DE3008040C2 - Verfahren zum epitaktischen Aufwachsen einer einkristallinen Seltenerdmetall-Eisen-granat-Schicht auf einem einkristallinen Seltenerdmetall-Gallium-granat-Substrat - Google Patents
Verfahren zum epitaktischen Aufwachsen einer einkristallinen Seltenerdmetall-Eisen-granat-Schicht auf einem einkristallinen Seltenerdmetall-Gallium-granat-SubstratInfo
- Publication number
- DE3008040C2 DE3008040C2 DE3008040A DE3008040A DE3008040C2 DE 3008040 C2 DE3008040 C2 DE 3008040C2 DE 3008040 A DE3008040 A DE 3008040A DE 3008040 A DE3008040 A DE 3008040A DE 3008040 C2 DE3008040 C2 DE 3008040C2
- Authority
- DE
- Germany
- Prior art keywords
- growth
- melt
- layer
- normal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title claims description 33
- 239000002223 garnet Substances 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 16
- 239000013078 crystal Substances 0.000 title claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 title claims description 10
- 229910052761 rare earth metal Inorganic materials 0.000 title claims description 6
- 150000002910 rare earth metals Chemical class 0.000 title claims description 6
- 229910052742 iron Inorganic materials 0.000 title claims description 5
- 239000000155 melt Substances 0.000 claims description 16
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 238000004781 supercooling Methods 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 2
- 230000007704 transition Effects 0.000 description 5
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910000464 lead oxide Inorganic materials 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000005418 spin wave Effects 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000001850 reproductive effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004018 waxing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7901629A NL7901629A (nl) | 1979-03-01 | 1979-03-01 | Werkwijze voor het vormen van monokristallijne laag van een magnetisch ijzeroxyde met spinel of granaat- structuur. |
| NL7905544A NL7905544A (nl) | 1979-03-01 | 1979-07-17 | Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3008040A1 DE3008040A1 (de) | 1980-09-11 |
| DE3008040C2 true DE3008040C2 (de) | 1986-12-04 |
Family
ID=26645502
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3008040A Expired DE3008040C2 (de) | 1979-03-01 | 1980-03-03 | Verfahren zum epitaktischen Aufwachsen einer einkristallinen Seltenerdmetall-Eisen-granat-Schicht auf einem einkristallinen Seltenerdmetall-Gallium-granat-Substrat |
| DE19803051043 Expired DE3051043C2 (de) | 1979-03-01 | 1980-03-03 | Verfahren zum epitakischen Aufwachsen einer einkristallinen Spinellferrit-Schicht auf einem eink ristallinen Substratkristall |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803051043 Expired DE3051043C2 (de) | 1979-03-01 | 1980-03-03 | Verfahren zum epitakischen Aufwachsen einer einkristallinen Spinellferrit-Schicht auf einem eink ristallinen Substratkristall |
Country Status (4)
| Country | Link |
|---|---|
| DE (2) | DE3008040C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2450291A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2044629B (enrdf_load_stackoverflow) |
| NL (1) | NL7905544A (enrdf_load_stackoverflow) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3698944A (en) * | 1970-06-15 | 1972-10-17 | Texas Instruments Inc | Method of obtaining phased growth of epitaxial layers |
| JPS5133898A (enrdf_load_stackoverflow) * | 1974-09-17 | 1976-03-23 | Hitachi Ltd | |
| US4050964A (en) * | 1975-12-01 | 1977-09-27 | Bell Telephone Laboratories, Incorporated | Growing smooth epitaxial layers on misoriented substrates |
-
1979
- 1979-07-17 NL NL7905544A patent/NL7905544A/nl not_active Application Discontinuation
-
1980
- 1980-02-27 GB GB8006635A patent/GB2044629B/en not_active Expired
- 1980-02-29 FR FR8004594A patent/FR2450291A1/fr active Granted
- 1980-03-03 DE DE3008040A patent/DE3008040C2/de not_active Expired
- 1980-03-03 DE DE19803051043 patent/DE3051043C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2044629B (en) | 1983-02-09 |
| FR2450291B1 (enrdf_load_stackoverflow) | 1982-11-26 |
| DE3008040A1 (de) | 1980-09-11 |
| DE3051043C2 (de) | 1986-10-09 |
| GB2044629A (en) | 1980-10-22 |
| NL7905544A (nl) | 1980-09-03 |
| FR2450291A1 (fr) | 1980-09-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: C30B 11/14 |
|
| 8172 | Supplementary division/partition in: |
Ref country code: DE Ref document number: 3051043 Format of ref document f/p: P |
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| Q171 | Divided out to: |
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| AH | Division in |
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| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |