DE3238133C2 - - Google Patents
Info
- Publication number
- DE3238133C2 DE3238133C2 DE3238133A DE3238133A DE3238133C2 DE 3238133 C2 DE3238133 C2 DE 3238133C2 DE 3238133 A DE3238133 A DE 3238133A DE 3238133 A DE3238133 A DE 3238133A DE 3238133 C2 DE3238133 C2 DE 3238133C2
- Authority
- DE
- Germany
- Prior art keywords
- gate electrode
- region
- channel
- voltage
- channel region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 18
- 238000009413 insulation Methods 0.000 claims 3
- 238000007599 discharging Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 description 19
- 239000007924 injection Substances 0.000 description 19
- 230000015654 memory Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000003860 storage Methods 0.000 description 9
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56163583A JPS5864068A (ja) | 1981-10-14 | 1981-10-14 | 不揮発性半導体メモリの書き込み方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3238133A1 DE3238133A1 (de) | 1983-04-28 |
| DE3238133C2 true DE3238133C2 (en, 2012) | 1990-03-22 |
Family
ID=15776664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823238133 Granted DE3238133A1 (de) | 1981-10-14 | 1982-10-14 | Nichtfluechtiger halbleiterspeicher |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4616340A (en, 2012) |
| JP (1) | JPS5864068A (en, 2012) |
| DE (1) | DE3238133A1 (en, 2012) |
| GB (1) | GB2107519B (en, 2012) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0123249B1 (en) * | 1983-04-18 | 1990-08-01 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a floating gate |
| NL8304256A (nl) * | 1983-12-09 | 1985-07-01 | Philips Nv | Halfgeleiderinrichting. |
| JPS60136995A (ja) * | 1983-12-26 | 1985-07-20 | Seiko Instr & Electronics Ltd | 不揮発性ｒａｍ |
| US4878101A (en) * | 1986-12-29 | 1989-10-31 | Ning Hsieh | Single transistor cell for electrically-erasable programmable read-only memory and array thereof |
| US4852062A (en) * | 1987-09-28 | 1989-07-25 | Motorola, Inc. | EPROM device using asymmetrical transistor characteristics |
| US4951103A (en) * | 1988-06-03 | 1990-08-21 | Texas Instruments, Incorporated | Fast, trench isolated, planar flash EEPROMS with silicided bitlines |
| US5020030A (en) * | 1988-10-31 | 1991-05-28 | Huber Robert J | Nonvolatile SNOS memory cell with induced capacitor |
| DE69019872T2 (de) * | 1989-03-31 | 1996-02-22 | Philips Electronics Nv | Elektrisch programmierbare Halbleiterspeicher. |
| US5182452A (en) * | 1989-07-17 | 1993-01-26 | Matsushita Electric Industrial Co. Ltd. | Method for determining the presence of thin insulating films |
| US5215934A (en) * | 1989-12-21 | 1993-06-01 | Tzeng Jyh Cherng J | Process for reducing program disturbance in eeprom arrays |
| EP0495492B1 (en) * | 1991-01-17 | 1999-04-14 | Texas Instruments Incorporated | Non-volatile memory cell structure and process for forming same |
| US5338952A (en) * | 1991-06-07 | 1994-08-16 | Sharp Kabushiki Kaisha | Non-volatile memory |
| US5274588A (en) * | 1991-07-25 | 1993-12-28 | Texas Instruments Incorporated | Split-gate cell for an EEPROM |
| US5291439A (en) * | 1991-09-12 | 1994-03-01 | International Business Machines Corporation | Semiconductor memory cell and memory array with inversion layer |
| US5338954A (en) * | 1991-10-31 | 1994-08-16 | Rohm Co., Ltd. | Semiconductor memory device having an insulating film and a trap film joined in a channel region |
| US7071060B1 (en) | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
| US5918137A (en) * | 1998-04-27 | 1999-06-29 | Spectrian, Inc. | MOS transistor with shield coplanar with gate electrode |
| AU2002340793A1 (en) * | 2001-05-07 | 2002-11-18 | Coatue Corporation | Molecular memory device |
| KR100895901B1 (ko) * | 2001-05-07 | 2009-05-04 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | 메모리 효과를 갖는 스위치 요소 |
| US6844608B2 (en) | 2001-05-07 | 2005-01-18 | Advanced Micro Devices, Inc. | Reversible field-programmable electric interconnects |
| KR100900080B1 (ko) * | 2001-05-07 | 2009-06-01 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | 자기 조립형 폴리머 막을 구비한 메모리 디바이스 및 그제조 방법 |
| US6873540B2 (en) * | 2001-05-07 | 2005-03-29 | Advanced Micro Devices, Inc. | Molecular memory cell |
| US6627944B2 (en) | 2001-05-07 | 2003-09-30 | Advanced Micro Devices, Inc. | Floating gate memory device using composite molecular material |
| US6858481B2 (en) * | 2001-08-13 | 2005-02-22 | Advanced Micro Devices, Inc. | Memory device with active and passive layers |
| US6992323B2 (en) | 2001-08-13 | 2006-01-31 | Advanced Micro Devices, Inc. | Memory cell |
| US6806526B2 (en) | 2001-08-13 | 2004-10-19 | Advanced Micro Devices, Inc. | Memory device |
| US6838720B2 (en) * | 2001-08-13 | 2005-01-04 | Advanced Micro Devices, Inc. | Memory device with active passive layers |
| US6768157B2 (en) | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
| KR100433407B1 (ko) * | 2002-02-06 | 2004-05-31 | 삼성광주전자 주식회사 | 업라이트형 진공청소기 |
| US7012276B2 (en) * | 2002-09-17 | 2006-03-14 | Advanced Micro Devices, Inc. | Organic thin film Zener diodes |
| TW577194B (en) * | 2002-11-08 | 2004-02-21 | Endpoints Technology Corp | Digital adjustable chip oscillator |
| JP2006032950A (ja) * | 2004-07-12 | 2006-02-02 | Samsung Electronics Co Ltd | メモリ素子及びその形成方法 |
| KR100591768B1 (ko) * | 2004-07-12 | 2006-06-26 | 삼성전자주식회사 | 메모리 소자들 및 그 형성 방법들 |
| US6980471B1 (en) * | 2004-12-23 | 2005-12-27 | Sandisk Corporation | Substrate electron injection techniques for programming non-volatile charge storage memory cells |
| DE102017130213B4 (de) * | 2017-12-15 | 2021-10-21 | Infineon Technologies Ag | Planarer feldeffekttransistor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2445137C3 (de) * | 1974-09-20 | 1981-02-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
| AT365000B (de) * | 1974-09-20 | 1981-11-25 | Siemens Ag | N-kanal-speicher-fet |
| US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
| JPS5456701A (en) * | 1977-10-14 | 1979-05-08 | Sanyo Electric Co Ltd | Preset receiving device |
| US4328565A (en) * | 1980-04-07 | 1982-05-04 | Eliyahou Harari | Non-volatile eprom with increased efficiency |
| IT1209227B (it) * | 1980-06-04 | 1989-07-16 | Sgs Microelettronica Spa | Cella di memoria non volatile a 'gate' flottante elettricamente alterabile. |
| US4380057A (en) * | 1980-10-27 | 1983-04-12 | International Business Machines Corporation | Electrically alterable double dense memory |
| JPS57141969A (en) * | 1981-02-27 | 1982-09-02 | Toshiba Corp | Nonvolatile semiconductor memory |
-
1981
- 1981-10-14 JP JP56163583A patent/JPS5864068A/ja active Granted
-
1982
- 1982-09-30 US US06/431,304 patent/US4616340A/en not_active Expired - Lifetime
- 1982-10-13 GB GB08229197A patent/GB2107519B/en not_active Expired
- 1982-10-14 DE DE19823238133 patent/DE3238133A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4616340A (en) | 1986-10-07 |
| GB2107519A (en) | 1983-04-27 |
| JPH0258788B2 (en, 2012) | 1990-12-10 |
| DE3238133A1 (de) | 1983-04-28 |
| JPS5864068A (ja) | 1983-04-16 |
| GB2107519B (en) | 1985-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8127 | New person/name/address of the applicant |
Owner name: AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY, TOKIO |
|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |