DE3219573C2 - Elektronenstrahlunterbrecher - Google Patents

Elektronenstrahlunterbrecher

Info

Publication number
DE3219573C2
DE3219573C2 DE3219573A DE3219573A DE3219573C2 DE 3219573 C2 DE3219573 C2 DE 3219573C2 DE 3219573 A DE3219573 A DE 3219573A DE 3219573 A DE3219573 A DE 3219573A DE 3219573 C2 DE3219573 C2 DE 3219573C2
Authority
DE
Germany
Prior art keywords
electron
electron beam
image plane
plates
cutting edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3219573A
Other languages
German (de)
English (en)
Other versions
DE3219573A1 (de
Inventor
Jack D. Los Altos Calif. Foster
Wayne C. Mountain View Calif. Haase
John Palo Alto Calif. Kelley
Huei Pei San Jose Calif. Kuo
Bernard M. Los Altos Hills Calif. Oliver
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE3219573A1 publication Critical patent/DE3219573A1/de
Application granted granted Critical
Publication of DE3219573C2 publication Critical patent/DE3219573C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
DE3219573A 1981-06-02 1982-05-25 Elektronenstrahlunterbrecher Expired DE3219573C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/269,170 US4445041A (en) 1981-06-02 1981-06-02 Electron beam blanker

Publications (2)

Publication Number Publication Date
DE3219573A1 DE3219573A1 (de) 1983-03-10
DE3219573C2 true DE3219573C2 (de) 1986-12-11

Family

ID=23026103

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3219573A Expired DE3219573C2 (de) 1981-06-02 1982-05-25 Elektronenstrahlunterbrecher

Country Status (4)

Country Link
US (1) US4445041A (OSRAM)
JP (2) JPS58127A (OSRAM)
DE (1) DE3219573C2 (OSRAM)
GB (1) GB2099626B (OSRAM)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514896A (en) * 1981-03-25 1985-05-07 At&T Bell Laboratories Method of forming current confinement channels in semiconductor devices
GB2139411B (en) * 1983-05-05 1987-01-07 Cambridge Instr Ltd Charged particle deflection
JPS60112236A (ja) * 1983-11-21 1985-06-18 Hitachi Ltd パルスビ−ム発生装置
DE8336881U1 (de) 1983-12-22 1984-07-26 Rose, Harald, Prof.-Dr., 6100 Darmstadt Korpuskularstrahl-austastvorrichtung
JPS6132422A (ja) * 1984-07-24 1986-02-15 Hitachi Ltd 電子線描画装置
JPS6251218A (ja) * 1985-08-30 1987-03-05 Hitachi Ltd 電子線描画装置
GB2196175B (en) * 1986-10-03 1990-10-17 Trialsite Ltd Production of pulsed electron beams
US4922196A (en) * 1988-09-02 1990-05-01 Amray, Inc. Beam-blanking apparatus for stroboscopic electron beam instruments
DE3933569A1 (de) * 1989-10-07 1991-04-18 Messer Griesheim Gmbh Verwendung eines im zwischenfokusbereich zwischen zwei linsen angeordneten ablenksystemes
DE3938221A1 (de) * 1989-11-17 1991-05-23 Messer Griesheim Gmbh Verfahren zum schutz einer blende beim erzeugen von elektronenstrahlimpulsen
US5276330A (en) * 1991-05-29 1994-01-04 Etec Systems, Inc. High accuracy beam blanker
US5412218A (en) * 1993-02-26 1995-05-02 Etec Systems, Inc. Differential virtual ground beam blanker
US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
US5747814A (en) * 1996-12-06 1998-05-05 International Business Machines Corporation Method for centering a lens in a charged-particle system
US6278124B1 (en) 1998-03-05 2001-08-21 Dupont Photomasks, Inc Electron beam blanking method and system for electron beam lithographic processing
US6521896B1 (en) * 2000-06-01 2003-02-18 Applied Materials, Inc. Blanker assembly employing dielectric material
US6617779B1 (en) 2001-10-04 2003-09-09 Samuel A. Schwartz Multi-bend cathode ray tube
US7009032B2 (en) 2002-12-20 2006-03-07 Ppg Industries Ohio, Inc. Sulfide-containing polythiols
GB2414857B (en) * 2004-06-03 2009-02-25 Nanobeam Ltd Apparatus for blanking a charged particle beam
US20090280329A1 (en) 2004-09-01 2009-11-12 Ppg Industries Ohio, Inc. Polyurethanes, Articles and Coatings Prepared Therefrom and Methods of Making the Same
US9464169B2 (en) 2004-09-01 2016-10-11 Ppg Industries Ohio, Inc. Polyurethanes, articles and coatings prepared therefrom and methods of making the same
WO2007131148A1 (en) 2006-05-05 2007-11-15 Ppg Industries Ohio, Inc. Polyurea/polythiourea coatings
US8569712B2 (en) 2010-10-07 2013-10-29 Fei Company Beam blanker for interrupting a beam of charged particles
NL2008174C2 (en) * 2012-01-24 2013-08-21 Mapper Lithography Ip Bv Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device.
EP3133633B1 (en) * 2016-02-24 2018-03-28 FEI Company Studying dynamic specimen behavior in a charged-particle microscope

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR791255A (fr) * 1934-06-13 1935-12-06 Fernseh Ag Procédé pour améliorer le rendement en rayon des tubes de braun
NL294850A (OSRAM) * 1962-07-05
US3374386A (en) * 1964-11-02 1968-03-19 Field Emission Corp Field emission cathode having tungsten miller indices 100 plane coated with zirconium, hafnium or magnesium on oxygen binder
NL6807439A (OSRAM) * 1968-05-27 1969-12-01
JPS5251871A (en) * 1975-10-23 1977-04-26 Rikagaku Kenkyusho Projecting method for charge particle beams
GB1557924A (en) * 1976-02-05 1979-12-19 Western Electric Co Irradiation apparatus and methods
GB1544222A (en) * 1976-07-02 1979-04-19 Zeiss Jena Veb Carl Method of and apparatus for non-thermal electron beam processing of workpieces
JPS5322357A (en) * 1976-08-13 1978-03-01 Jeol Ltd Beam blanking unit
DE2705417A1 (de) * 1977-02-09 1978-08-10 Siemens Ag Anordnung zum ein- und austasten des elektronenstrahls eines elektronenmikroskops
CA1100237A (en) * 1977-03-23 1981-04-28 Roger F.W. Pease Multiple electron beam exposure system
DE2743200A1 (de) * 1977-09-26 1979-04-05 Siemens Ag Verbesserung an einer vorrichtung zur elektronenstrahleintastung
JPS5953657B2 (ja) * 1978-09-30 1984-12-26 超エル・エス・アイ技術研究組合 電子線装置
JPS5562730A (en) * 1978-11-02 1980-05-12 Toshiba Corp Electron beam exposure device
JPS5691423A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Electron beam exposure device

Also Published As

Publication number Publication date
US4445041A (en) 1984-04-24
JPS58127A (ja) 1983-01-05
DE3219573A1 (de) 1983-03-10
GB2099626A (en) 1982-12-08
JPH0528753Y2 (OSRAM) 1993-07-23
JPS6234132B2 (OSRAM) 1987-07-24
GB2099626B (en) 1985-11-27
JPH02718U (OSRAM) 1990-01-05

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee