DE3138140A1 - "verfahren zur herstellung von halbleiterbauelementen" - Google Patents

"verfahren zur herstellung von halbleiterbauelementen"

Info

Publication number
DE3138140A1
DE3138140A1 DE19813138140 DE3138140A DE3138140A1 DE 3138140 A1 DE3138140 A1 DE 3138140A1 DE 19813138140 DE19813138140 DE 19813138140 DE 3138140 A DE3138140 A DE 3138140A DE 3138140 A1 DE3138140 A1 DE 3138140A1
Authority
DE
Germany
Prior art keywords
substrate
oxygen
semiconductor
component
conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19813138140
Other languages
German (de)
English (en)
Other versions
DE3138140C2 (enExample
Inventor
Peter Denis Chelmsford Essex Scovell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of DE3138140A1 publication Critical patent/DE3138140A1/de
Application granted granted Critical
Publication of DE3138140C2 publication Critical patent/DE3138140C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1908—Preparing SOI wafers using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/023—Deep level dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
DE19813138140 1980-10-07 1981-09-25 "verfahren zur herstellung von halbleiterbauelementen" Granted DE3138140A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8032246A GB2085224B (en) 1980-10-07 1980-10-07 Isolating sc device using oxygen duping

Publications (2)

Publication Number Publication Date
DE3138140A1 true DE3138140A1 (de) 1982-05-19
DE3138140C2 DE3138140C2 (enExample) 1989-10-19

Family

ID=10516517

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813138140 Granted DE3138140A1 (de) 1980-10-07 1981-09-25 "verfahren zur herstellung von halbleiterbauelementen"

Country Status (6)

Country Link
US (1) US4490182A (enExample)
JP (1) JPS57132340A (enExample)
DE (1) DE3138140A1 (enExample)
FR (1) FR2491679B1 (enExample)
GB (1) GB2085224B (enExample)
IE (1) IE52184B1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031232A (ja) * 1983-07-29 1985-02-18 Toshiba Corp 半導体基体の製造方法
US4505759A (en) * 1983-12-19 1985-03-19 Mara William C O Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals
USH569H (en) 1984-09-28 1989-01-03 Motorola Inc. Charge storage depletion region discharge protection
WO1986002202A1 (en) * 1984-09-28 1986-04-10 Motorola, Inc. Charge storage depletion region discharge protection
JPS61121433A (ja) * 1984-11-19 1986-06-09 Sharp Corp 半導体基板
US4706378A (en) * 1985-01-30 1987-11-17 Texas Instruments Incorporated Method of making vertical bipolar transistor having base above buried nitride dielectric formed by deep implantation
US4717677A (en) * 1985-08-19 1988-01-05 Motorola Inc. Fabricating a semiconductor device with buried oxide
US4676841A (en) * 1985-09-27 1987-06-30 American Telephone And Telegraph Company, At&T Bell Laboratories Fabrication of dielectrically isolated devices utilizing buried oxygen implant and subsequent heat treatment at temperatures above 1300° C.
GB2183905B (en) * 1985-11-18 1989-10-04 Plessey Co Plc Method of semiconductor device manufacture
US4682407A (en) * 1986-01-21 1987-07-28 Motorola, Inc. Means and method for stabilizing polycrystalline semiconductor layers
JPS62219636A (ja) * 1986-03-20 1987-09-26 Hitachi Ltd 半導体装置
JPH0738435B2 (ja) * 1986-06-13 1995-04-26 松下電器産業株式会社 半導体装置の製造方法
US4863878A (en) * 1987-04-06 1989-09-05 Texas Instruments Incorporated Method of making silicon on insalator material using oxygen implantation
US4849370A (en) * 1987-12-21 1989-07-18 Texas Instruments Incorporated Anodizable strain layer for SOI semiconductor structures
US5670387A (en) * 1995-01-03 1997-09-23 Motorola, Inc. Process for forming semiconductor-on-insulator device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622382A (en) * 1969-05-05 1971-11-23 Ibm Semiconductor isolation structure and method of producing
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming
US3897274A (en) * 1971-06-01 1975-07-29 Texas Instruments Inc Method of fabricating dielectrically isolated semiconductor structures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1334520A (en) * 1970-06-12 1973-10-17 Atomic Energy Authority Uk Formation of electrically insulating layers in semiconducting materials
US3976511A (en) * 1975-06-30 1976-08-24 Ibm Corporation Method for fabricating integrated circuit structures with full dielectric isolation by ion bombardment
JPS5721856B2 (en) * 1977-11-28 1982-05-10 Nippon Telegraph & Telephone Semiconductor and its manufacture
JPS5640269A (en) * 1979-09-11 1981-04-16 Toshiba Corp Preparation of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622382A (en) * 1969-05-05 1971-11-23 Ibm Semiconductor isolation structure and method of producing
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming
US3897274A (en) * 1971-06-01 1975-07-29 Texas Instruments Inc Method of fabricating dielectrically isolated semiconductor structures

Also Published As

Publication number Publication date
JPS57132340A (en) 1982-08-16
IE52184B1 (en) 1987-08-05
JPS6224945B2 (enExample) 1987-05-30
US4490182A (en) 1984-12-25
FR2491679A1 (fr) 1982-04-09
DE3138140C2 (enExample) 1989-10-19
IE812339L (en) 1982-04-07
FR2491679B1 (fr) 1988-03-04
GB2085224B (en) 1984-08-15
GB2085224A (en) 1982-04-21

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