JPS52105783A - Semicondcutor unit - Google Patents
Semicondcutor unitInfo
- Publication number
- JPS52105783A JPS52105783A JP2210276A JP2210276A JPS52105783A JP S52105783 A JPS52105783 A JP S52105783A JP 2210276 A JP2210276 A JP 2210276A JP 2210276 A JP2210276 A JP 2210276A JP S52105783 A JPS52105783 A JP S52105783A
- Authority
- JP
- Japan
- Prior art keywords
- unit
- semicondcutor
- drain
- equipping
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To protect the MOSFET by equipping a unit, whose voltage voltage withstanding differs from that of drain, between the drain electrode and the source electrode or between the basic board.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2210276A JPS52105783A (en) | 1976-03-03 | 1976-03-03 | Semicondcutor unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2210276A JPS52105783A (en) | 1976-03-03 | 1976-03-03 | Semicondcutor unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52105783A true JPS52105783A (en) | 1977-09-05 |
Family
ID=12073513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2210276A Pending JPS52105783A (en) | 1976-03-03 | 1976-03-03 | Semicondcutor unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52105783A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58501205A (en) * | 1981-07-27 | 1983-07-21 | インタ−シル,インコ−ポレ−テツド | Monolithically integrated FET and bipolar junction transistors |
JPS58207672A (en) * | 1982-04-23 | 1983-12-03 | サ−トル・エレクトロニク・オルロジユ−ル・ソシエテ・アノニム | Semiconductor device |
EP0161446A2 (en) * | 1984-03-31 | 1985-11-21 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit comprising a protective transistor and a MOS transistor with an LDD structure |
-
1976
- 1976-03-03 JP JP2210276A patent/JPS52105783A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58501205A (en) * | 1981-07-27 | 1983-07-21 | インタ−シル,インコ−ポレ−テツド | Monolithically integrated FET and bipolar junction transistors |
JPS58207672A (en) * | 1982-04-23 | 1983-12-03 | サ−トル・エレクトロニク・オルロジユ−ル・ソシエテ・アノニム | Semiconductor device |
EP0161446A2 (en) * | 1984-03-31 | 1985-11-21 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit comprising a protective transistor and a MOS transistor with an LDD structure |
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