DE3177230D1 - Verfahren zum herstellen eines planar-phasenschiebers. - Google Patents

Verfahren zum herstellen eines planar-phasenschiebers.

Info

Publication number
DE3177230D1
DE3177230D1 DE8585114296T DE3177230T DE3177230D1 DE 3177230 D1 DE3177230 D1 DE 3177230D1 DE 8585114296 T DE8585114296 T DE 8585114296T DE 3177230 T DE3177230 T DE 3177230T DE 3177230 D1 DE3177230 D1 DE 3177230D1
Authority
DE
Germany
Prior art keywords
producing
phase shifter
planar phase
planar
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585114296T
Other languages
English (en)
Inventor
Ronald J Stockton
Robert E Munson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ball Corp
Original Assignee
Ball Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ball Corp filed Critical Ball Corp
Application granted granted Critical
Publication of DE3177230D1 publication Critical patent/DE3177230D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H01Q3/30Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
    • H01Q3/34Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
    • H01Q3/36Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters
    • H01Q3/38Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters the phase-shifters being digital
    • H01Q3/385Scan control logics

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Waveguides (AREA)
  • Waveguide Aerials (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Support Of Aerials (AREA)
  • Laminated Bodies (AREA)
DE8585114296T 1980-11-17 1981-09-05 Verfahren zum herstellen eines planar-phasenschiebers. Expired - Fee Related DE3177230D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20728980A 1980-11-17 1980-11-17

Publications (1)

Publication Number Publication Date
DE3177230D1 true DE3177230D1 (de) 1990-12-06

Family

ID=22769913

Family Applications (2)

Application Number Title Priority Date Filing Date
DE8181106988T Expired - Fee Related DE3177208D1 (de) 1980-11-17 1981-09-05 Integrierter monolithischer mikrowellenschaltkreis mit integraler antennenanordnung.
DE8585114296T Expired - Fee Related DE3177230D1 (de) 1980-11-17 1981-09-05 Verfahren zum herstellen eines planar-phasenschiebers.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE8181106988T Expired - Fee Related DE3177208D1 (de) 1980-11-17 1981-09-05 Integrierter monolithischer mikrowellenschaltkreis mit integraler antennenanordnung.

Country Status (4)

Country Link
EP (2) EP0190412B1 (de)
JP (1) JPS57128057A (de)
AT (2) ATE56107T1 (de)
DE (2) DE3177208D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801943A (en) * 1986-01-27 1989-01-31 Matsushita Electric Works, Ltd. Plane antenna assembly
FR2595873B1 (fr) * 1986-03-14 1988-09-16 Thomson Csf Reseau reflecteur a controle de phases et antenne comportant un tel reseau
GB2253308B (en) * 1986-09-26 1993-01-20 Gen Electric Co Plc Semiconductor circuit arrangements
US4908615A (en) * 1987-06-26 1990-03-13 Texas Instruments Incorporated Traffic light control system and method
JPH0287703A (ja) * 1988-09-24 1990-03-28 Nec Corp アンテナ付マイクロ波集積回路
JPH02288602A (ja) * 1989-04-28 1990-11-28 Nec Corp 指向性可変アンテナ
US5021799A (en) * 1989-07-03 1991-06-04 Motorola, Inc. High permitivity dielectric microstrip dipole antenna
US5254819A (en) * 1989-12-29 1993-10-19 Matsushita Electric Industrial Co., Ltd. High-frequency heating apparatus with copper for grounding layer surrounding electromagnetic wave antenna
JP2654248B2 (ja) * 1990-11-21 1997-09-17 株式会社エイ・ティ・アール光電波通信研究所 共平面アンテナ
JP2725464B2 (ja) * 1991-03-20 1998-03-11 三菱電機株式会社 通信受信用アレーアンテナ
JPH04302462A (ja) * 1991-03-29 1992-10-26 Alps Electric Co Ltd 送信用集積回路および受信用集積回路の製造方法
DE4119784C2 (de) * 1991-06-15 2003-10-30 Erich Kasper Planare Wellenleiterstruktur für integrierte Sender- und Empfängerschaltungen
DE4208101A1 (de) * 1992-03-13 1993-09-16 Thomson Brandt Gmbh Satellitenantenne oder richtantenne
CH686107B5 (fr) * 1992-12-23 1996-07-15 Asulab Sa Pièce d'horlogerie comportant une antenne d'émission d'un signal électromagnétique.
DE4433789A1 (de) * 1994-09-22 1996-03-28 Daimler Benz Ag Polarimetrisches Radarverfahren und polarimetrische Radaranordnung
US7023379B2 (en) 2003-04-03 2006-04-04 Gentex Corporation Vehicle rearview assembly incorporating a tri-band antenna module
DE102004029440A1 (de) 2004-06-18 2006-01-12 Infineon Technologies Ag Sende-/Empfangs-Einrichtung
IL186186A0 (en) * 2006-10-03 2008-01-20 Alberto Milano Communication system and method using an active phased array antenna
CN102820544B (zh) * 2012-07-03 2015-08-19 深圳光启创新技术有限公司 一种天线反射面相位校正贴膜及反射面天线

