DE3070293D1 - Method for producing a vertical bipolar pnp transistor structure - Google Patents

Method for producing a vertical bipolar pnp transistor structure

Info

Publication number
DE3070293D1
DE3070293D1 DE8080107626T DE3070293T DE3070293D1 DE 3070293 D1 DE3070293 D1 DE 3070293D1 DE 8080107626 T DE8080107626 T DE 8080107626T DE 3070293 T DE3070293 T DE 3070293T DE 3070293 D1 DE3070293 D1 DE 3070293D1
Authority
DE
Germany
Prior art keywords
producing
pnp transistor
transistor structure
vertical bipolar
bipolar pnp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080107626T
Other languages
German (de)
English (en)
Inventor
Ingrid Emese Magdo
Hans Stephen Rupprecht
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3070293D1 publication Critical patent/DE3070293D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H10P32/1414—
    • H10P32/171—
    • H10W15/00—
    • H10W15/01—
DE8080107626T 1980-01-18 1980-12-04 Method for producing a vertical bipolar pnp transistor structure Expired DE3070293D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/113,168 US4357622A (en) 1980-01-18 1980-01-18 Complementary transistor structure

Publications (1)

Publication Number Publication Date
DE3070293D1 true DE3070293D1 (en) 1985-04-18

Family

ID=22347937

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080107626T Expired DE3070293D1 (en) 1980-01-18 1980-12-04 Method for producing a vertical bipolar pnp transistor structure

Country Status (5)

Country Link
US (1) US4357622A (enExample)
EP (1) EP0032550B1 (enExample)
JP (1) JPS56105662A (enExample)
CA (1) CA1142267A (enExample)
DE (1) DE3070293D1 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534806A (en) * 1979-12-03 1985-08-13 International Business Machines Corporation Method for manufacturing vertical PNP transistor with shallow emitter
US4435225A (en) 1981-05-11 1984-03-06 Fairchild Camera & Instrument Corporation Method of forming self-aligned lateral bipolar transistor
US4431460A (en) * 1982-03-08 1984-02-14 International Business Machines Corporation Method of producing shallow, narrow base bipolar transistor structures via dual implantations of selected polycrystalline layer
EP0093304B1 (en) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Semiconductor ic and method of making the same
US4529996A (en) * 1983-04-14 1985-07-16 Allied Coporation Indium phosphide-boron phosphide heterojunction bipolar transistor
US4583106A (en) * 1983-08-04 1986-04-15 International Business Machines Corporation Fabrication methods for high performance lateral bipolar transistors
US4573256A (en) * 1983-08-26 1986-03-04 International Business Machines Corporation Method for making a high performance transistor integrated circuit
JPS6057952A (ja) * 1983-09-09 1985-04-03 Toshiba Corp 半導体装置の製造方法
US4523370A (en) * 1983-12-05 1985-06-18 Ncr Corporation Process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction
EP0151347B1 (en) * 1984-01-16 1988-10-26 Texas Instruments Incorporated Integrated circuit having bipolar and field effect devices and method of fabrication
US4728624A (en) * 1985-10-31 1988-03-01 International Business Machines Corporation Selective epitaxial growth structure and isolation
JPS62208670A (ja) * 1986-03-07 1987-09-12 Toshiba Corp 半導体装置の製造方法
US4969823A (en) * 1986-09-26 1990-11-13 Analog Devices, Incorporated Integrated circuit with complementary junction-isolated bipolar transistors and method of making same
US5065214A (en) * 1986-09-26 1991-11-12 Analog Devices, Incorporated Integrated circuit with complementary junction-isolated bipolar transistors
US5055417A (en) * 1987-06-11 1991-10-08 National Semiconductor Corporation Process for fabricating self-aligned high performance lateral action silicon-controlled rectifier and static random access memory cells
US5055418A (en) * 1987-07-29 1991-10-08 National Semiconductor Corporation Process for fabricating complementary contactless vertical bipolar transistors
US5177584A (en) * 1988-04-11 1993-01-05 Hitachi, Ltd. Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same
US4951115A (en) * 1989-03-06 1990-08-21 International Business Machines Corp. Complementary transistor structure and method for manufacture
US4997776A (en) * 1989-03-06 1991-03-05 International Business Machines Corp. Complementary bipolar transistor structure and method for manufacture
US5614756A (en) * 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
US5780323A (en) * 1990-04-12 1998-07-14 Actel Corporation Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
GB2248142A (en) * 1990-09-19 1992-03-25 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
JP2748988B2 (ja) * 1991-03-13 1998-05-13 三菱電機株式会社 半導体装置とその製造方法
US5151378A (en) * 1991-06-18 1992-09-29 National Semiconductor Corporation Self-aligned planar monolithic integrated circuit vertical transistor process
US5175117A (en) * 1991-12-23 1992-12-29 Motorola, Inc. Method for making buried isolation
US5885880A (en) * 1994-09-19 1999-03-23 Sony Corporation Bipolar transistor device and method for manufacturing the same
JPH08195399A (ja) * 1994-09-22 1996-07-30 Texas Instr Inc <Ti> 埋込み層を必要としない絶縁された垂直ｐｎｐトランジスタ
US5702959A (en) * 1995-05-31 1997-12-30 Texas Instruments Incorporated Method for making an isolated vertical transistor
JP3409548B2 (ja) * 1995-12-12 2003-05-26 ソニー株式会社 半導体装置の製造方法
EP0809286B1 (en) * 1996-05-14 2003-10-01 STMicroelectronics S.r.l. A process for the fabrication of semiconductor devices having various buried regions
IT1298516B1 (it) * 1998-01-30 2000-01-12 Sgs Thomson Microelectronics Dispositivo elettronico di potenza integrato su un materiale semiconduttore e relativo processo di fabricazione
JP3186043B2 (ja) * 1998-08-07 2001-07-11 日本電気株式会社 半導体装置の製造方法
DE10327709A1 (de) * 2003-06-21 2005-01-13 Infineon Technologies Ag Integrierte Schaltungsanordnung mit npn- und pnp-Bipolartransistoren sowie Herstellungsverfahren
US7046552B2 (en) * 2004-03-17 2006-05-16 Actrans System Incorporation, Usa Flash memory with enhanced program and erase coupling and process of fabricating the same
DE102006059113A1 (de) * 2006-12-08 2008-06-12 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Komplementäre Bipolar-Halbleitervorrichtung
FR3106931B1 (fr) * 2020-01-30 2022-02-18 St Microelectronics Crolles 2 Sas Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL145396B (nl) * 1966-10-21 1975-03-17 Philips Nv Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze.
US3730786A (en) * 1970-09-03 1973-05-01 Ibm Performance matched complementary pair transistors

Also Published As

Publication number Publication date
EP0032550B1 (de) 1985-03-13
JPH0147014B2 (enExample) 1989-10-12
CA1142267A (en) 1983-03-01
JPS56105662A (en) 1981-08-22
US4357622A (en) 1982-11-02
EP0032550A1 (de) 1981-07-29

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee