DE3267996D1 - Plastic encapsulated semiconductor device and method for manufacturing the same - Google Patents

Plastic encapsulated semiconductor device and method for manufacturing the same

Info

Publication number
DE3267996D1
DE3267996D1 DE8282104364T DE3267996T DE3267996D1 DE 3267996 D1 DE3267996 D1 DE 3267996D1 DE 8282104364 T DE8282104364 T DE 8282104364T DE 3267996 T DE3267996 T DE 3267996T DE 3267996 D1 DE3267996 D1 DE 3267996D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
same
encapsulated semiconductor
plastic encapsulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282104364T
Other languages
German (de)
English (en)
Inventor
Masami Yokozawa
Isao Kanai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of DE3267996D1 publication Critical patent/DE3267996D1/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/016Manufacture or treatment using moulds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/481Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
DE8282104364T 1981-05-18 1982-05-18 Plastic encapsulated semiconductor device and method for manufacturing the same Expired DE3267996D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56075444A JPS57188858A (en) 1981-05-18 1981-05-18 Plastic molded type semiconductor device

Publications (1)

Publication Number Publication Date
DE3267996D1 true DE3267996D1 (en) 1986-01-30

Family

ID=13576421

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282104364T Expired DE3267996D1 (en) 1981-05-18 1982-05-18 Plastic encapsulated semiconductor device and method for manufacturing the same

Country Status (5)

Country Link
US (1) US4503452A (enExample)
EP (1) EP0066188B1 (enExample)
JP (1) JPS57188858A (enExample)
CA (1) CA1180469A (enExample)
DE (1) DE3267996D1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59130449A (ja) * 1983-01-17 1984-07-27 Nec Corp 絶縁型半導体素子用リードフレーム
JPS59135753A (ja) * 1983-01-25 1984-08-04 Toshiba Corp 半導体装置とその製造方法
JPS60128646A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 絶縁型パワートランジスタの製造方法
JPS60128645A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 絶縁型パワートランジスタの製造方法
JPS60229352A (ja) * 1984-04-26 1985-11-14 Fuji Electric Co Ltd 樹脂封止形半導体装置および樹脂封止方法
DE3535605C1 (de) * 1985-10-05 1986-12-04 Telefunken electronic GmbH, 7100 Heilbronn Halbleiteranordnung
EP0257681A3 (en) * 1986-08-27 1990-02-07 STMicroelectronics S.r.l. Method for manufacturing plastic encapsulated semiconductor devices and devices obtained thereby
EP0264780B1 (en) * 1986-10-15 1992-03-11 Sanyo Electric Co., Ltd. Hybrid integrated circuit device capable of being inserted into socket
JP2602234B2 (ja) * 1987-07-10 1997-04-23 株式会社日立製作所 樹脂封止半導体装置
EP0401211B1 (de) * 1988-02-20 1993-05-19 Deutsche ITT Industries GmbH Halbleiterbauelement, herstellungsverfahren, vorrichtung und montageplatz
EP0336173A3 (en) * 1988-04-05 1990-04-25 Siemens Aktiengesellschaft Molded component package isolating interior substrate by recesses containing exposed breakoffs
US5011256A (en) * 1988-10-28 1991-04-30 E. I. Du Pont De Nemours And Company Package for an opto-electronic component
US5521427A (en) * 1992-12-18 1996-05-28 Lsi Logic Corporation Printed wiring board mounted semiconductor device having leadframe with alignment feature
US5886400A (en) * 1995-08-31 1999-03-23 Motorola, Inc. Semiconductor device having an insulating layer and method for making
US5977630A (en) * 1997-08-15 1999-11-02 International Rectifier Corp. Plural semiconductor die housed in common package with split heat sink
US6255722B1 (en) * 1998-06-11 2001-07-03 International Rectifier Corp. High current capacity semiconductor device housing
USD573116S1 (en) * 2006-10-19 2008-07-15 Vishay General Semiconductor Llc Bridge rectifier package with heat sink
JP2010073841A (ja) * 2008-09-18 2010-04-02 Sony Corp 光学パッケージ素子、表示装置、および電子機器
DE102013220880B4 (de) * 2013-10-15 2016-08-18 Infineon Technologies Ag Elektronisches Halbleitergehäuse mit einer elektrisch isolierenden, thermischen Schnittstellenstruktur auf einer Diskontinuität einer Verkapselungsstruktur sowie ein Herstellungsverfahren dafür und eine elektronische Anordung dies aufweisend
DE102015118245B4 (de) * 2015-10-26 2024-10-10 Infineon Technologies Austria Ag Elektronische Komponente mit einem thermischen Schnittstellenmaterial, Herstellungsverfahren für eine elektronische Komponente, Wärmeabfuhrkörper mit einem thermischen Schnittstellenmaterial und thermisches Schnittstellenmaterial
JP1646470S (enExample) * 2019-05-14 2019-11-25

