GB2253308B - Semiconductor circuit arrangements - Google Patents

Semiconductor circuit arrangements

Info

Publication number
GB2253308B
GB2253308B GB8623201A GB8623201A GB2253308B GB 2253308 B GB2253308 B GB 2253308B GB 8623201 A GB8623201 A GB 8623201A GB 8623201 A GB8623201 A GB 8623201A GB 2253308 B GB2253308 B GB 2253308B
Authority
GB
United Kingdom
Prior art keywords
semiconductor circuit
circuit arrangements
arrangements
semiconductor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8623201A
Other versions
GB2253308A (en
Inventor
Daniel V Mccaughan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Plessey Semiconductors Ltd
Original Assignee
General Electric Co PLC
Plessey Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC, Plessey Semiconductors Ltd filed Critical General Electric Co PLC
Priority to GB8623201A priority Critical patent/GB2253308B/en
Priority to NL8702104A priority patent/NL8702104A/en
Priority to DE19873732227 priority patent/DE3732227A1/en
Priority to FR8713212A priority patent/FR2677809A1/en
Publication of GB2253308A publication Critical patent/GB2253308A/en
Application granted granted Critical
Publication of GB2253308B publication Critical patent/GB2253308B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06551—Conductive connections on the side of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Radar Systems Or Details Thereof (AREA)
GB8623201A 1986-09-26 1986-09-26 Semiconductor circuit arrangements Expired - Fee Related GB2253308B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB8623201A GB2253308B (en) 1986-09-26 1986-09-26 Semiconductor circuit arrangements
NL8702104A NL8702104A (en) 1986-09-26 1987-09-07 SEMI-CONDUCTOR CIRCUIT DEVICE.
DE19873732227 DE3732227A1 (en) 1986-09-26 1987-09-24 SEMICONDUCTOR CIRCUIT ARRANGEMENT
FR8713212A FR2677809A1 (en) 1986-09-26 1987-09-24 SEMICONDUCTOR CIRCUIT ASSEMBLIES.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8623201A GB2253308B (en) 1986-09-26 1986-09-26 Semiconductor circuit arrangements

Publications (2)

Publication Number Publication Date
GB2253308A GB2253308A (en) 1992-09-02
GB2253308B true GB2253308B (en) 1993-01-20

Family

ID=10604845

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8623201A Expired - Fee Related GB2253308B (en) 1986-09-26 1986-09-26 Semiconductor circuit arrangements

Country Status (4)

Country Link
DE (1) DE3732227A1 (en)
FR (1) FR2677809A1 (en)
GB (1) GB2253308B (en)
NL (1) NL8702104A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5818112A (en) * 1994-11-15 1998-10-06 Siemens Aktiengesellschaft Arrangement for capacitive signal transmission between the chip layers of a vertically integrated circuit
US5701037A (en) * 1994-11-15 1997-12-23 Siemens Aktiengesellschaft Arrangement for inductive signal transmission between the chip layers of a vertically integrated circuit

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1229220A (en) * 1967-11-22 1971-04-21
GB1457866A (en) * 1974-04-15 1976-12-08 Ibm Interconnection structure
GB1469085A (en) * 1974-08-19 1977-03-30 Ibm Semiconductor wafers
GB2144907A (en) * 1983-08-09 1985-03-13 Standard Telephones Cables Ltd Mounting integrated circuit devices
EP0152794A2 (en) * 1984-02-17 1985-08-28 International Business Machines Corporation Multi-layered electrical interconnection structure
GB2162167A (en) * 1984-06-01 1986-01-29 Narumi China Corp Ceramic substrate material
EP0170122A2 (en) * 1984-07-30 1986-02-05 General Electric Company Low loss, multilevel silicon circuit board
EP0176245A2 (en) * 1984-08-28 1986-04-02 Nec Corporation Multilayer wiring substrate
EP0190412A2 (en) * 1980-11-17 1986-08-13 Ball Corporation Method for fabricating a planar phase-shifter
EP0193907A2 (en) * 1985-03-04 1986-09-10 Olin Corporation Hybrid and multi-layer circuitry
US4614947A (en) * 1983-04-22 1986-09-30 U.S. Philips Corporation Planar high-frequency antenna having a network of fully suspended-substrate microstrip transmission lines

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1229220A (en) * 1967-11-22 1971-04-21
GB1457866A (en) * 1974-04-15 1976-12-08 Ibm Interconnection structure
GB1469085A (en) * 1974-08-19 1977-03-30 Ibm Semiconductor wafers
EP0190412A2 (en) * 1980-11-17 1986-08-13 Ball Corporation Method for fabricating a planar phase-shifter
US4614947A (en) * 1983-04-22 1986-09-30 U.S. Philips Corporation Planar high-frequency antenna having a network of fully suspended-substrate microstrip transmission lines
GB2144907A (en) * 1983-08-09 1985-03-13 Standard Telephones Cables Ltd Mounting integrated circuit devices
EP0152794A2 (en) * 1984-02-17 1985-08-28 International Business Machines Corporation Multi-layered electrical interconnection structure
GB2162167A (en) * 1984-06-01 1986-01-29 Narumi China Corp Ceramic substrate material
EP0170122A2 (en) * 1984-07-30 1986-02-05 General Electric Company Low loss, multilevel silicon circuit board
EP0176245A2 (en) * 1984-08-28 1986-04-02 Nec Corporation Multilayer wiring substrate
EP0193907A2 (en) * 1985-03-04 1986-09-10 Olin Corporation Hybrid and multi-layer circuitry

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
The Multilayer Printed Circuit handbook by J.A.Scarlett, Electrochemical publn 1985 pages 3-23 *

Also Published As

Publication number Publication date
GB2253308A (en) 1992-09-02
FR2677809A1 (en) 1992-12-18
NL8702104A (en) 1992-10-01
DE3732227A1 (en) 1993-02-11

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930420