DE3276889D1 - Method of manufacturing photosensors - Google Patents
Method of manufacturing photosensorsInfo
- Publication number
- DE3276889D1 DE3276889D1 DE8282301284T DE3276889T DE3276889D1 DE 3276889 D1 DE3276889 D1 DE 3276889D1 DE 8282301284 T DE8282301284 T DE 8282301284T DE 3276889 T DE3276889 T DE 3276889T DE 3276889 D1 DE3276889 D1 DE 3276889D1
- Authority
- DE
- Germany
- Prior art keywords
- photosensors
- manufacturing
- manufacturing photosensors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56035313A JPS57152174A (en) | 1981-03-13 | 1981-03-13 | Manufacture of light receiving device |
JP56167208A JPS5868965A (ja) | 1981-10-21 | 1981-10-21 | 受光素子の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3276889D1 true DE3276889D1 (en) | 1987-09-03 |
Family
ID=26374281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282301284T Expired DE3276889D1 (en) | 1981-03-13 | 1982-03-12 | Method of manufacturing photosensors |
Country Status (5)
Country | Link |
---|---|
US (1) | US4412900A (de) |
EP (1) | EP0060699B1 (de) |
KR (1) | KR860000160B1 (de) |
CA (1) | CA1168739A (de) |
DE (1) | DE3276889D1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4417092A (en) * | 1981-03-16 | 1983-11-22 | Exxon Research And Engineering Co. | Sputtered pin amorphous silicon semi-conductor device and method therefor |
JPS60161664A (ja) * | 1984-02-01 | 1985-08-23 | Sharp Corp | 密着型二次元画像読取装置 |
US4948741A (en) * | 1986-07-22 | 1990-08-14 | The United States Of America As Represented By The United States Department Of Energy | Polysilicon photoconductor for integrated circuits |
DE3717727A1 (de) * | 1987-05-26 | 1988-12-08 | Licentia Gmbh | Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellung |
US4842705A (en) * | 1987-06-04 | 1989-06-27 | Siemens Aktiengesellschaft | Method for manufacturing transparent conductive indium-tin oxide layers |
US6022458A (en) * | 1992-12-07 | 2000-02-08 | Canon Kabushiki Kaisha | Method of production of a semiconductor substrate |
US6680489B1 (en) | 1995-12-20 | 2004-01-20 | Advanced Technology Materials, Inc. | Amorphous silicon carbide thin film coating |
US6031250A (en) * | 1995-12-20 | 2000-02-29 | Advanced Technology Materials, Inc. | Integrated circuit devices and methods employing amorphous silicon carbide resistor materials |
KR100344844B1 (ko) * | 1998-07-07 | 2002-11-18 | 엘지.필립스 엘시디 주식회사 | 액정표시소자및그제조방법 |
US6693317B2 (en) * | 2001-07-13 | 2004-02-17 | Taiwan Semiconductor Manufacturing Company | Optical sensor by using tunneling diode |
JP2003060207A (ja) * | 2001-08-09 | 2003-02-28 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6686595B2 (en) | 2002-06-26 | 2004-02-03 | Semequip Inc. | Electron impact ion source |
KR100797138B1 (ko) * | 2002-06-26 | 2008-01-22 | 세미이큅, 인코포레이티드 | 상보형 금속 산화막 반도체 디바이스, 및 금속 산화막 반도체 디바이스와 상보형 금속 산화막 반도체 디바이스를 형성하는 방법 |
US7361406B2 (en) * | 2003-04-29 | 2008-04-22 | Qi Wang | Ultra-high current density thin-film Si diode |
US7791047B2 (en) * | 2003-12-12 | 2010-09-07 | Semequip, Inc. | Method and apparatus for extracting ions from an ion source for use in ion implantation |
JP4646920B2 (ja) | 2003-12-12 | 2011-03-09 | セメクイップ, インコーポレイテッド | イオン注入における設備の動作可能時間を延長するための方法および装置 |
KR100541708B1 (ko) | 2004-02-05 | 2006-01-10 | 매그나칩 반도체 유한회사 | 이미지 센서 및 이의 제조 방법 |
FR2880990B1 (fr) * | 2005-01-14 | 2007-04-27 | St Microelectronics Sa | Dispositif semi-conducteur optique a diodes photo-sensibles et procede de fabrication d'un tel dispositif. |
WO2009039382A1 (en) | 2007-09-21 | 2009-03-26 | Semequip. Inc. | Method for extending equipment uptime in ion implantation |
JP2010073819A (ja) * | 2008-09-17 | 2010-04-02 | Canon Inc | 光電変換装置及び撮像システム |
FR2946335B1 (fr) * | 2009-06-05 | 2011-09-02 | Saint Gobain | Procede de depot de couche mince et produit obtenu. |
CN102044544B (zh) * | 2009-10-13 | 2012-12-05 | 中芯国际集成电路制造(上海)有限公司 | 具有浮动栅的非易失性存储器及其形成方法 |
KR101330270B1 (ko) * | 2010-01-29 | 2013-11-15 | 이화여자대학교 산학협력단 | 소비전력 및 암전류가 감소된 실리콘 광전자 증배관 |
EP2765615B1 (de) * | 2012-04-25 | 2018-05-23 | Kaneka Corporation | Solarzelle, herstellungsverfahren für die solarzelle und solarzellenmodul |
KR102506156B1 (ko) * | 2020-11-13 | 2023-03-06 | 한국광기술원 | 구멍을 포함하는 태양전지 모듈 및 그를 제조하는 방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3798146A (en) * | 1973-06-06 | 1974-03-19 | Shatterproof Glass Corp | Method of making a transparent article having reduced radiation transmittance |
US3979240A (en) * | 1975-05-02 | 1976-09-07 | General Electric Company | Method of etching indium tin oxide |
CA1078078A (en) * | 1976-03-22 | 1980-05-20 | David E. Carlson | Schottky barrier semiconductor device and method of making same |
JPS53140048A (en) * | 1977-05-13 | 1978-12-06 | Hitachi Ltd | Light receiving element |
JPS5412285A (en) * | 1977-06-27 | 1979-01-29 | Hitachi Ltd | Photo detector |
US4265991A (en) * | 1977-12-22 | 1981-05-05 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and process for production thereof |
US4236829A (en) * | 1978-01-31 | 1980-12-02 | Matsushita Electric Industrial Co., Ltd. | Solid-state image sensor |
JPS56157075A (en) * | 1980-05-09 | 1981-12-04 | Hitachi Ltd | Photoelectric transducing device |
US4419696A (en) * | 1980-12-10 | 1983-12-06 | Fuji Xerox Co., Ltd. | Elongate thin-film reader |
-
1982
- 1982-03-11 US US06/357,076 patent/US4412900A/en not_active Expired - Lifetime
- 1982-03-12 EP EP82301284A patent/EP0060699B1/de not_active Expired
- 1982-03-12 CA CA000398275A patent/CA1168739A/en not_active Expired
- 1982-03-12 DE DE8282301284T patent/DE3276889D1/de not_active Expired
- 1982-03-13 KR KR8201078A patent/KR860000160B1/ko active
Also Published As
Publication number | Publication date |
---|---|
EP0060699B1 (de) | 1987-07-29 |
CA1168739A (en) | 1984-06-05 |
US4412900A (en) | 1983-11-01 |
EP0060699A3 (en) | 1983-10-19 |
KR860000160B1 (ko) | 1986-02-27 |
EP0060699A2 (de) | 1982-09-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT. GROENING, H., DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN |