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Fraunhofer Institut fuer Nachrichtentechnik Heinrich Hertz Institute HHI
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Fraunhofer Institut fuer Nachrichtentechnik Heinrich Hertz Institute HHI
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Verfahren zum herstellen einer integrierten halbleiterschaltung mit verschiedenen, gegeneinander und gegen ein gemeinsames siliziumsubstrat elektrisch isolierten schaltungselementen
Halbleiterbauelement mit mehreren epitaktischen Halbleiterschichten, insbesondere Halbleiterlaser oder Feldeffektransistor, sowie Verfahren zu dessen Herstellung