DE2928256A1 - Verfahren zur ausbildung eines transparenten leitungsmusters - Google Patents

Verfahren zur ausbildung eines transparenten leitungsmusters

Info

Publication number
DE2928256A1
DE2928256A1 DE19792928256 DE2928256A DE2928256A1 DE 2928256 A1 DE2928256 A1 DE 2928256A1 DE 19792928256 DE19792928256 DE 19792928256 DE 2928256 A DE2928256 A DE 2928256A DE 2928256 A1 DE2928256 A1 DE 2928256A1
Authority
DE
Germany
Prior art keywords
layer
tin
transparent
pattern
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19792928256
Other languages
German (de)
English (en)
Other versions
DE2928256C2 (enrdf_load_stackoverflow
Inventor
Jun Elroy C Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of DE2928256A1 publication Critical patent/DE2928256A1/de
Application granted granted Critical
Publication of DE2928256C2 publication Critical patent/DE2928256C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/04—Treatment of selected surface areas, e.g. using masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Liquid Crystal (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19792928256 1978-07-17 1979-07-12 Verfahren zur ausbildung eines transparenten leitungsmusters Granted DE2928256A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92524578A 1978-07-17 1978-07-17

Publications (2)

Publication Number Publication Date
DE2928256A1 true DE2928256A1 (de) 1980-01-31
DE2928256C2 DE2928256C2 (enrdf_load_stackoverflow) 1990-09-20

Family

ID=25451441

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19792928256 Granted DE2928256A1 (de) 1978-07-17 1979-07-12 Verfahren zur ausbildung eines transparenten leitungsmusters

Country Status (3)

Country Link
JP (1) JPS6041803B2 (enrdf_load_stackoverflow)
DE (1) DE2928256A1 (enrdf_load_stackoverflow)
NL (1) NL7905560A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0856878A3 (de) * 1997-01-29 1999-04-07 Siemens Aktiengesellschaft Verfahren zum Erzeugen einer edelmetallhaltigen Struktur auf einem Halbleiterbauelement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2932590A (en) * 1956-05-31 1960-04-12 Battelle Development Corp Indium oxide coatings
US2971867A (en) * 1957-12-19 1961-02-14 Pittsburgh Plate Glass Co Coating surfaces
US3814501A (en) * 1972-12-04 1974-06-04 Rca Corp Liquid-crystal display device and method of making
GB1399961A (en) * 1973-04-30 1975-07-02 Asahi Glass Co Ltd Method of forming a patterned transparent electro-conductive film on a substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2932590A (en) * 1956-05-31 1960-04-12 Battelle Development Corp Indium oxide coatings
US2971867A (en) * 1957-12-19 1961-02-14 Pittsburgh Plate Glass Co Coating surfaces
US3814501A (en) * 1972-12-04 1974-06-04 Rca Corp Liquid-crystal display device and method of making
GB1399961A (en) * 1973-04-30 1975-07-02 Asahi Glass Co Ltd Method of forming a patterned transparent electro-conductive film on a substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0856878A3 (de) * 1997-01-29 1999-04-07 Siemens Aktiengesellschaft Verfahren zum Erzeugen einer edelmetallhaltigen Struktur auf einem Halbleiterbauelement

Also Published As

Publication number Publication date
DE2928256C2 (enrdf_load_stackoverflow) 1990-09-20
NL7905560A (nl) 1980-01-21
JPS6041803B2 (ja) 1985-09-19
JPS5517989A (en) 1980-02-07

Similar Documents

Publication Publication Date Title
DE3490007C2 (enrdf_load_stackoverflow)
DE1589810C3 (de) Passiviertes Halbleiterbauelement und Verfahren zu seiner Herstellung
DE3541587C2 (de) Verfahren zur Herstellung eines dünnen Halbleiterfilms
DE3311635C2 (enrdf_load_stackoverflow)
DE69127395T2 (de) Verfahren zum Herstellen eines Dünnfilm-Transistors mit polykristallinem Halbleiter
DE3117950C2 (enrdf_load_stackoverflow)
DE2125827B2 (de) Verfahren zum Aufstäuben eines elektrisch leitenden Metalloxidüberzuges
DE1903961B2 (de) Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung
EP0142114B1 (de) Verfahren zum Herstellen einer Solarzelle
EP0010596A1 (de) Verfahren zur Ausbildung von Maskenöffnungen bei der Herstellung von Halbleiteranordnungen
DE2655937A1 (de) Verfahren zum planaren isolieren von leitungsmustern, durch chemischen niederschlag aus der dampfphase
DE2738384A1 (de) Verfahren zur herstellung eines halbleiters
DE2618445A1 (de) Verfahren zum herstellen einer halbleitervorrichtung
DE3335107C2 (de) Verfahren zum Herstellen eines Gegenstandes mit einem über einem Substrat liegenden Mehrkomponentenmaterial
DE1302005C2 (de) Verwendung eines metallischen ueberzugs als grossflaechiger anschluss fuer plenare halbleiterbauelemente
DE2539943A1 (de) Verfahren zum stabilisieren von mos-bauelementen
DE19649670A1 (de) Verfahren zur Herstellung eines Kondensators einer Halbleitervorrichtung und zugehörige Anordnung
DE1640486A1 (de) Verfahren zum Erzeugen eines duennen,elektrisch isolierenden Filmes auf einer Unterlage
DE69208170T2 (de) Plasma unterstützte chemische Dampfabscheidung von einem Oxidfilmstapel
DE2741440A1 (de) Elektrochromatische anzeigevorrichtung
DE69725046T2 (de) Elektrode für eine Plasmaanzeigetafel und Verfahren zu deren Herstellung
DE2654979B2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE69223118T2 (de) Dünnschicht-Transistor-Panel und dessen Herstellungsmethode
DE2928256C2 (enrdf_load_stackoverflow)
DE102012104616A1 (de) Verfahren zum Bilden einer Fensterschicht in einer Dünnschicht-Photovoltaikvorrichtung auf Cadmiumtelluridbasis

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee