DE3066922D1 - A semiconductor memory device in which soft errors due to alpha particles are prevented - Google Patents

A semiconductor memory device in which soft errors due to alpha particles are prevented

Info

Publication number
DE3066922D1
DE3066922D1 DE8080301294T DE3066922T DE3066922D1 DE 3066922 D1 DE3066922 D1 DE 3066922D1 DE 8080301294 T DE8080301294 T DE 8080301294T DE 3066922 T DE3066922 T DE 3066922T DE 3066922 D1 DE3066922 D1 DE 3066922D1
Authority
DE
Germany
Prior art keywords
prevented
memory device
semiconductor memory
errors due
alpha particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080301294T
Other languages
German (de)
English (en)
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3066922D1 publication Critical patent/DE3066922D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/466—Three-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/386—Substrate regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/25—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons against alpha rays, e.g. for outer space applications

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
DE8080301294T 1979-05-02 1980-04-23 A semiconductor memory device in which soft errors due to alpha particles are prevented Expired DE3066922D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5460679A JPS55146956A (en) 1979-05-02 1979-05-02 Semiconductor element having function for avoiding generation of soft error due to alpha ray

Publications (1)

Publication Number Publication Date
DE3066922D1 true DE3066922D1 (en) 1984-04-19

Family

ID=12975387

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080301294T Expired DE3066922D1 (en) 1979-05-02 1980-04-23 A semiconductor memory device in which soft errors due to alpha particles are prevented

Country Status (4)

Country Link
EP (1) EP0018764B1 (enExample)
JP (1) JPS55146956A (enExample)
CA (1) CA1153829A (enExample)
DE (1) DE3066922D1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210665A (en) * 1981-06-19 1982-12-24 Mitsubishi Electric Corp Semiconductor memory device
JPS602782B2 (ja) * 1982-06-30 1985-01-23 富士通株式会社 半導体記憶装置
JPS60126861A (ja) * 1983-12-13 1985-07-06 Fujitsu Ltd 半導体記憶装置
EP0169938B1 (en) * 1983-12-15 1989-03-29 Kabushiki Kaisha Toshiba Semiconductor memory device having trenched capacitor
US4688063A (en) * 1984-06-29 1987-08-18 International Business Machines Corporation Dynamic ram cell with MOS trench capacitor in CMOS
JPS62114265A (ja) * 1985-11-13 1987-05-26 Mitsubishi Electric Corp 半導体記憶装置
US4852060A (en) * 1988-03-31 1989-07-25 International Business Machines Corporation Soft error resistant data storage cells
JPH07101733B2 (ja) * 1988-05-20 1995-11-01 日本電気株式会社 半導体記憶装置
JPH01305561A (ja) * 1988-06-03 1989-12-08 Fujitsu Ltd 半導体記憶装置
FR2655197B1 (fr) * 1989-11-28 1995-03-17 Sgs Thomson Microelectronics Circuit integre comprenant des memoires et son procede de fabrication.
JPH11224935A (ja) 1997-12-02 1999-08-17 Mitsubishi Electric Corp 半導体集積回路の基板及び半導体集積回路の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device
DE2736473A1 (de) * 1977-08-12 1979-02-22 Siemens Ag Verfahren zum herstellen einer ein- transistor-speicherzelle

Also Published As

Publication number Publication date
JPS55146956A (en) 1980-11-15
JPS6262065B2 (enExample) 1987-12-24
EP0018764B1 (en) 1984-03-14
CA1153829A (en) 1983-09-13
EP0018764A1 (en) 1980-11-12

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee