FR2880990B1 - Dispositif semi-conducteur optique a diodes photo-sensibles et procede de fabrication d'un tel dispositif. - Google Patents
Dispositif semi-conducteur optique a diodes photo-sensibles et procede de fabrication d'un tel dispositif.Info
- Publication number
- FR2880990B1 FR2880990B1 FR0500408A FR0500408A FR2880990B1 FR 2880990 B1 FR2880990 B1 FR 2880990B1 FR 0500408 A FR0500408 A FR 0500408A FR 0500408 A FR0500408 A FR 0500408A FR 2880990 B1 FR2880990 B1 FR 2880990B1
- Authority
- FR
- France
- Prior art keywords
- photo
- manufacturing
- optical semiconductor
- semiconductor device
- sensitive diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0500408A FR2880990B1 (fr) | 2005-01-14 | 2005-01-14 | Dispositif semi-conducteur optique a diodes photo-sensibles et procede de fabrication d'un tel dispositif. |
| US11/335,908 US7709916B2 (en) | 2005-01-14 | 2006-01-13 | Optical semiconductor device having photosensitive diodes and process for fabricating such a device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0500408A FR2880990B1 (fr) | 2005-01-14 | 2005-01-14 | Dispositif semi-conducteur optique a diodes photo-sensibles et procede de fabrication d'un tel dispositif. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2880990A1 FR2880990A1 (fr) | 2006-07-21 |
| FR2880990B1 true FR2880990B1 (fr) | 2007-04-27 |
Family
ID=35044760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0500408A Expired - Fee Related FR2880990B1 (fr) | 2005-01-14 | 2005-01-14 | Dispositif semi-conducteur optique a diodes photo-sensibles et procede de fabrication d'un tel dispositif. |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7709916B2 (fr) |
| FR (1) | FR2880990B1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4693827B2 (ja) * | 2007-09-20 | 2011-06-01 | 株式会社東芝 | 半導体装置とその製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4412900A (en) * | 1981-03-13 | 1983-11-01 | Hitachi, Ltd. | Method of manufacturing photosensors |
| JPS5956765A (ja) * | 1982-09-27 | 1984-04-02 | Toshiba Corp | 固体撮像素子の外部電圧印加電極 |
| JPS60258959A (ja) * | 1984-06-05 | 1985-12-20 | Toshiba Corp | カラ−固体撮像装置の製造方法 |
| JPS61148870A (ja) * | 1984-12-22 | 1986-07-07 | Seiko Epson Corp | 固体撮像装置 |
| JPH07112052B2 (ja) * | 1986-03-20 | 1995-11-29 | セイコーエプソン株式会社 | 光電変換装置の製造方法 |
| US6325977B1 (en) * | 2000-01-18 | 2001-12-04 | Agilent Technologies, Inc. | Optical detection system for the detection of organic molecules |
| WO2002093653A2 (fr) * | 2001-05-16 | 2002-11-21 | Stmicroelectronics N.V. | Composant optoelectronique a structure de contact conductrice |
| US6964916B2 (en) * | 2003-06-06 | 2005-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor fabrication method and structure |
| NO321381B1 (no) * | 2004-07-22 | 2006-05-02 | Thin Film Electronics Asa | Elektrisk viaforbindelse og tilknyttet kontaktanordning samt fremgangsmate til deres fremstilling |
-
2005
- 2005-01-14 FR FR0500408A patent/FR2880990B1/fr not_active Expired - Fee Related
-
2006
- 2006-01-13 US US11/335,908 patent/US7709916B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US7709916B2 (en) | 2010-05-04 |
| FR2880990A1 (fr) | 2006-07-21 |
| US20090140363A1 (en) | 2009-06-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20120928 |