DE3172382D1 - Method of manufacturing photo-voltaic devices - Google Patents
Method of manufacturing photo-voltaic devicesInfo
- Publication number
- DE3172382D1 DE3172382D1 DE8181305799T DE3172382T DE3172382D1 DE 3172382 D1 DE3172382 D1 DE 3172382D1 DE 8181305799 T DE8181305799 T DE 8181305799T DE 3172382 T DE3172382 T DE 3172382T DE 3172382 D1 DE3172382 D1 DE 3172382D1
- Authority
- DE
- Germany
- Prior art keywords
- cadmium sulphide
- photo
- sulphide
- voltaic
- achieve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 4
- 230000008021 deposition Effects 0.000 abstract 2
- 238000005507 spraying Methods 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 229910001887 tin oxide Inorganic materials 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
- H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
- Light Receiving Elements (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8039836 | 1980-12-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3172382D1 true DE3172382D1 (en) | 1985-10-24 |
Family
ID=10517936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181305799T Expired DE3172382D1 (en) | 1980-12-12 | 1981-12-08 | Method of manufacturing photo-voltaic devices |
Country Status (11)
Country | Link |
---|---|
US (1) | US4403398A (de) |
EP (1) | EP0054403B1 (de) |
AT (1) | ATE15734T1 (de) |
AU (1) | AU546072B2 (de) |
BR (1) | BR8108080A (de) |
CA (1) | CA1165847A (de) |
DE (1) | DE3172382D1 (de) |
ES (1) | ES8305535A1 (de) |
GB (1) | GB2089568B (de) |
IL (1) | IL64516A (de) |
NZ (1) | NZ199224A (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1207421A (en) * | 1983-11-14 | 1986-07-08 | Ottilia F. Toth | High efficiency stable cds cu.sub.2s solar cells manufacturing process using thick film methodology |
US4595790A (en) * | 1984-12-28 | 1986-06-17 | Sohio Commercial Development Co. | Method of making current collector grid and materials therefor |
US4675468A (en) * | 1985-12-20 | 1987-06-23 | The Standard Oil Company | Stable contact between current collector grid and transparent conductive layer |
GB2196650A (en) * | 1986-10-27 | 1988-05-05 | Prutec Ltd | Cadmium sulphide solar cells |
JPS63160352A (ja) * | 1986-12-24 | 1988-07-04 | Semiconductor Energy Lab Co Ltd | 半導体装置の実装方法 |
US6129948A (en) * | 1996-12-23 | 2000-10-10 | National Center For Manufacturing Sciences | Surface modification to achieve improved electrical conductivity |
CN111244225A (zh) * | 2018-11-29 | 2020-06-05 | 北京铂阳顶荣光伏科技有限公司 | 太阳电池缓冲层的制备装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3880633A (en) * | 1974-01-08 | 1975-04-29 | Baldwin Co D H | Method of coating a glass ribbon on a liquid float bath |
ZA755836B (en) * | 1974-09-23 | 1976-10-27 | Dh Baldwin Co | Photovoltaic cell |
US3975211A (en) * | 1975-03-28 | 1976-08-17 | Westinghouse Electric Corporation | Solar cells and method for making same |
US4143235A (en) * | 1977-12-30 | 1979-03-06 | Chevron Research Company | Cadmium sulfide photovoltaic cell and method of fabrication |
-
1981
- 1981-12-08 EP EP81305799A patent/EP0054403B1/de not_active Expired
- 1981-12-08 AT AT81305799T patent/ATE15734T1/de not_active IP Right Cessation
- 1981-12-08 DE DE8181305799T patent/DE3172382D1/de not_active Expired
- 1981-12-09 US US06/328,926 patent/US4403398A/en not_active Expired - Fee Related
- 1981-12-10 NZ NZ199224A patent/NZ199224A/en unknown
- 1981-12-11 IL IL64516A patent/IL64516A/xx unknown
- 1981-12-11 CA CA000392116A patent/CA1165847A/en not_active Expired
- 1981-12-11 BR BR8108080A patent/BR8108080A/pt unknown
- 1981-12-11 ES ES507920A patent/ES8305535A1/es not_active Expired
- 1981-12-11 AU AU78456/81A patent/AU546072B2/en not_active Ceased
- 1981-12-14 GB GB8137662A patent/GB2089568B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0054403A2 (de) | 1982-06-23 |
EP0054403B1 (de) | 1985-09-18 |
US4403398A (en) | 1983-09-13 |
ATE15734T1 (de) | 1985-10-15 |
AU546072B2 (en) | 1985-08-15 |
GB2089568B (en) | 1985-01-09 |
NZ199224A (en) | 1984-09-28 |
IL64516A0 (en) | 1982-03-31 |
GB2089568A (en) | 1982-06-23 |
BR8108080A (pt) | 1982-09-21 |
CA1165847A (en) | 1984-04-17 |
ES507920A0 (es) | 1983-04-01 |
IL64516A (en) | 1984-05-31 |
AU7845681A (en) | 1982-06-17 |
ES8305535A1 (es) | 1983-04-01 |
EP0054403A3 (en) | 1983-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4400577A (en) | Thin solar cells | |
SE8207034L (sv) | Fotocellsdon och sett att framstella detsamma | |
JP2000058885A (ja) | 太陽電池及びその製造方法 | |
CN102136503A (zh) | 太阳能电池及其制造方法 | |
CN102456754A (zh) | 用于薄膜光伏器件的硫化镉层和碲化镉层的混合以及它们的制造方法 | |
DE3172382D1 (en) | Method of manufacturing photo-voltaic devices | |
ES8404570A1 (es) | Metodo de fabricacion de una culula solar de sulfuro de cadmio. | |
JPS58218179A (ja) | 薄膜太陽電池 | |
US20060110860A1 (en) | Self-adjusting serial circuit of thin layers and method for production thereof | |
KR101210073B1 (ko) | 태양전지 및 그의 제조방법 | |
GB1338337A (en) | Cadmium sulphide thin film sustained conductivity device and method for making same | |
JPS5863179A (ja) | 光起電力装置 | |
JP2815729B2 (ja) | 薄膜太陽電池の製造方法 | |
CN102576759A (zh) | 太阳能电池设备及其制造方法 | |
TW331018B (en) | Method of fabricating semiconductor devices | |
JPS57167656A (en) | Manufacture of semiconductor device | |
JPS5788044A (en) | Manufacture of glass mask | |
JPS57126174A (en) | Thin film solar cell | |
JPS5534470A (en) | Production for solar battery | |
KR930015141A (ko) | 포토 다이오드의 제조방법 | |
SU1358777A1 (ru) | Способ изготовления двухуровневых тонкопленочных коммутационных плат | |
JPH0513795A (ja) | 光起電装置の製造方法 | |
JPS5555546A (en) | Method of wiring semiconductor device | |
JPS57134980A (en) | Manufacture of light-emitting semiconductor | |
JPS5590035A (en) | Manufacturing method for camera tube target |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |