JPS52105783A - Semicondcutor unit - Google Patents

Semicondcutor unit

Info

Publication number
JPS52105783A
JPS52105783A JP2210276A JP2210276A JPS52105783A JP S52105783 A JPS52105783 A JP S52105783A JP 2210276 A JP2210276 A JP 2210276A JP 2210276 A JP2210276 A JP 2210276A JP S52105783 A JPS52105783 A JP S52105783A
Authority
JP
Japan
Prior art keywords
unit
semicondcutor
drain
equipping
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2210276A
Other languages
Japanese (ja)
Inventor
Isao Yoshida
Takeaki Okabe
Shikayuki Ochi
Yukio Shirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2210276A priority Critical patent/JPS52105783A/en
Publication of JPS52105783A publication Critical patent/JPS52105783A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To protect the MOSFET by equipping a unit, whose voltage voltage withstanding differs from that of drain, between the drain electrode and the source electrode or between the basic board.
JP2210276A 1976-03-03 1976-03-03 Semicondcutor unit Pending JPS52105783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2210276A JPS52105783A (en) 1976-03-03 1976-03-03 Semicondcutor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2210276A JPS52105783A (en) 1976-03-03 1976-03-03 Semicondcutor unit

Publications (1)

Publication Number Publication Date
JPS52105783A true JPS52105783A (en) 1977-09-05

Family

ID=12073513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2210276A Pending JPS52105783A (en) 1976-03-03 1976-03-03 Semicondcutor unit

Country Status (1)

Country Link
JP (1) JPS52105783A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58501205A (en) * 1981-07-27 1983-07-21 インタ−シル，インコ−ポレ−テツド Monolithically integrated FET and bipolar junction transistors
JPS58207672A (en) * 1982-04-23 1983-12-03 サ−トル・エレクトロニク・オルロジユ−ル・ソシエテ・アノニム Semiconductor device
EP0161446A2 (en) * 1984-03-31 1985-11-21 Kabushiki Kaisha Toshiba Semiconductor integrated circuit comprising a protective transistor and a MOS transistor with an LDD structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58501205A (en) * 1981-07-27 1983-07-21 インタ−シル，インコ−ポレ−テツド Monolithically integrated FET and bipolar junction transistors
JPS58207672A (en) * 1982-04-23 1983-12-03 サ−トル・エレクトロニク・オルロジユ−ル・ソシエテ・アノニム Semiconductor device
EP0161446A2 (en) * 1984-03-31 1985-11-21 Kabushiki Kaisha Toshiba Semiconductor integrated circuit comprising a protective transistor and a MOS transistor with an LDD structure

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