DE3032461C2 - - Google Patents

Info

Publication number
DE3032461C2
DE3032461C2 DE19803032461 DE3032461A DE3032461C2 DE 3032461 C2 DE3032461 C2 DE 3032461C2 DE 19803032461 DE19803032461 DE 19803032461 DE 3032461 A DE3032461 A DE 3032461A DE 3032461 C2 DE3032461 C2 DE 3032461C2
Authority
DE
Germany
Prior art keywords
layer
laser
silicon
metal contact
crystal surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19803032461
Other languages
German (de)
English (en)
Other versions
DE3032461A1 (de
Inventor
Hubert Dr.-Ing. 8000 Muenchen De Patalong
Eberhard F. Dipl.-Phys. Dr. 8023 Pullach De Krimmel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19803032461 priority Critical patent/DE3032461A1/de
Priority to US06/289,880 priority patent/US4359486A/en
Priority to EP81106341A priority patent/EP0046914B1/fr
Priority to JP13254981A priority patent/JPS5772322A/ja
Publication of DE3032461A1 publication Critical patent/DE3032461A1/de
Application granted granted Critical
Publication of DE3032461C2 publication Critical patent/DE3032461C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H01L29/456—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Thyristors (AREA)
DE19803032461 1980-08-28 1980-08-28 Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung Granted DE3032461A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19803032461 DE3032461A1 (de) 1980-08-28 1980-08-28 Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung
US06/289,880 US4359486A (en) 1980-08-28 1981-08-04 Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation
EP81106341A EP0046914B1 (fr) 1980-08-28 1981-08-14 Procédé de fabrication de couches métalliques de contact alliées sur structure cristalline des surfaces semi-conductrices à l'aide de rayonnements énergétiques pulsés
JP13254981A JPS5772322A (en) 1980-08-28 1981-08-24 Method of generating alloyed metallic contact layer to surface of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803032461 DE3032461A1 (de) 1980-08-28 1980-08-28 Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung

Publications (2)

Publication Number Publication Date
DE3032461A1 DE3032461A1 (de) 1982-04-01
DE3032461C2 true DE3032461C2 (fr) 1989-04-13

Family

ID=6110613

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803032461 Granted DE3032461A1 (de) 1980-08-28 1980-08-28 Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung

Country Status (2)

Country Link
JP (1) JPS5772322A (fr)
DE (1) DE3032461A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282478A (ja) 2002-01-17 2003-10-03 Sony Corp 合金化方法及び配線形成方法、表示素子の形成方法、画像表示装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6413441A (fr) * 1964-11-19 1966-05-20
GB1057687A (en) * 1964-12-11 1967-02-08 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
JPS51111061A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Electrode forming method
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
DE2825212C2 (de) * 1978-06-08 1980-03-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Halbleiterbauelementen mittels eines kurzen, intensiven Laserlichtpulses
CH638641A5 (de) * 1978-11-17 1983-09-30 Univ Bern Inst Fuer Angewandte Halbleiterbauelement, verfahren zu dessen herstellung und verwendung des halbleiterbauelements.
JPS5723223A (en) * 1980-07-18 1982-02-06 Fujitsu Ltd Manufacture of compound semiconductor device

Also Published As

Publication number Publication date
DE3032461A1 (de) 1982-04-01
JPS5772322A (en) 1982-05-06

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