DE3211239C2 - Hochfrequenz-Schalteranordnung mit einer Anzahl von zwischen einem Eingangsteil für Hochfrequenzenergie und einem an einen Verbraucher angeschlossenen Ausgangsteil befindlichen Schalterelementen - Google Patents
Hochfrequenz-Schalteranordnung mit einer Anzahl von zwischen einem Eingangsteil für Hochfrequenzenergie und einem an einen Verbraucher angeschlossenen Ausgangsteil befindlichen SchalterelementenInfo
- Publication number
- DE3211239C2 DE3211239C2 DE3211239A DE3211239A DE3211239C2 DE 3211239 C2 DE3211239 C2 DE 3211239C2 DE 3211239 A DE3211239 A DE 3211239A DE 3211239 A DE3211239 A DE 3211239A DE 3211239 C2 DE3211239 C2 DE 3211239C2
- Authority
- DE
- Germany
- Prior art keywords
- electrodes
- effect transistor
- source
- field effect
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 27
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 description 36
- 239000004020 conductor Substances 0.000 description 18
- 238000001465 metallisation Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 13
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/86—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/18—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of distributed coupling, i.e. distributed amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/605—Distributed amplifiers
- H03F3/607—Distributed amplifiers using FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24767881A | 1981-03-26 | 1981-03-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3211239A1 DE3211239A1 (de) | 1982-11-18 |
| DE3211239C2 true DE3211239C2 (de) | 1994-07-14 |
Family
ID=22935881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3211239A Expired - Lifetime DE3211239C2 (de) | 1981-03-26 | 1982-03-26 | Hochfrequenz-Schalteranordnung mit einer Anzahl von zwischen einem Eingangsteil für Hochfrequenzenergie und einem an einen Verbraucher angeschlossenen Ausgangsteil befindlichen Schalterelementen |
Country Status (3)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0156585A3 (en) * | 1984-03-21 | 1987-03-25 | Plessey Overseas Limited | Travelling-wave field-effect transistor |
| US4543535A (en) * | 1984-04-16 | 1985-09-24 | Raytheon Company | Distributed power amplifier |
| US4939485A (en) * | 1988-12-09 | 1990-07-03 | Varian Associates, Inc. | Microwave field effect switch |
| FR2697698A1 (fr) * | 1992-11-04 | 1994-05-06 | Philips Electronique Lab | Dispositif semiconducteur comprenant un circuit amplificateur distribué monolithiquement intégré, à large bande et fort gain. |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1298591B (de) * | 1967-12-11 | 1969-07-03 | Schlumberger Overseas | Anordnung fuer die wahlweise Anschaltung einer von mehreren Signalquellen an gemeinsame Ausgangsklemmen |
| CH467556A (de) * | 1967-12-29 | 1969-01-15 | Ibm | Mikrowellengenerator |
| FR2443765A1 (fr) * | 1978-12-05 | 1980-07-04 | Thomson Csf | Amplificateur distribue pour hyperfrequences et dispositif d'amplification comportant un tel amplificateur |
-
1982
- 1982-03-24 GB GB8208584A patent/GB2095945B/en not_active Expired
- 1982-03-26 DE DE3211239A patent/DE3211239C2/de not_active Expired - Lifetime
- 1982-03-26 JP JP57048796A patent/JPS57173201A/ja active Granted
-
1984
- 1984-09-19 GB GB08423660A patent/GB2146195A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB8423660D0 (en) | 1984-10-24 |
| GB2095945A (en) | 1982-10-06 |
| JPS57173201A (en) | 1982-10-25 |
| DE3211239A1 (de) | 1982-11-18 |
| GB2146195A (en) | 1985-04-11 |
| GB2095945B (en) | 1986-02-26 |
| JPH0150122B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-10-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |