DE3279141D1 - Monolithically merged field effect transistor and bipolar junction transistor - Google Patents
Monolithically merged field effect transistor and bipolar junction transistorInfo
- Publication number
- DE3279141D1 DE3279141D1 DE8282902605T DE3279141T DE3279141D1 DE 3279141 D1 DE3279141 D1 DE 3279141D1 DE 8282902605 T DE8282902605 T DE 8282902605T DE 3279141 T DE3279141 T DE 3279141T DE 3279141 D1 DE3279141 D1 DE 3279141D1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- transistor
- bipolar junction
- effect transistor
- merged field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/287,497 US4441117A (en) | 1981-07-27 | 1981-07-27 | Monolithically merged field effect transistor and bipolar junction transistor |
PCT/US1982/000997 WO1983000407A1 (en) | 1981-07-27 | 1982-07-20 | Monolithically merged field effect transistor and bipolar junction transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3279141D1 true DE3279141D1 (en) | 1988-11-24 |
Family
ID=23103166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282902605T Expired DE3279141D1 (en) | 1981-07-27 | 1982-07-20 | Monolithically merged field effect transistor and bipolar junction transistor |
Country Status (5)
Country | Link |
---|---|
US (1) | US4441117A (de) |
EP (1) | EP0084558B1 (de) |
JP (1) | JPS58501205A (de) |
DE (1) | DE3279141D1 (de) |
WO (1) | WO1983000407A1 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4546370A (en) * | 1979-02-15 | 1985-10-08 | Texas Instruments Incorporated | Monolithic integration of logic, control and high voltage interface circuitry |
DE3224618A1 (de) * | 1982-07-01 | 1984-01-05 | Siemens AG, 1000 Berlin und 8000 München | Igfet mit ladungstraegerinjektion |
DE3224642A1 (de) * | 1982-07-01 | 1984-01-05 | Siemens AG, 1000 Berlin und 8000 München | Igfet mit injektorzone |
US5333282A (en) * | 1982-09-29 | 1994-07-26 | Hitachi, Ltd. | Semiconductor integrated circuit device with at least one bipolar transistor arranged to provide a direct connection between a plurality of MOSFETs |
EP0104657B1 (de) * | 1982-09-29 | 1989-06-21 | Hitachi, Ltd. | Integrierte Halbleiterschaltungsanordnung |
DE3344428A1 (de) * | 1983-12-08 | 1985-06-20 | Siemens AG, 1000 Berlin und 8000 München | Schaltungsanordnung mit einem fototransistor |
US4783694A (en) * | 1984-03-16 | 1988-11-08 | Motorola Inc. | Integrated bipolar-MOS semiconductor device with common collector and drain |
GB2164790A (en) * | 1984-09-19 | 1986-03-26 | Philips Electronic Associated | Merged bipolar and field effect transistors |
JPS61180472A (ja) * | 1985-02-05 | 1986-08-13 | Mitsubishi Electric Corp | 半導体装置 |
DE3689680T2 (de) * | 1985-09-30 | 1994-06-23 | Toshiba Kawasaki Kk | Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren. |
US4714876A (en) * | 1986-04-14 | 1987-12-22 | Ncr Corporation | Circuit for initiating test modes |
GB2190539A (en) * | 1986-05-16 | 1987-11-18 | Philips Electronic Associated | Semiconductor devices |
IT1213411B (it) * | 1986-12-17 | 1989-12-20 | Sgs Microelettronica Spa | Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione. |
IT1217323B (it) * | 1987-12-22 | 1990-03-22 | Sgs Microelettronica Spa | Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione |
USRE35642E (en) * | 1987-12-22 | 1997-10-28 | Sgs-Thomson Microelectronics, S.R.L. | Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process |
US4967243A (en) * | 1988-07-19 | 1990-10-30 | General Electric Company | Power transistor structure with high speed integral antiparallel Schottky diode |
US4891746A (en) * | 1988-12-05 | 1990-01-02 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of optimizing the efficiency of a high frequency zero voltage switching resonant power inverter for extended line and load range |
JP2549726B2 (ja) * | 1989-01-30 | 1996-10-30 | 株式会社東芝 | 半導体集積回路とその製造方法 |
JPH02312280A (ja) * | 1989-05-26 | 1990-12-27 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ |
US4999518A (en) * | 1989-12-08 | 1991-03-12 | International Business Machines Corp. | MOS switching circuit having gate enhanced lateral bipolar transistor |
US5723988A (en) * | 1993-10-20 | 1998-03-03 | Texas Instruments Incorporated | CMOS with parasitic bipolar transistor |
US5843814A (en) * | 1996-02-15 | 1998-12-01 | Micron Technology, Inc. | Method of forming BiCMOS circuitry |
TW461080B (en) * | 1999-04-26 | 2001-10-21 | Sony Corp | Semiconductor memory cell |
WO2004106891A2 (en) | 2003-05-22 | 2004-12-09 | University Of Hawaii | Ultrasensitive biochemical sensor |
US20050205891A1 (en) * | 2004-03-18 | 2005-09-22 | Holm-Kennedy James W | Distributed channel bipolar devices and architectures |
CN101874349A (zh) * | 2008-03-27 | 2010-10-27 | 艾格瑞系统有限公司 | 耐高压输入/输出接口电路 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3461360A (en) * | 1965-06-30 | 1969-08-12 | Ibm | Semiconductor devices with cup-shaped regions |
JPS5023792A (de) * | 1973-06-30 | 1975-03-14 | ||
JPS5268382A (en) * | 1975-12-05 | 1977-06-07 | Hitachi Ltd | Semiconductor circuit unit |
JPS52105783A (en) * | 1976-03-03 | 1977-09-05 | Hitachi Ltd | Semicondcutor unit |
JPS5325375A (en) * | 1976-07-31 | 1978-03-09 | Nippon Gakki Seizo Kk | Semiconductor integrated circuit devi ce |
FR2422258A1 (fr) * | 1978-01-19 | 1979-11-02 | Radiotechnique Compelec | Dispositif semiconducteur monolithique a transistors de types mos et bipolaire |
US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
FR2458950A1 (fr) * | 1979-06-12 | 1981-01-02 | Ibm France | Dispositif de commutation et son application a une alimentation de puissance du type commute |
US4344081A (en) * | 1980-04-14 | 1982-08-10 | Supertex, Inc. | Combined DMOS and a vertical bipolar transistor device and fabrication method therefor |
US4402003A (en) * | 1981-01-12 | 1983-08-30 | Supertex, Inc. | Composite MOS/bipolar power device |
-
1981
- 1981-07-27 US US06/287,497 patent/US4441117A/en not_active Expired - Lifetime
-
1982
- 1982-07-20 WO PCT/US1982/000997 patent/WO1983000407A1/en active IP Right Grant
- 1982-07-20 EP EP82902605A patent/EP0084558B1/de not_active Expired
- 1982-07-20 DE DE8282902605T patent/DE3279141D1/de not_active Expired
- 1982-07-20 JP JP57502603A patent/JPS58501205A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
US4441117A (en) | 1984-04-03 |
EP0084558B1 (de) | 1988-10-19 |
JPS58501205A (ja) | 1983-07-21 |
EP0084558A1 (de) | 1983-08-03 |
JPH0371773B2 (de) | 1991-11-14 |
EP0084558A4 (de) | 1984-10-11 |
WO1983000407A1 (en) | 1983-02-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8330 | Complete renunciation |