DE2916080C2 - Verfahren zum Molekular-Aufdampfen von Halbleiterschichten und Vorrichtung zur Durchführung dieses Verfahrens - Google Patents
Verfahren zum Molekular-Aufdampfen von Halbleiterschichten und Vorrichtung zur Durchführung dieses VerfahrensInfo
- Publication number
- DE2916080C2 DE2916080C2 DE2916080A DE2916080A DE2916080C2 DE 2916080 C2 DE2916080 C2 DE 2916080C2 DE 2916080 A DE2916080 A DE 2916080A DE 2916080 A DE2916080 A DE 2916080A DE 2916080 C2 DE2916080 C2 DE 2916080C2
- Authority
- DE
- Germany
- Prior art keywords
- evaporators
- evaporation
- evaporator
- shaft
- starting material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 42
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 230000008569 process Effects 0.000 title claims description 13
- 238000007740 vapor deposition Methods 0.000 title description 14
- 238000001704 evaporation Methods 0.000 claims description 63
- 230000008020 evaporation Effects 0.000 claims description 61
- 239000007858 starting material Substances 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 230000007723 transport mechanism Effects 0.000 claims description 6
- 238000009835 boiling Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 description 49
- 239000000463 material Substances 0.000 description 24
- 238000009833 condensation Methods 0.000 description 18
- 230000005494 condensation Effects 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 17
- 230000033001 locomotion Effects 0.000 description 10
- 241000273930 Brevoortia tyrannus Species 0.000 description 9
- 230000007704 transition Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000006200 vaporizer Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000011068 loading method Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000010025 steaming Methods 0.000 description 3
- 229910017000 As2Se3 Inorganic materials 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 238000005194 fractionation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002996 emotional effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- XULSCZPZVQIMFM-IPZQJPLYSA-N odevixibat Chemical compound C12=CC(SC)=C(OCC(=O)N[C@@H](C(=O)N[C@@H](CC)C(O)=O)C=3C=CC(O)=CC=3)C=C2S(=O)(=O)NC(CCCC)(CCCC)CN1C1=CC=CC=C1 XULSCZPZVQIMFM-IPZQJPLYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- XPDICGYEJXYUDW-UHFFFAOYSA-N tetraarsenic tetrasulfide Chemical compound S1[As]2S[As]3[As]1S[As]2S3 XPDICGYEJXYUDW-UHFFFAOYSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/04—Pattern deposit, e.g. by using masks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2916080A DE2916080C2 (de) | 1979-04-20 | 1979-04-20 | Verfahren zum Molekular-Aufdampfen von Halbleiterschichten und Vorrichtung zur Durchführung dieses Verfahrens |
| FR7912120A FR2456144A1 (fr) | 1979-04-20 | 1979-05-11 | Procede et dispositif pour la deposition de couches de semi-conducteurs par evaporation sous vide |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2916080A DE2916080C2 (de) | 1979-04-20 | 1979-04-20 | Verfahren zum Molekular-Aufdampfen von Halbleiterschichten und Vorrichtung zur Durchführung dieses Verfahrens |
| FR7912120A FR2456144A1 (fr) | 1979-04-20 | 1979-05-11 | Procede et dispositif pour la deposition de couches de semi-conducteurs par evaporation sous vide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2916080A1 DE2916080A1 (de) | 1980-10-23 |
| DE2916080C2 true DE2916080C2 (de) | 1984-12-06 |
Family
ID=42233664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2916080A Expired DE2916080C2 (de) | 1979-04-20 | 1979-04-20 | Verfahren zum Molekular-Aufdampfen von Halbleiterschichten und Vorrichtung zur Durchführung dieses Verfahrens |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE2916080C2 (ref) |
| FR (1) | FR2456144A1 (ref) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2611746B1 (fr) * | 1987-03-06 | 1989-06-30 | Centre Nat Etd Spatiales | Dispositif d'evaporation sous vide d'un metal en continu |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2423051A (en) * | 1945-09-05 | 1947-06-24 | Ruben Samuel | Selenium depositing machine |
| DE1032998B (de) * | 1954-04-03 | 1958-06-26 | Standard Elektrik Ag | Vorrichtung zur Herstellung von duennen Schichten aus mehreren Komponenten |
| DE1043010B (de) * | 1956-03-12 | 1958-11-06 | Licentia Gmbh | Einrichtung zum Verdampfen fluessiger Substanzen, insbesondere zum Verdampfen von Selen zur Herstellung von Trockengleichrichtern |
| US3077444A (en) * | 1956-06-13 | 1963-02-12 | Siegfried R Hoh | Laminated magnetic materials and methods |
| US3117887A (en) * | 1961-11-13 | 1964-01-14 | Republic Steel Corp | Apparatus and procedure for evaporating metal in vacuum metalizing |
| NL6600179A (ref) * | 1966-01-07 | 1967-07-10 | ||
| FR1584608A (ref) * | 1968-07-30 | 1969-12-26 | ||
| US3563202A (en) * | 1969-06-25 | 1971-02-16 | Pennwalt Corp | Mobile vbaporative firing source |
| GB1354702A (en) * | 1970-02-12 | 1974-06-05 | Baxter Ltd Alexander | Methods of and means for vacuum deposition |
-
1979
- 1979-04-20 DE DE2916080A patent/DE2916080C2/de not_active Expired
- 1979-05-11 FR FR7912120A patent/FR2456144A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2456144B1 (ref) | 1983-08-05 |
| FR2456144A1 (fr) | 1980-12-05 |
| DE2916080A1 (de) | 1980-10-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAM | Search report available | ||
| OC | Search report available | ||
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |