DE3164104D1 - Blockable diode and method of manufacturing the same - Google Patents
Blockable diode and method of manufacturing the sameInfo
- Publication number
- DE3164104D1 DE3164104D1 DE8181400495T DE3164104T DE3164104D1 DE 3164104 D1 DE3164104 D1 DE 3164104D1 DE 8181400495 T DE8181400495 T DE 8181400495T DE 3164104 T DE3164104 T DE 3164104T DE 3164104 D1 DE3164104 D1 DE 3164104D1
- Authority
- DE
- Germany
- Prior art keywords
- grooves
- blockable
- diode
- manufacturing
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000001465 metallisation Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Microwave Amplifiers (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Battery Electrode And Active Subsutance (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8008271A FR2480502A1 (fr) | 1980-04-14 | 1980-04-14 | Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3164104D1 true DE3164104D1 (en) | 1984-07-19 |
Family
ID=9240809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181400495T Expired DE3164104D1 (en) | 1980-04-14 | 1981-03-27 | Blockable diode and method of manufacturing the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US4620213A (de) |
EP (1) | EP0038239B1 (de) |
JP (1) | JPS56157059A (de) |
AT (1) | ATE7983T1 (de) |
DE (1) | DE3164104D1 (de) |
FR (1) | FR2480502A1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2548453B1 (fr) * | 1983-06-30 | 1986-11-14 | Thomson Csf | Procede de fabrication d'un transistor a effet de champ a jonction vertical haute frequence |
JP4696964B2 (ja) * | 2005-07-15 | 2011-06-08 | ソニー株式会社 | メモリ用の半導体装置 |
RU2457578C1 (ru) * | 2011-04-06 | 2012-07-27 | Открытое акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (ОАО "Российские космические системы") | Блокирующий диод для солнечных батарей космических аппаратов |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1071294A (en) * | 1963-12-17 | 1967-06-07 | Mullard Ltd | Improvements in and relating to the manufacture of transistors |
FR1470898A (fr) * | 1965-03-10 | 1967-02-24 | Matsushita Electronics Corp | Dispositif semi-conducteur |
NL170348C (nl) * | 1970-07-10 | 1982-10-18 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult. |
US3927418A (en) * | 1971-12-11 | 1975-12-16 | Sony Corp | Charge transfer device |
US3855608A (en) * | 1972-10-24 | 1974-12-17 | Motorola Inc | Vertical channel junction field-effect transistors and method of manufacture |
JPS49134282A (de) * | 1973-04-25 | 1974-12-24 | ||
US4047195A (en) * | 1973-11-12 | 1977-09-06 | Scientific Micro Systems, Inc. | Semiconductor structure |
JPS50135989A (de) * | 1974-04-06 | 1975-10-28 | ||
US4003126A (en) * | 1974-09-12 | 1977-01-18 | Canadian Patents And Development Limited | Method of making metal oxide semiconductor devices |
JPS51132779A (en) * | 1975-05-14 | 1976-11-18 | Hitachi Ltd | Production method of vertical-junction type field-effect transistor |
GB1602361A (en) * | 1977-02-21 | 1981-11-11 | Zaidan Hojin Handotai Kenkyu | Semiconductor memory devices |
JPS542077A (en) * | 1977-06-08 | 1979-01-09 | Hitachi Ltd | Semiconductor switching element |
JPS5491074A (en) * | 1977-12-28 | 1979-07-19 | Seiko Instr & Electronics Ltd | Semiconductor device |
GB2026237A (en) * | 1978-07-19 | 1980-01-30 | Texas Instruments Ltd | Junction gate field effect transistors |
JPS5599774A (en) * | 1979-01-26 | 1980-07-30 | Semiconductor Res Found | Electrostatic induction type thyristor |
JPS55130176A (en) * | 1979-03-30 | 1980-10-08 | Hitachi Ltd | Field effect semiconductor element and method of fabricating the same |
-
1980
- 1980-04-14 FR FR8008271A patent/FR2480502A1/fr active Granted
-
1981
- 1981-03-27 AT AT81400495T patent/ATE7983T1/de not_active IP Right Cessation
- 1981-03-27 EP EP81400495A patent/EP0038239B1/de not_active Expired
- 1981-03-27 DE DE8181400495T patent/DE3164104D1/de not_active Expired
- 1981-04-14 JP JP5513881A patent/JPS56157059A/ja active Pending
-
1983
- 1983-12-29 US US06/566,963 patent/US4620213A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0038239B1 (de) | 1984-06-13 |
FR2480502A1 (fr) | 1981-10-16 |
FR2480502B1 (de) | 1984-08-03 |
US4620213A (en) | 1986-10-28 |
EP0038239A1 (de) | 1981-10-21 |
JPS56157059A (en) | 1981-12-04 |
ATE7983T1 (de) | 1984-06-15 |
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