DE3102930C2 - - Google Patents
Info
- Publication number
- DE3102930C2 DE3102930C2 DE3102930A DE3102930A DE3102930C2 DE 3102930 C2 DE3102930 C2 DE 3102930C2 DE 3102930 A DE3102930 A DE 3102930A DE 3102930 A DE3102930 A DE 3102930A DE 3102930 C2 DE3102930 C2 DE 3102930C2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- semiconductor laser
- laser according
- contamination
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 38
- 239000012535 impurity Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 9
- 238000011109 contamination Methods 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- 230000003595 spectral effect Effects 0.000 claims description 4
- 239000002800 charge carrier Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 1
- 230000007704 transition Effects 0.000 description 8
- 230000005283 ground state Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000005281 excited state Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3971680A JPS56135992A (en) | 1980-03-27 | 1980-03-27 | Far infrared electromagnetic wave oscillator |
| JP3971580A JPS56135991A (en) | 1980-03-27 | 1980-03-27 | Far infrared electromagnetic wave oscillator |
| JP3971780A JPS56135993A (en) | 1980-03-27 | 1980-03-27 | Far infrared electromagnetic wave oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3102930A1 DE3102930A1 (de) | 1982-03-04 |
| DE3102930C2 true DE3102930C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-02-04 |
Family
ID=27290241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813102930 Granted DE3102930A1 (de) | 1980-03-27 | 1981-01-29 | Generator fuer langwellige elektromagnetische infrarotwellen |
Country Status (4)
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3725573C2 (de) * | 1987-08-01 | 1994-08-18 | Deutsche Aerospace | Optischer Resonator |
| US4941025A (en) * | 1987-12-30 | 1990-07-10 | Bell Communications Research, Inc. | Quantum well semiconductor structures for infrared and submillimeter light sources |
| US4874953A (en) * | 1988-10-06 | 1989-10-17 | California Institute Of Technology | Method for generation of tunable far infrared radiation from two-dimensional plasmons |
| RU2019881C1 (ru) * | 1991-12-26 | 1994-09-15 | Физический институт им.П.Н.Лебедева РАН | Электронно-лучевая трубка |
| RU2064206C1 (ru) * | 1991-12-26 | 1996-07-20 | Физический институт им.П.Н.Лебедева РАН | Лазерный экран электронно-лучевой трубки и способ его изготовления |
| US5254502A (en) * | 1992-03-27 | 1993-10-19 | Principia Optics, Inc. | Method for making a laser screen for a cathode-ray tube |
| US5339003A (en) * | 1992-06-22 | 1994-08-16 | Principia Optics, Inc. | Laser screen for a cathode-ray tube |
| US5881674A (en) * | 1998-02-17 | 1999-03-16 | Kim; Hee Jung | Process for preparing the interior surfaces of an aquarium with debris-repellent properties |
| EP1107044A1 (en) * | 1999-11-30 | 2001-06-13 | Hitachi Europe Limited | Photonic device |
| US6829269B2 (en) | 2002-05-21 | 2004-12-07 | University Of Massachusetts | Systems and methods using phonon mediated intersubband laser |
| US6888667B2 (en) * | 2002-11-08 | 2005-05-03 | Intel Corporation | Method and apparatus for silicon-based optically-pumped amplification using stimulated scattering |
| US7046714B2 (en) * | 2003-09-10 | 2006-05-16 | Intel Corporation | Method and apparatus for Raman ring resonator based laser/wavelength converter |
| US7628327B2 (en) * | 2004-03-26 | 2009-12-08 | Evans & Sutherland Computer Corporation | Shuttering system for scanning projectors |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1205621B (de) * | 1963-08-30 | 1965-11-25 | Siemens Ag | Optischer Sender oder Verstaerker, dessen selektiv fluoreszentes Medium aus mehrerenKristall-Teilsystemen besteht |
| US3611180A (en) * | 1968-05-02 | 1971-10-05 | Philco Ford Corp | Coherent far infrared generator |
| JPS5474686A (en) * | 1977-11-28 | 1979-06-14 | Agency Of Ind Science & Technol | Visible semiconductor laser and its manufacture |
| JP3074041B2 (ja) * | 1989-11-27 | 2000-08-07 | ランクサイド・テクノロジー・カンパニー・エルピー | 有機アミド変性ポリシラザンセラミック前駆体 |
-
1981
- 1981-01-29 DE DE19813102930 patent/DE3102930A1/de active Granted
- 1981-01-30 GB GB8102851A patent/GB2074780B/en not_active Expired
- 1981-01-30 FR FR8101900A patent/FR2479586B1/fr not_active Expired
-
1983
- 1983-08-09 US US06/521,226 patent/US4571727A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE3102930A1 (de) | 1982-03-04 |
| GB2074780B (en) | 1984-06-13 |
| US4571727A (en) | 1986-02-18 |
| GB2074780A (en) | 1981-11-04 |
| FR2479586A1 (fr) | 1981-10-02 |
| FR2479586B1 (fr) | 1986-04-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |