GB2095945B - Radio frequency network having plural electrically interconnected field effect transistor cells - Google Patents

Radio frequency network having plural electrically interconnected field effect transistor cells

Info

Publication number
GB2095945B
GB2095945B GB8208584A GB8208584A GB2095945B GB 2095945 B GB2095945 B GB 2095945B GB 8208584 A GB8208584 A GB 8208584A GB 8208584 A GB8208584 A GB 8208584A GB 2095945 B GB2095945 B GB 2095945B
Authority
GB
United Kingdom
Prior art keywords
radio frequency
field effect
effect transistor
frequency network
electrically interconnected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8208584A
Other versions
GB2095945A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB2095945A publication Critical patent/GB2095945A/en
Application granted granted Critical
Publication of GB2095945B publication Critical patent/GB2095945B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/18—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of distributed coupling, i.e. distributed amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
GB8208584A 1981-03-26 1982-03-24 Radio frequency network having plural electrically interconnected field effect transistor cells Expired GB2095945B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24767881A 1981-03-26 1981-03-26

Publications (2)

Publication Number Publication Date
GB2095945A GB2095945A (en) 1982-10-06
GB2095945B true GB2095945B (en) 1986-02-26

Family

ID=22935881

Family Applications (2)

Application Number Title Priority Date Filing Date
GB8208584A Expired GB2095945B (en) 1981-03-26 1982-03-24 Radio frequency network having plural electrically interconnected field effect transistor cells
GB08423660A Withdrawn GB2146195A (en) 1981-03-26 1984-09-19 Radio frequency network having plurality electrically interconnected field effect transistor cells

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB08423660A Withdrawn GB2146195A (en) 1981-03-26 1984-09-19 Radio frequency network having plurality electrically interconnected field effect transistor cells

Country Status (3)

Country Link
JP (1) JPS57173201A (en)
DE (1) DE3211239C2 (en)
GB (2) GB2095945B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0156585A3 (en) * 1984-03-21 1987-03-25 Plessey Overseas Limited Travelling-wave field-effect transistor
US4543535A (en) * 1984-04-16 1985-09-24 Raytheon Company Distributed power amplifier
US4939485A (en) * 1988-12-09 1990-07-03 Varian Associates, Inc. Microwave field effect switch
FR2697698A1 (en) * 1992-11-04 1994-05-06 Philips Electronique Lab Semiconductor device comprising a broadband, high gain monolithically integrated amplifier circuit.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298591B (en) * 1967-12-11 1969-07-03 Schlumberger Overseas Arrangement for the optional connection of one of several signal sources to common output terminals
CH467556A (en) * 1967-12-29 1969-01-15 Ibm Microwave generator
FR2443765A1 (en) * 1978-12-05 1980-07-04 Thomson Csf DISTRIBUTED AMPLIFIER FOR HYPERFREQUENCIES AND AMPLIFICATION DEVICE CONTAINING SUCH AMPLIFIER

Also Published As

Publication number Publication date
GB2146195A (en) 1985-04-11
GB2095945A (en) 1982-10-06
JPH0150122B2 (en) 1989-10-27
DE3211239A1 (en) 1982-11-18
JPS57173201A (en) 1982-10-25
DE3211239C2 (en) 1994-07-14
GB8423660D0 (en) 1984-10-24

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20020323