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475700A (en) * 1966-12-30 1969-10-28 Texas Instruments Inc Monolithic microwave duplexer switch
US3454906A (en) * 1967-05-02 1969-07-08 Texas Instruments Inc Bisected diode loaded line phase shifter
BE756728A (fr) * 1969-10-01 1971-03-01 Western Electric Co Commutateur a lignes a bandes pour haute frequence
JPS5641001B1 (de) * 1971-04-30 1981-09-25
US3811128A (en) * 1973-04-17 1974-05-14 Ball Brothers Res Corp Electrically scanned microstrip antenna
US3921177A (en) * 1973-04-17 1975-11-18 Ball Brothers Res Corp Microstrip antenna structures and arrays
US3916349A (en) * 1973-07-31 1975-10-28 Itt Phase shifter for linearly polarized antenna array
US4033788A (en) * 1973-12-10 1977-07-05 Hughes Aircraft Company Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
US3914784A (en) * 1973-12-10 1975-10-21 Hughes Aircraft Co Ion Implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
US4104672A (en) * 1976-10-29 1978-08-01 Bell Telephone Laboratories, Incorporated High power gallium arsenide schottky barrier field effect transistor
US4070639A (en) * 1976-12-30 1978-01-24 International Telephone And Telegraph Corporation Microwave 180° phase-bit device with integral loop transition

Also Published As

Publication number Publication date
DE3177208D1 (de) 1990-10-04
ATE58031T1 (de) 1990-11-15
ATE56107T1 (de) 1990-09-15
EP0055324A3 (en) 1983-08-10
JPH0449281B2 (de) 1992-08-11
EP0190412B1 (de) 1990-10-31
EP0190412A3 (en) 1986-10-08
EP0055324A2 (de) 1982-07-07
JPS57128057A (en) 1982-08-09
EP0055324B1 (de) 1990-08-29
EP0190412A2 (de) 1986-08-13

Similar Documents

Publication Publication Date Title
DE3177230D1 (de) Verfahren zum herstellen eines planar-phasenschiebers.
DE3381156D1 (de) Verfahren zum herstellen eines kondensators auf einem substrat.
DE3381509D1 (de) Verfahren zum herstellen von halbleiteranordnungen.
DE3579840D1 (de) Verfahren zum herstellen von kohlenstoffasern durch wachsen in der gasphase.
DE3584757D1 (de) Verfahren zum herstellen einer zwei-wannen-cmos-halbleiterstruktur.
DE3483579D1 (de) Verfahren zum herstellen einer leiterbahn.
DE3686453D1 (de) Verfahren zum herstellen einer duennen halbleiterschicht.
DE3577371D1 (de) Apparat zum herstellen einer halbleiteranordnung.
FR2324456A1 (fr) Procede de fabrication d'un stratifie utile pour confectionner des pneumatiques
DE69022604D1 (de) Verfahren zum Herstellen von Unterwasserbauwerken.
DE3684676D1 (de) Verfahren zum herstellen von halbleitersubstraten.
DE3482352D1 (de) Verfahren zum herstellen eines dielektrischen substrats.
DE3889024D1 (de) Verfahren zum Herstellen einer supraleitenden Dünnschicht.
ATA431781A (de) Verfahren zum herstellen von phenolschaeumen
DE3579770D1 (de) Verfahren zum herstellen eines eines verstaerkungsbauteils.
AT379097B (de) Verfahren zum herstellen einer stumpfen, vakuumdichten hartloetverbindung
DE3574525D1 (de) Verfahren zum herstellen von kontakten auf einer halbleitervorrichtung.
DE3586019D1 (de) Verfahren zum herstellen eines elektrostriktiven elementes.
DE3777149D1 (de) Verfahren zum vermehren von pflanzensetzlingen.
PL197962A1 (pl) Sposob usuwania obszarow materialow z podloza,zwlaszcza przy wytwarzaniu masek fotolitograficznych
DE3583808D1 (de) Verfahren zum herstellen eines transistors.
DE3381293D1 (de) Verfahren zum herstellen von anisotrop leitenden schichten.
DE3580335D1 (de) Verfahren zum herstellen einer halbleiterstruktur.
DE3889749D1 (de) Verfahren zum Vervielfältigen von Pflanzensämlingen.
ATE6082T1 (de) Verfahren zum freigeben von schichtstoffen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee