum sintern von siliciumnitrid-formkoerpern

Also Published As

Publication number Publication date
JPS58158438U (ja) 1983-10-22
GB2120279B (en) 1986-09-10
GB2120279A (en) 1983-11-30
DE3313695A1 (de) 1983-10-27
JPH0356042Y2 (enrdf_load_stackoverflow) 1991-12-16
DE3313695C2 (enrdf_load_stackoverflow) 1987-10-22

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19830414

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Patent event code: PA02012R01D

Patent event date: 19830516

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Patent event code: PA02011R01I

Patent event date: 19830414

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Patent event date: 19860219

Patent event code: PE09021S01D

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Patent event date: 19860429

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Patent event date: 19860219

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I