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3716764A (en) * 1963-12-16 1973-02-13 Texas Instruments Inc Process for encapsulating electronic components in plastic
NL6903229A (enExample) * 1969-03-01 1970-09-03
US3611250A (en) * 1969-09-10 1971-10-05 Amp Inc Integrated circuit module and assembly
US3793709A (en) * 1972-04-24 1974-02-26 Texas Instruments Inc Process for making a plastic-encapsulated semiconductor device
IT993429B (it) * 1973-09-26 1975-09-30 Sgs Ates Componenti Perfezionamento di una cassa per dispositivo a semiconduttori
JPS51137376A (en) * 1975-05-22 1976-11-27 Mitsubishi Electric Corp Manufacturing method for plastic seal type semi conductor
JPS5380969A (en) * 1976-12-27 1978-07-17 Hitachi Ltd Manufacture of resin shield type semiconductor device and lead frame used for the said process
JPS54111766A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Coupling construction of lead and heat sink in semiconductor device
JPS54159177A (en) * 1978-06-07 1979-12-15 Hitachi Ltd Resin sealed semiconductor device
US4224637A (en) * 1978-08-10 1980-09-23 Minnesota Mining And Manufacturing Company Leaded mounting and connector unit for an electronic device
JPS5563854A (en) * 1978-11-08 1980-05-14 Nec Kyushu Ltd Method of manufacturing semiconductor device
JPS5587468A (en) * 1978-12-25 1980-07-02 Nec Corp Lead frame
JPS5596663A (en) * 1979-01-16 1980-07-23 Nec Corp Method of fabricating semiconductor device
JPS55108755A (en) * 1979-02-14 1980-08-21 Nec Corp Resin seal type semiconductor device
JPS5619646A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Resin sealing type semiconductor device
JPS5662344A (en) * 1979-10-26 1981-05-28 Hitachi Ltd Resin sealed semiconductor device

Also Published As

Publication number Publication date
JPS57188858A (en) 1982-11-19
JPS6227750B2 (enExample) 1987-06-16
EP0066188A1 (en) 1982-12-08
US4503452A (en) 1985-03-05
CA1180469A (en) 1985-01-02
EP0066188B1 (en) 1985-12-18

Similar Documents

Publication Publication Date Title
DE3175125D1 (en) Semiconductor memory device and method for manufacturing the same
DE3278871D1 (en) Stacked semiconductor device and method for manufacturing the device
EP0051488A3 (en) Semiconductor device and method for manufacturing the same
EP0187278A3 (en) Semiconductor device and method for manufacturing the same
DE3270561D1 (en) A method for manufacturing a plastic encapsulated semiconductor device
DE3174468D1 (en) Semiconductor device and method of manufacturing the same
DE3267996D1 (en) Plastic encapsulated semiconductor device and method for manufacturing the same
DE3473384D1 (en) Semiconductor device and a method of manufacturing the same
EP0085988A3 (en) Semiconductor memory and method for fabricating the same
DE3265339D1 (en) Method for manufacturing semiconductor device
EP0111899A3 (en) Semiconductor device and method of manufacturing the same
EP0174185A3 (en) Semiconductor device and manufacturing method thereof
DE3061383D1 (en) Semiconductor device and method for manufacturing the same
SG47613A1 (en) Semiconductor device having an improved lead arrangement and method for manufacturing the same
DE3463317D1 (en) Method of manufacturing a semiconductor device and semiconductor device manufactured by means of the method
GB8401123D0 (en) Fabricating semiconductor device
EP0187596A3 (en) Semiconductor memory device and method for producing the same
DE3279378D1 (en) Package for semiconductor device and method for its production
EP0361283A3 (en) Resin-sealed type semiconductor device and method for manufacturing the same
EP0130847A3 (en) Semiconductor device manufacturing method
DE3377438D1 (en) Resin-molded semiconductor devices and a process for manufacturing the same
EP0281140A3 (en) Semiconductor memory device and method for manufacturing the same
DE3264580D1 (en) Semiconductor device and method of manufacturing the same
GB2104290B (en) Semiconductor device and method for manufacturing the same
GB2104722B (en) Mos semiconductor device and method of manufacturing the same

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA,