DE2965786D1 - Semiconductor device and a method of producing the same - Google Patents

Semiconductor device and a method of producing the same

Info

Publication number
DE2965786D1
DE2965786D1 DE7979303032T DE2965786T DE2965786D1 DE 2965786 D1 DE2965786 D1 DE 2965786D1 DE 7979303032 T DE7979303032 T DE 7979303032T DE 2965786 T DE2965786 T DE 2965786T DE 2965786 D1 DE2965786 D1 DE 2965786D1
Authority
DE
Germany
Prior art keywords
producing
same
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7979303032T
Other languages
English (en)
Inventor
Tsuneo Funatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE2965786D1 publication Critical patent/DE2965786D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE7979303032T 1978-12-30 1979-12-21 Semiconductor device and a method of producing the same Expired DE2965786D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53165804A JPS6043024B2 (ja) 1978-12-30 1978-12-30 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE2965786D1 true DE2965786D1 (en) 1983-07-28

Family

ID=15819301

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7979303032T Expired DE2965786D1 (en) 1978-12-30 1979-12-21 Semiconductor device and a method of producing the same

Country Status (4)

Country Link
US (2) US4375645A (de)
EP (1) EP0013508B1 (de)
JP (1) JPS6043024B2 (de)
DE (1) DE2965786D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56146247A (en) * 1980-03-25 1981-11-13 Fujitsu Ltd Manufacture of semiconductor device
DE3129558A1 (de) * 1980-07-28 1982-03-18 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zur herstellung einer integrierten halbleiterschaltung
DE3174546D1 (en) * 1981-05-30 1986-06-12 Ibm Deutschland High-speed large-scale integrated memory with bipolar transistors
JPS582041A (ja) * 1981-06-26 1983-01-07 Fujitsu Ltd 半導体装置
JPS589358A (ja) * 1981-07-09 1983-01-19 Mitsubishi Electric Corp 半導体集積回路装置
US4819054A (en) * 1982-09-29 1989-04-04 Hitachi, Ltd. Semiconductor IC with dual groove isolation
JPS59119848A (ja) * 1982-12-27 1984-07-11 Fujitsu Ltd 半導体装置の製造方法
GB2148593B (en) * 1983-10-14 1987-06-10 Hitachi Ltd Process for manufacturing the isolating regions of a semiconductor integrated circuit device
JPS6127669A (ja) * 1984-07-18 1986-02-07 Hitachi Ltd 半導体装置
US4665010A (en) * 1985-04-29 1987-05-12 International Business Machines Corporation Method of fabricating photopolymer isolation trenches in the surface of a semiconductor wafer
JPS62149153A (ja) * 1985-09-17 1987-07-03 Fujitsu Ltd 埋込型素子分離溝の構造とその形成方法
US4813017A (en) * 1985-10-28 1989-03-14 International Business Machines Corportion Semiconductor memory device and array
US4671851A (en) * 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4717681A (en) * 1986-05-19 1988-01-05 Texas Instruments Incorporated Method of making a heterojunction bipolar transistor with SIPOS
JPS62277745A (ja) * 1986-05-27 1987-12-02 Toshiba Corp 半導体集積回路
US4771013A (en) * 1986-08-01 1988-09-13 Texas Instruments Incorporated Process of making a double heterojunction 3-D I2 L bipolar transistor with a Si/Ge superlattice
US5021856A (en) * 1989-03-15 1991-06-04 Plessey Overseas Limited Universal cell for bipolar NPN and PNP transistors and resistive elements
US5276638A (en) * 1991-07-31 1994-01-04 International Business Machines Corporation Bipolar memory cell with isolated PNP load
US5601687A (en) * 1995-09-11 1997-02-11 The United States Of America As Represented By The Secretary Of The Air Force Mask design
US5824580A (en) * 1996-07-30 1998-10-20 International Business Machines Corporation Method of manufacturing an insulated gate field effect transistor
US5721448A (en) * 1996-07-30 1998-02-24 International Business Machines Corporation Integrated circuit chip having isolation trenches composed of a dielectric layer with oxidation catalyst material
US5757059A (en) * 1996-07-30 1998-05-26 International Business Machines Corporation Insulated gate field effect transistor
US7940105B2 (en) * 2008-08-08 2011-05-10 Beckman Coulter, Inc. High-resolution parametric signal restoration

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1410043A (en) * 1972-10-19 1975-10-15 Foseco Trading Ag Refractory heat insulating materials
US3878552A (en) * 1972-11-13 1975-04-15 Thurman J Rodgers Bipolar integrated circuit and method
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation
US3978515A (en) * 1974-04-26 1976-08-31 Bell Telephone Laboratories, Incorporated Integrated injection logic using oxide isolation
JPS5340437B2 (de) * 1974-11-15 1978-10-27
JPS5235987A (en) * 1975-09-16 1977-03-18 Hitachi Ltd Semiconductor integrated circuit
JPS5274287A (en) * 1975-12-17 1977-06-22 Mitsubishi Electric Corp Semiconductor device
JPS52124880A (en) * 1976-04-14 1977-10-20 Hitachi Ltd Semiconductor device
JPS52147083A (en) * 1976-06-02 1977-12-07 Agency Of Ind Science & Technol Semiconductor devices and integrated circuit using the same
US4231057A (en) * 1978-11-13 1980-10-28 Fujitsu Limited Semiconductor device and method for its preparation
JPS5534619U (de) * 1978-08-25 1980-03-06
JPS5534442A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Preparation of semiconductor device
JPS5546548A (en) * 1978-09-28 1980-04-01 Semiconductor Res Found Electrostatic induction integrated circuit
US4231056A (en) * 1978-10-20 1980-10-28 Harris Corporation Moat resistor ram cell
US4269636A (en) * 1978-12-29 1981-05-26 Harris Corporation Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking
US4255207A (en) * 1979-04-09 1981-03-10 Harris Corporation Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation

Also Published As

Publication number Publication date
JPS5591862A (en) 1980-07-11
EP0013508B1 (de) 1983-06-22
US4420874A (en) 1983-12-20
US4375645A (en) 1983-03-01
JPS6043024B2 (ja) 1985-09-26
EP0013508A1 (de) 1980-07-23

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee