GB2095945B - Radio frequency network having plural electrically interconnected field effect transistor cells - Google Patents

Radio frequency network having plural electrically interconnected field effect transistor cells

Info

Publication number
GB2095945B
GB2095945B GB8208584A GB8208584A GB2095945B GB 2095945 B GB2095945 B GB 2095945B GB 8208584 A GB8208584 A GB 8208584A GB 8208584 A GB8208584 A GB 8208584A GB 2095945 B GB2095945 B GB 2095945B
Authority
GB
United Kingdom
Prior art keywords
radio frequency
field effect
effect transistor
frequency network
electrically interconnected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8208584A
Other languages
English (en)
Other versions
GB2095945A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB2095945A publication Critical patent/GB2095945A/en
Application granted granted Critical
Publication of GB2095945B publication Critical patent/GB2095945B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/86Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/10Auxiliary devices for switching or interrupting
    • H01P1/15Auxiliary devices for switching or interrupting by semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/18Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of distributed coupling, i.e. distributed amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605Distributed amplifiers
    • H03F3/607Distributed amplifiers using FET's
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Junction Field-Effect Transistors (AREA)
GB8208584A 1981-03-26 1982-03-24 Radio frequency network having plural electrically interconnected field effect transistor cells Expired GB2095945B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24767881A 1981-03-26 1981-03-26

Publications (2)

Publication Number Publication Date
GB2095945A GB2095945A (en) 1982-10-06
GB2095945B true GB2095945B (en) 1986-02-26

Family

ID=22935881

Family Applications (2)

Application Number Title Priority Date Filing Date
GB8208584A Expired GB2095945B (en) 1981-03-26 1982-03-24 Radio frequency network having plural electrically interconnected field effect transistor cells
GB08423660A Withdrawn GB2146195A (en) 1981-03-26 1984-09-19 Radio frequency network having plurality electrically interconnected field effect transistor cells

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB08423660A Withdrawn GB2146195A (en) 1981-03-26 1984-09-19 Radio frequency network having plurality electrically interconnected field effect transistor cells

Country Status (3)

Country Link
JP (1) JPS57173201A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3211239C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (2) GB2095945B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0156585A3 (en) * 1984-03-21 1987-03-25 Plessey Overseas Limited Travelling-wave field-effect transistor
US4543535A (en) * 1984-04-16 1985-09-24 Raytheon Company Distributed power amplifier
US4939485A (en) * 1988-12-09 1990-07-03 Varian Associates, Inc. Microwave field effect switch
FR2697698A1 (fr) * 1992-11-04 1994-05-06 Philips Electronique Lab Dispositif semiconducteur comprenant un circuit amplificateur distribué monolithiquement intégré, à large bande et fort gain.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298591B (de) * 1967-12-11 1969-07-03 Schlumberger Overseas Anordnung fuer die wahlweise Anschaltung einer von mehreren Signalquellen an gemeinsame Ausgangsklemmen
CH467556A (de) * 1967-12-29 1969-01-15 Ibm Mikrowellengenerator
FR2443765A1 (fr) * 1978-12-05 1980-07-04 Thomson Csf Amplificateur distribue pour hyperfrequences et dispositif d'amplification comportant un tel amplificateur

Also Published As

Publication number Publication date
GB8423660D0 (en) 1984-10-24
GB2095945A (en) 1982-10-06
JPS57173201A (en) 1982-10-25
DE3211239A1 (de) 1982-11-18
GB2146195A (en) 1985-04-11
DE3211239C2 (de) 1994-07-14
JPH0150122B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-10-27

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20020323