DE2924569C2 - Halbleiterdetektor aus hochreinem Grundmaterial, insbesondere Germanium - Google Patents

Halbleiterdetektor aus hochreinem Grundmaterial, insbesondere Germanium

Info

Publication number
DE2924569C2
DE2924569C2 DE2924569A DE2924569A DE2924569C2 DE 2924569 C2 DE2924569 C2 DE 2924569C2 DE 2924569 A DE2924569 A DE 2924569A DE 2924569 A DE2924569 A DE 2924569A DE 2924569 C2 DE2924569 C2 DE 2924569C2
Authority
DE
Germany
Prior art keywords
implantation
phosphorus
base material
detectors
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2924569A
Other languages
German (de)
English (en)
Other versions
DE2924569A1 (de
Inventor
Davor 5170 Jülich Protic
Georg Dr. 5353 Mechernich Riepe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Kernforschungsanlage Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kernforschungsanlage Juelich GmbH filed Critical Kernforschungsanlage Juelich GmbH
Priority to DE2924569A priority Critical patent/DE2924569C2/de
Priority to GB8018484A priority patent/GB2057758B/en
Priority to IL60322A priority patent/IL60322A/xx
Priority to US06/160,232 priority patent/US4415916A/en
Priority to FR8013520A priority patent/FR2459554A1/fr
Priority to CA000354273A priority patent/CA1144663A/en
Priority to JP8154380A priority patent/JPS568886A/ja
Publication of DE2924569A1 publication Critical patent/DE2924569A1/de
Application granted granted Critical
Publication of DE2924569C2 publication Critical patent/DE2924569C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
DE2924569A 1979-06-19 1979-06-19 Halbleiterdetektor aus hochreinem Grundmaterial, insbesondere Germanium Expired DE2924569C2 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE2924569A DE2924569C2 (de) 1979-06-19 1979-06-19 Halbleiterdetektor aus hochreinem Grundmaterial, insbesondere Germanium
GB8018484A GB2057758B (en) 1979-06-19 1980-06-05 N+contact for high purity semi-conductor detector
IL60322A IL60322A (en) 1979-06-19 1980-06-16 Semiconductor detector and its production
US06/160,232 US4415916A (en) 1979-06-19 1980-06-17 Germanium semiconducting radiation detector with phosphorus implanted n+ contact
FR8013520A FR2459554A1 (fr) 1979-06-19 1980-06-18 Detecteurs a semi-conducteurs au ge comportant un contact de type n+ realise par implantation de phosphore
CA000354273A CA1144663A (en) 1979-06-19 1980-06-18 Germanium semiconducting radiation detector with phosphorus implanted n.sup. contacts
JP8154380A JPS568886A (en) 1979-06-19 1980-06-18 Geesemiconductor detector having n****contact implanted with phosphorus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2924569A DE2924569C2 (de) 1979-06-19 1979-06-19 Halbleiterdetektor aus hochreinem Grundmaterial, insbesondere Germanium

Publications (2)

Publication Number Publication Date
DE2924569A1 DE2924569A1 (de) 1981-01-08
DE2924569C2 true DE2924569C2 (de) 1983-12-08

Family

ID=6073511

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2924569A Expired DE2924569C2 (de) 1979-06-19 1979-06-19 Halbleiterdetektor aus hochreinem Grundmaterial, insbesondere Germanium

Country Status (7)

Country Link
US (1) US4415916A (Direct)
JP (1) JPS568886A (Direct)
CA (1) CA1144663A (Direct)
DE (1) DE2924569C2 (Direct)
FR (1) FR2459554A1 (Direct)
GB (1) GB2057758B (Direct)
IL (1) IL60322A (Direct)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514748A (en) * 1983-11-21 1985-04-30 At&T Bell Laboratories Germanium p-i-n photodetector on silicon substrate
DE3815615A1 (de) * 1988-05-07 1989-11-16 Bosch Gmbh Robert Verfahren zur herstellung einer hochsperrenden leistungsdiode
US5621238A (en) * 1994-02-25 1997-04-15 The United States Of America As Represented By The Secretary Of The Air Force Narrow band semiconductor detector
US7238597B2 (en) * 2002-09-27 2007-07-03 Brontek Delta Corporation Boron ion delivery system
US8178430B2 (en) 2009-04-08 2012-05-15 International Business Machines Corporation N-type carrier enhancement in semiconductors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2155773A1 (en) * 1971-10-04 1973-05-25 Radiotechnique Compelec Semiconductor radioactivity detector - with medical application as intravenous probe

Also Published As

Publication number Publication date
IL60322A0 (en) 1980-09-16
FR2459554B1 (Direct) 1984-10-26
IL60322A (en) 1983-06-15
CA1144663A (en) 1983-04-12
GB2057758B (en) 1983-12-14
US4415916A (en) 1983-11-15
FR2459554A1 (fr) 1981-01-09
GB2057758A (en) 1981-04-01
JPS568886A (en) 1981-01-29
DE2924569A1 (de) 1981-01-08

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
8125 Change of the main classification

Ipc: H01L 31/10

8126 Change of the secondary classification

Free format text: H01L 31/18 G01T 1/24

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee
8327 Change in the person/name/address of the patent owner

Owner name: FORSCHUNGSZENTRUM JUELICH GMBH, 5170 JUELICH, DE