JPS56135992A - Far infrared electromagnetic wave oscillator - Google Patents

Far infrared electromagnetic wave oscillator

Info

Publication number
JPS56135992A
JPS56135992A JP3971680A JP3971680A JPS56135992A JP S56135992 A JPS56135992 A JP S56135992A JP 3971680 A JP3971680 A JP 3971680A JP 3971680 A JP3971680 A JP 3971680A JP S56135992 A JPS56135992 A JP S56135992A
Authority
JP
Japan
Prior art keywords
junction
electromagnetic wave
far infrared
current
wave oscillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3971680A
Other languages
Japanese (ja)
Other versions
JPS6237895B2 (en
Inventor
Junichi Nishizawa
Ken Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP3971680A priority Critical patent/JPS56135992A/en
Priority to DE19813102930 priority patent/DE3102930A1/en
Priority to GB8102851A priority patent/GB2074780B/en
Priority to FR8101900A priority patent/FR2479586B1/en
Publication of JPS56135992A publication Critical patent/JPS56135992A/en
Priority to US06/521,226 priority patent/US4571727A/en
Publication of JPS6237895B2 publication Critical patent/JPS6237895B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To generate the electromagnetic wave of the far infrared without requiring a light source for incidence by a method wherein the electromagnetic wave having quantum energy close to the quantum energy of an optical phonon is positively fedback, and a current is flowed to a pi-junction or ni-junction. CONSTITUTION:Electrodes 4, 5 are fitted on both sides of a pin-junction 3 to flow the current from DC power source 6 thereto. Reflectors 1, 2 are arranged on the sides of the pin-junction 3 when the current is flowed to the pi-junction or the ni-junction, the electrons are raised to an excited level. The electrons raised to the excited level discharge the phonons and return to basic state again. Thereby, the phonons are discharged.
JP3971680A 1980-03-27 1980-03-27 Far infrared electromagnetic wave oscillator Granted JPS56135992A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3971680A JPS56135992A (en) 1980-03-27 1980-03-27 Far infrared electromagnetic wave oscillator
DE19813102930 DE3102930A1 (en) 1980-03-27 1981-01-29 Generator for long-wave electromagnetic infrared waves
GB8102851A GB2074780B (en) 1980-03-27 1981-01-30 Far-infrared electromagnetic wave generator
FR8101900A FR2479586B1 (en) 1980-03-27 1981-01-30 ELECTROMAGNETIC WAVE GENERATOR IN THE FAR INFRARED
US06/521,226 US4571727A (en) 1980-03-27 1983-08-09 Far-infrared electromagnetic wave generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3971680A JPS56135992A (en) 1980-03-27 1980-03-27 Far infrared electromagnetic wave oscillator

Publications (2)

Publication Number Publication Date
JPS56135992A true JPS56135992A (en) 1981-10-23
JPS6237895B2 JPS6237895B2 (en) 1987-08-14

Family

ID=12560705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3971680A Granted JPS56135992A (en) 1980-03-27 1980-03-27 Far infrared electromagnetic wave oscillator

Country Status (1)

Country Link
JP (1) JPS56135992A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS644089A (en) * 1987-06-26 1989-01-09 Kokusai Denshin Denwa Co Ltd Infrared semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS644089A (en) * 1987-06-26 1989-01-09 Kokusai Denshin Denwa Co Ltd Infrared semiconductor laser

Also Published As

Publication number Publication date
JPS6237895B2 (en) 1987-08-14

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