DE3032461C2 - - Google Patents

Info

Publication number
DE3032461C2
DE3032461C2 DE3032461A DE3032461A DE3032461C2 DE 3032461 C2 DE3032461 C2 DE 3032461C2 DE 3032461 A DE3032461 A DE 3032461A DE 3032461 A DE3032461 A DE 3032461A DE 3032461 C2 DE3032461 C2 DE 3032461C2
Authority
DE
Germany
Prior art keywords
layer
laser
silicon
metal contact
crystal surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3032461A
Other languages
German (de)
English (en)
Other versions
DE3032461A1 (de
Inventor
Hubert Dr.-Ing. 8000 Muenchen De Patalong
Eberhard F. Dipl.-Phys. Dr. 8023 Pullach De Krimmel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19803032461 priority Critical patent/DE3032461A1/de
Priority to US06/289,880 priority patent/US4359486A/en
Priority to EP81106341A priority patent/EP0046914B1/de
Priority to JP56132549A priority patent/JPS5772322A/ja
Publication of DE3032461A1 publication Critical patent/DE3032461A1/de
Application granted granted Critical
Publication of DE3032461C2 publication Critical patent/DE3032461C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Thyristors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19803032461 1980-08-28 1980-08-28 Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung Granted DE3032461A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19803032461 DE3032461A1 (de) 1980-08-28 1980-08-28 Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung
US06/289,880 US4359486A (en) 1980-08-28 1981-08-04 Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation
EP81106341A EP0046914B1 (de) 1980-08-28 1981-08-14 Verfahren zum Herstellen von legierten Metallkontaktschichten auf kristallorientierten Halbleiteroberflächen mittels Energiepulsbestrahlung
JP56132549A JPS5772322A (en) 1980-08-28 1981-08-24 Method of generating alloyed metallic contact layer to surface of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803032461 DE3032461A1 (de) 1980-08-28 1980-08-28 Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung

Publications (2)

Publication Number Publication Date
DE3032461A1 DE3032461A1 (de) 1982-04-01
DE3032461C2 true DE3032461C2 (enExample) 1989-04-13

Family

ID=6110613

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803032461 Granted DE3032461A1 (de) 1980-08-28 1980-08-28 Verfahren zum herstellen von legierten metallkontaktschichten auf kristallorientierten halbleiteroberflaechen mittels energiepulsbestrahlung

Country Status (2)

Country Link
JP (1) JPS5772322A (enExample)
DE (1) DE3032461A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282478A (ja) 2002-01-17 2003-10-03 Sony Corp 合金化方法及び配線形成方法、表示素子の形成方法、画像表示装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6413441A (enExample) * 1964-11-19 1966-05-20
GB1057687A (en) * 1964-12-11 1967-02-08 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
JPS51111061A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Electrode forming method
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
DE2825212C2 (de) * 1978-06-08 1980-03-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Halbleiterbauelementen mittels eines kurzen, intensiven Laserlichtpulses
CH638641A5 (de) * 1978-11-17 1983-09-30 Univ Bern Inst Fuer Angewandte Halbleiterbauelement, verfahren zu dessen herstellung und verwendung des halbleiterbauelements.
JPS5723223A (en) * 1980-07-18 1982-02-06 Fujitsu Ltd Manufacture of compound semiconductor device

Also Published As

Publication number Publication date
DE3032461A1 (de) 1982-04-01
JPS5772322A (en) 1982-05-06

Similar Documents

Publication Publication Date Title
EP0046914B1 (de) Verfahren zum Herstellen von legierten Metallkontaktschichten auf kristallorientierten Halbleiteroberflächen mittels Energiepulsbestrahlung
EP0607180B1 (de) Verfahren zur herstellung von halbleiterbauelementen
DE10205323B4 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE2258444A1 (de) Verfahren und herstellung von elektrischisolierenden zonen in optischen bauelementen
WO2002025742A2 (de) Verfahren zur herstellung eines halbleiter-metallkontaktes durch eine dielektrische schicht
DE3490007T1 (de) Verfahren zur Herstellung von Solarzellen
DE2142146A1 (de) Halbleiteranordnung und Verfahren zur Herstellung einer derartigen Anordnung
DE2730566C3 (de) Halbleitervorrichtung mit einem pn-übergang und Verfahren zu ihrer Herstellung
DE2917654A1 (de) Anordnung und verfahren zum selektiven, elektrochemischen aetzen
DE2523307A1 (de) Halbleiter-bauelemente mit verbesserter lebensdauer
DE3217026A1 (de) Halbleitervorrichtung
DE3240162C2 (de) Verfahren zum Herstellen eines doppelt-diffundierten Leistungs-MOSFET mit Source-Basis-Kurzschluß
EP1680949A1 (de) Lötstopbarriere
DE2340142A1 (de) Verfahren zum herstellen von halbleiteranordnungen
DE2831035A1 (de) Verfahren zur herstellung eines waermeempfindlichen halbleiter-schaltelements
DE2839044A1 (de) Halbleiterbauelement mit schottky- sperrschichtuebergang
CH631291A5 (de) Verfahren zur stabilisierenden oberflaechenbehandlung von halbleiterkoerpern.
DE2613490A1 (de) Verfahren zur entfernung von vorspruengen auf epitaxieschichten
EP1139432A2 (de) Schottky-Diode
DE3032461C2 (enExample)
DE3444769C2 (enExample)
DE2512951A1 (de) Verfahren zur herstellung eines halbleiterbauelementes
DE3886286T2 (de) Verbindungsverfahren für Halbleiteranordnung.
DE2540430C2 (de) Verfahren zum Zerteilen eines aus einkristallinem Material bestehenden Halbleiterplättchens
DE1816748C3 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung

Legal Events

Date Code Title Description
AG Has addition no.

Ref country code: DE

Ref document number: 3045784

Format of ref document f/p: P

OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
AG Has addition no.

Ref country code: DE

Ref document number: 3045784

Format of ref document f/p: P

8110 Request for examination paragraph 44
AG Has addition no.

Ref country code: DE

Ref document number: 3045784

Format of ref document f/p: P

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee