FR2479586B1 - Generateur d'ondes electromagnetiques dans l'infrarouge lointain - Google Patents

Generateur d'ondes electromagnetiques dans l'infrarouge lointain

Info

Publication number
FR2479586B1
FR2479586B1 FR8101900A FR8101900A FR2479586B1 FR 2479586 B1 FR2479586 B1 FR 2479586B1 FR 8101900 A FR8101900 A FR 8101900A FR 8101900 A FR8101900 A FR 8101900A FR 2479586 B1 FR2479586 B1 FR 2479586B1
Authority
FR
France
Prior art keywords
electromagnetic wave
far infrared
wave generator
generator
infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8101900A
Other languages
English (en)
Other versions
FR2479586A1 (fr
Inventor
Jun-Ichi Nishizawa
Ken Suto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zaidan Hojin Handotai Kenkyu Shinkokai
Original Assignee
Zaidan Hojin Handotai Kenkyu Shinkokai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3971580A external-priority patent/JPS56135991A/ja
Priority claimed from JP3971780A external-priority patent/JPS56135993A/ja
Priority claimed from JP3971680A external-priority patent/JPS56135992A/ja
Application filed by Zaidan Hojin Handotai Kenkyu Shinkokai filed Critical Zaidan Hojin Handotai Kenkyu Shinkokai
Publication of FR2479586A1 publication Critical patent/FR2479586A1/fr
Application granted granted Critical
Publication of FR2479586B1 publication Critical patent/FR2479586B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
FR8101900A 1980-03-27 1981-01-30 Generateur d'ondes electromagnetiques dans l'infrarouge lointain Expired FR2479586B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3971580A JPS56135991A (en) 1980-03-27 1980-03-27 Far infrared electromagnetic wave oscillator
JP3971780A JPS56135993A (en) 1980-03-27 1980-03-27 Far infrared electromagnetic wave oscillator
JP3971680A JPS56135992A (en) 1980-03-27 1980-03-27 Far infrared electromagnetic wave oscillator

Publications (2)

Publication Number Publication Date
FR2479586A1 FR2479586A1 (fr) 1981-10-02
FR2479586B1 true FR2479586B1 (fr) 1986-04-18

Family

ID=27290241

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8101900A Expired FR2479586B1 (fr) 1980-03-27 1981-01-30 Generateur d'ondes electromagnetiques dans l'infrarouge lointain

Country Status (4)

Country Link
US (1) US4571727A (fr)
DE (1) DE3102930A1 (fr)
FR (1) FR2479586B1 (fr)
GB (1) GB2074780B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3725573C2 (de) * 1987-08-01 1994-08-18 Deutsche Aerospace Optischer Resonator
US4941025A (en) * 1987-12-30 1990-07-10 Bell Communications Research, Inc. Quantum well semiconductor structures for infrared and submillimeter light sources
US4874953A (en) * 1988-10-06 1989-10-17 California Institute Of Technology Method for generation of tunable far infrared radiation from two-dimensional plasmons
RU2019881C1 (ru) * 1991-12-26 1994-09-15 Физический институт им.П.Н.Лебедева РАН Электронно-лучевая трубка
RU2064206C1 (ru) * 1991-12-26 1996-07-20 Физический институт им.П.Н.Лебедева РАН Лазерный экран электронно-лучевой трубки и способ его изготовления
US5254502A (en) * 1992-03-27 1993-10-19 Principia Optics, Inc. Method for making a laser screen for a cathode-ray tube
US5339003A (en) * 1992-06-22 1994-08-16 Principia Optics, Inc. Laser screen for a cathode-ray tube
US5881674A (en) * 1998-02-17 1999-03-16 Kim; Hee Jung Process for preparing the interior surfaces of an aquarium with debris-repellent properties
EP1107044A1 (fr) * 1999-11-30 2001-06-13 Hitachi Europe Limited Dispositif photonique
US6829269B2 (en) 2002-05-21 2004-12-07 University Of Massachusetts Systems and methods using phonon mediated intersubband laser
US6888667B2 (en) * 2002-11-08 2005-05-03 Intel Corporation Method and apparatus for silicon-based optically-pumped amplification using stimulated scattering
US7046714B2 (en) * 2003-09-10 2006-05-16 Intel Corporation Method and apparatus for Raman ring resonator based laser/wavelength converter
US7628327B2 (en) * 2004-03-26 2009-12-08 Evans & Sutherland Computer Corporation Shuttering system for scanning projectors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1205621B (de) * 1963-08-30 1965-11-25 Siemens Ag Optischer Sender oder Verstaerker, dessen selektiv fluoreszentes Medium aus mehrerenKristall-Teilsystemen besteht
US3611180A (en) * 1968-05-02 1971-10-05 Philco Ford Corp Coherent far infrared generator
JPS5474686A (en) * 1977-11-28 1979-06-14 Agency Of Ind Science & Technol Visible semiconductor laser and its manufacture
JP3074041B2 (ja) * 1989-11-27 2000-08-07 ランクサイド・テクノロジー・カンパニー・エルピー 有機アミド変性ポリシラザンセラミック前駆体

Also Published As

Publication number Publication date
DE3102930A1 (de) 1982-03-04
FR2479586A1 (fr) 1981-10-02
DE3102930C2 (fr) 1988-02-04
GB2074780A (en) 1981-11-04
US4571727A (en) 1986-02-18
GB2074780B (en) 1984-06-13

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Legal Events

Date Code Title Description
ST Notification of lapse