JPS57128057A - Monolithic microwave integrated circuit - Google Patents

Monolithic microwave integrated circuit

Info

Publication number
JPS57128057A
JPS57128057A JP56166536A JP16653681A JPS57128057A JP S57128057 A JPS57128057 A JP S57128057A JP 56166536 A JP56166536 A JP 56166536A JP 16653681 A JP16653681 A JP 16653681A JP S57128057 A JPS57128057 A JP S57128057A
Authority
JP
Japan
Prior art keywords
integrated circuit
microwave integrated
monolithic microwave
monolithic
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56166536A
Other languages
English (en)
Other versions
JPH0449281B2 (ja
Inventor
Jiei Sutotsukuton Ronarudo
Ii Manson Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ball Corp
Original Assignee
Ball Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ball Corp filed Critical Ball Corp
Publication of JPS57128057A publication Critical patent/JPS57128057A/ja
Publication of JPH0449281B2 publication Critical patent/JPH0449281B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
    • H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
    • H01Q3/36—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters
    • H01Q3/38—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters the phase-shifters being digital
    • H01Q3/385—Scan control logics
JP56166536A 1980-11-17 1981-10-20 Monolithic microwave integrated circuit Granted JPS57128057A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20728980A 1980-11-17 1980-11-17

Publications (2)

Publication Number Publication Date
JPS57128057A true JPS57128057A (en) 1982-08-09
JPH0449281B2 JPH0449281B2 (ja) 1992-08-11

Family

ID=22769913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56166536A Granted JPS57128057A (en) 1980-11-17 1981-10-20 Monolithic microwave integrated circuit

Country Status (4)

Country Link
EP (2) EP0190412B1 (ja)
JP (1) JPS57128057A (ja)
AT (2) ATE58031T1 (ja)
DE (2) DE3177230D1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0287703A (ja) * 1988-09-24 1990-03-28 Nec Corp アンテナ付マイクロ波集積回路
JPH02288602A (ja) * 1989-04-28 1990-11-28 Nec Corp 指向性可変アンテナ
WO1991010338A1 (en) * 1989-12-29 1991-07-11 Matsushita Electric Industrial Co., Ltd. High-frequency heating device
JPH04188904A (ja) * 1990-11-21 1992-07-07 A T R Koudenpa Tsushin Kenkyusho:Kk 共平面アンテナ
JPH04302462A (ja) * 1991-03-29 1992-10-26 Alps Electric Co Ltd 送信用集積回路および受信用集積回路の製造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801943A (en) * 1986-01-27 1989-01-31 Matsushita Electric Works, Ltd. Plane antenna assembly
FR2595873B1 (fr) * 1986-03-14 1988-09-16 Thomson Csf Reseau reflecteur a controle de phases et antenne comportant un tel reseau
GB2253308B (en) * 1986-09-26 1993-01-20 Gen Electric Co Plc Semiconductor circuit arrangements
US4908615A (en) * 1987-06-26 1990-03-13 Texas Instruments Incorporated Traffic light control system and method
US5021799A (en) * 1989-07-03 1991-06-04 Motorola, Inc. High permitivity dielectric microstrip dipole antenna
JP2725464B2 (ja) * 1991-03-20 1998-03-11 三菱電機株式会社 通信受信用アレーアンテナ
DE4119784C2 (de) * 1991-06-15 2003-10-30 Erich Kasper Planare Wellenleiterstruktur für integrierte Sender- und Empfängerschaltungen
DE4208101A1 (de) * 1992-03-13 1993-09-16 Thomson Brandt Gmbh Satellitenantenne oder richtantenne
CH686107B5 (fr) * 1992-12-23 1996-07-15 Asulab Sa Pièce d'horlogerie comportant une antenne d'émission d'un signal électromagnétique.
DE4433789A1 (de) * 1994-09-22 1996-03-28 Daimler Benz Ag Polarimetrisches Radarverfahren und polarimetrische Radaranordnung
US7023379B2 (en) 2003-04-03 2006-04-04 Gentex Corporation Vehicle rearview assembly incorporating a tri-band antenna module
DE102004029440A1 (de) 2004-06-18 2006-01-12 Infineon Technologies Ag Sende-/Empfangs-Einrichtung
IL186186A0 (en) * 2006-10-03 2008-01-20 Alberto Milano Communication system and method using an active phased array antenna
CN102820544B (zh) * 2012-07-03 2015-08-19 深圳光启创新技术有限公司 一种天线反射面相位校正贴膜及反射面天线

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3454906A (en) * 1967-05-02 1969-07-08 Texas Instruments Inc Bisected diode loaded line phase shifter
US3811128A (en) * 1973-04-17 1974-05-14 Ball Brothers Res Corp Electrically scanned microstrip antenna
US3914784A (en) * 1973-12-10 1975-10-21 Hughes Aircraft Co Ion Implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
US3921177A (en) * 1973-04-17 1975-11-18 Ball Brothers Res Corp Microstrip antenna structures and arrays

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475700A (en) * 1966-12-30 1969-10-28 Texas Instruments Inc Monolithic microwave duplexer switch
BE756728A (fr) * 1969-10-01 1971-03-01 Western Electric Co Commutateur a lignes a bandes pour haute frequence
JPS5641001B1 (ja) * 1971-04-30 1981-09-25
US3916349A (en) * 1973-07-31 1975-10-28 Itt Phase shifter for linearly polarized antenna array
US4033788A (en) * 1973-12-10 1977-07-05 Hughes Aircraft Company Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
US4104672A (en) * 1976-10-29 1978-08-01 Bell Telephone Laboratories, Incorporated High power gallium arsenide schottky barrier field effect transistor
US4070639A (en) * 1976-12-30 1978-01-24 International Telephone And Telegraph Corporation Microwave 180° phase-bit device with integral loop transition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3454906A (en) * 1967-05-02 1969-07-08 Texas Instruments Inc Bisected diode loaded line phase shifter
US3811128A (en) * 1973-04-17 1974-05-14 Ball Brothers Res Corp Electrically scanned microstrip antenna
US3921177A (en) * 1973-04-17 1975-11-18 Ball Brothers Res Corp Microstrip antenna structures and arrays
US3914784A (en) * 1973-12-10 1975-10-21 Hughes Aircraft Co Ion Implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0287703A (ja) * 1988-09-24 1990-03-28 Nec Corp アンテナ付マイクロ波集積回路
JPH02288602A (ja) * 1989-04-28 1990-11-28 Nec Corp 指向性可変アンテナ
WO1991010338A1 (en) * 1989-12-29 1991-07-11 Matsushita Electric Industrial Co., Ltd. High-frequency heating device
US5254819A (en) * 1989-12-29 1993-10-19 Matsushita Electric Industrial Co., Ltd. High-frequency heating apparatus with copper for grounding layer surrounding electromagnetic wave antenna
JPH04188904A (ja) * 1990-11-21 1992-07-07 A T R Koudenpa Tsushin Kenkyusho:Kk 共平面アンテナ
JPH04302462A (ja) * 1991-03-29 1992-10-26 Alps Electric Co Ltd 送信用集積回路および受信用集積回路の製造方法

Also Published As

Publication number Publication date
DE3177208D1 (de) 1990-10-04
JPH0449281B2 (ja) 1992-08-11
EP0190412A3 (en) 1986-10-08
EP0190412A2 (en) 1986-08-13
DE3177230D1 (de) 1990-12-06
EP0055324B1 (en) 1990-08-29
EP0190412B1 (en) 1990-10-31
EP0055324A3 (en) 1983-08-10
EP0055324A2 (en) 1982-07-07
ATE56107T1 (de) 1990-09-15
ATE58031T1 (de) 1990-11-15

Similar Documents

Publication Publication Date Title
JPS57128057A (en) Monolithic microwave integrated circuit
GB2086681B (en) Temperature compensated semiconductor integrated circuit
DE3279492D1 (en) Process for making multilayer integrated circuit substrate
AU543436B2 (en) Process for forming complementary integrated circuit devices
GB2076223B (en) A carrier element for an integrated circuit chip
AU541607B2 (en) Mounting chip type circuit elements
DE3587243D1 (de) Steuerschaltung für einen Halbleiterlaser.
DE3172424D1 (en) Substrate bias generator for mos integrated circuit
MY8600583A (en) Semiconductor integrated circuit devices and a process for producing the same
JPS5710977A (en) Semiconductor circuit
EP0022870A4 (en) SEMICONDUCTOR CIRCUIT.
GB2100949B (en) Feedback circuit
DE3279613D1 (en) Process for manufacturing an integrated circuit structure
GB2072385B (en) Temperature compensated integrated circuit
IT8419811A0 (it) Allineamento elettronico per sintonizzatori.
DE3063191D1 (en) Method for manufacturing a semiconductor integrated circuit
GB2074788B (en) Semiconductor integrated circuit
DE3375538D1 (en) Integrated circuit contact fabrication process
EP0091119A3 (en) Monolithic semiconductor integrated a.c. switch circuit
GB2084397B (en) Semiconductor integrated circuit
DE3174824D1 (en) Semiconductor integrated circuit
DE3173211D1 (en) Electronic gain control circuit
JPS56120158A (en) Monolithic semiconductor integrated circuit
GB2113498B (en) Output stage for an integrated e.c.l. circuit
GB2081003B (en) Microcircuit fabrication